ISC028N03LF2SATMA1 vs ISC015N06NM5ATMA1 Perbandingan
Perbandingan bersamaan detil ISC028N03LF2SATMA1 dari Infineon dan ISC015N06NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC028N03LF2SATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 30V | OptiMOS 5 |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 24 A | 33 A |
| Continuous Drain Current (ID) at TC=25C | 128 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | — |
| Power Dissipation at TA | 3 W | — |
| Power Dissipation at TC | 83 W | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Tipe Mounting | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| Status RoHS | — | Compliant |
| MSL (Moisture Sensitivity Level) | — | 1 |