ISC0805NLSATMA1 vs IPZ40N04S53R1ATMA1 Perbandingan

Perbandingan bersamaan detil ISC0805NLSATMA1 dari Infineon dan IPZ40N04S53R1ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPZ40N04S53R1ATMA1 IPZ40N04S53R1ATMA1 - 40V 40A OptiMOS 5 N-MOSFET | Infineon

IPZ40N04S53R1ATMA1 - 40V 40A OptiMOS 5 N-MOSFET | Infineon

IPZ40N04S53R1ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC0805NLSATMA1 IPZ40N04S53R1ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS™ 5 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TA=25°C 13 A —
Continuous Drain Current (ID) at TC=25°C 71 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 74 W —
On-Resistance RDS(on) max at VGS=10V 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] —
On-Resistance RDS(on) max at VGS=4.5V 10.7 mΩ —
Gate Threshold Voltage VGS(th) typ 2.3 V —
Gate Charge Qg typ at VGS=4.5V 16 nC —
Input Capacitance Ciss 2.2 nF —
Reverse Transfer Capacitance Crss 23 pF —
Output Capacitance Coss 360 pF —
Paket PG-TDSON-8-46 (SuperSO8 5x6) PG-TSDSON-8 (5x6 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +150 °C -55 C to +175 C
Status RoHS Compliant —
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D) at Tc=25 C — 40 A
Power Dissipation (P_D) at Tc=25 C — 71 W
R_DS(on) max at V_GS=10 V, I_D=20 A — 3.1 mOhm
Drive Voltage (Max R_DS on, Min R_DS on) — 7 V, 10 V
Maximum V_GS — +/-20 V
Level MSL — MSL1 (260 C peak reflow)
Qualification — AEC-Q101 automotive
Avalanche Tested — 100 %
RoHS Compliance — Compliant (Green Product)
Series — OptiMOS 5 (IPZ family)

Spek dan Sumber

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