IRFR5305TRLPBF vs IRFR5305TRPBF Perbandingan

Perbandingan bersamaan detil IRFR5305TRLPBF dari Infineon dan IRFR5305TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR5305TRLPBF IRFR5305TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 65 mΩ —
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Power Dissipation (PD) at Tc=25C 110 W —
Suhu Hubung Kerja -55C to +175C —
Paket TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET HEXFET (IR MOSFET)
Avalanche Rated Yes (fully avalanche rated) —
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") —
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
Polarity — P-Channel
Drain-Source Voltage (VDS) Max — -55 V
Continuous Drain Current (ID) at TC=25C — 31 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V — 65 mOhm
Gate-Source Threshold Voltage (VGS(th)) — -2 V to -4 V
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C — 110 W
Single-Pulse Avalanche Energy (EAS) — 270 mJ
Rentang Suhu Kerja — -55 C to +175 C
Level MSL — 1
Status RoHS — Compliant (Pb-free PBF suffix)
Lead-Free Finish — Yes (PBF suffix)

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