IR2011STRPBF vs IR2104STRPBF Perbandingan

Perbandingan bersamaan detil IR2011STRPBF dari Infineon dan IR2104STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2011STRPBF IR2104STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration High-Side and Low-Side (Independent) High-side and low-side referenced output channels
Number of Drivers 2 (Half-Bridge) —
Peak Source Current 1 A (typical) —
Peak Sink Current 1 A (typical) —
Gate Drive Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Floating Supply Voltage (VBS) 10 V to 20 V (operational to +200 V) —
Logic Input Compatibility 3.0 V CMOS or LSTTL —
Propagation Delay (typ.) 80 ns —
Turn-On Rise Time (typ.) 35 ns —
Turn-Off Fall Time (typ.) 20 ns —
Offset Voltage Rating 200 V —
Negative Transient Tolerance dV/dt immune —
Suhu Kerja -40 C to +125 C —
Paket 8-SOIC (3.90 mm body width) 8-SOIC (SOIC-8)
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Lead-Free, RoHS Compliant —
Product Type — Half-Bridge Gate Driver IC
Jumlah Output — 2 (high-side + low-side)
Offset Voltage (High-Side, Max) — 600 V
Output Source Current (typ) — 0.21 A
Output Sink Current (typ) — 0.36 A
Rise Time (typ) — 100 ns
Fall Time (typ) — 50 ns
Propagation Delay (typ) — 680 ns
Turn-On Propagation Delay (typ) — 150 ns
Turn-Off Propagation Delay (typ) — 130 ns
Quiescent Current (VCC/VBS, typ) — 150 uA
Input Logic Compatibility — 3.3 V, 5 V, 15 V logic
Shutdown Pin — Yes (active-low shutdown input)
Undervoltage Lockout — Yes (VCC and VBS)
Cross-Conduction Prevention — Yes (matched propagation delay)
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes
Rentang Suhu Kerja — -40 C to +150 C
Status RoHS — Compliant

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