ISC016N08NM8ATMA1 vs IQE020N04LM6CGATMA1 Perbandingan
Perbandingan bersamaan detil ISC016N08NM8ATMA1 dari Infineon dan IQE020N04LM6CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC016N08NM8ATMA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | — |
| Pulsed Drain Current (IDM) at Tc | 268 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 263 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Rentang Suhu Kerja | -55 C to +150 C (junction) | -55°C to +150°C |
| Paket | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | OptiMOS 6, TrenchFET-class |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | — |
| Level MSL | 1 (per JEDEC J-STD-020E classification for SuperSO8) | MSL1 (per JEDEC J-STD-020) |
| Series | — | OptiMOS 6 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC=25°C | — | 166 A |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: Qg value] |
| Configuration | — | Single N-Channel, source-down |