IR2127SPBF vs IR2011SPBF Perbandingan

Perbandingan bersamaan detil IR2127SPBF dari Infineon dan IR2011SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2127SPBF IR2011SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Channel Type Single-channel, High-Side —
Gate Driver Configuration Non-Inverting Input —
Jumlah Output 1 2
Peak Source Current (typ) 0.25 A —
Peak Sink Current (typ) 0.5 A —
Maximum Offset Voltage (High-Side) +600 V —
Negative Transient Tolerance dV/dt immune, negative transient tolerant Yes (on VS pin)
Supply Voltage (VCC) 10 V to 20 V —
Logic Input Compatibility CMOS / LSTTL, 3.3 V to VCC —
Propagation Delay (typ) 150 ns 80 ns
Rise Time (typ, 1 nF load) 80 ns —
Fall Time (typ, 1 nF load) 40 ns —
Protection Features Overcurrent detection with DESAT-style comparator, fault output —
Suhu Kerja -40 °C to +125 °C —
Paket 8-SOIC (SOIC-8) 8-SOIC (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant (Pb-free suffix PBF) —
Product Type — Half-Bridge Gate Driver IC
Configuration — High-Side and Low-Side, Inverting
Offset Voltage (High-Side, max) — 200 V
Gate Drive Supply Voltage (VCC, VBS) — 10 V to 20 V
Output Source/Sink Current — 1 A / 1 A (typ)
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
Input Logic Compatibility — CMOS / LSTTL, down to 3.0 V
dV/dt Immunity — Yes
Rentang Suhu Kerja — -40 C to +125 C
Lead-Free / RoHS — Yes (PBF suffix)
Tube / Reel Packaging — Tube (per Infineon PBF convention)

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