IQE013N04LM6ATMA1 vs IQDH35N03LM5SCATMA1 Perbandingan

Perbandingan bersamaan detil IQE013N04LM6ATMA1 dari Infineon dan IQDH35N03LM5SCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IQE013N04LM6ATMA1 IQDH35N03LM5SCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS N-channel trench MOSFET OptiMOS 5 (trench, shielded-gate)
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (Ta) 31 A —
Continuous Drain Current (Tc) 205 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 107 W —
On-Resistance RDS(on) max [DATA_NEEDED: RDS(on) max value at VGS=10V] —
On-Resistance RDS(on) typ 1.35 mΩ @ VGS=10 V, ID=20 A —
Gate Threshold Voltage (VGS(th)) 2 V (typ) —
Paket PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin)
Rentang Suhu Kerja -55 °C to +175 °C -55 C to +175 C
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Source-Down Topology Yes (flip-chip die attach, drain on top thermal pad) —
Manufacturer — Infineon Technologies
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 30 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at Ta — 66 A
Pulsed Drain Current (IDM) at Tc — 700 A
On-State Resistance (RDS(on)) max — 0.35 mOhm @ VGS=10V
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 278 W
Level MSL — 1 (unlimited)
Marking — IQDH35N03LM5S

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