ISC110N12NM6ATMA1 vs ISC046N13NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISC110N12NM6ATMA1 dari Infineon dan ISC046N13NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC110N12NM6ATMA1 | ISC046N13NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | 135 V |
| Continuous Drain Current (ID) at Ta | 11 A | — |
| Continuous Drain Current (ID) at Tc | 62 A | — |
| On-Resistance RDS(on) max at VGS=10V | 9.8 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.1 V | — |
| Total Gate Charge (Qg) | 15.4 nC | — |
| Input Capacitance (Ciss) | 1.1 nF | — |
| Output Capacitance (Coss) | 330 pF | — |
| Reverse Transfer Capacitance (Crss) | 10 pF | — |
| Power Dissipation (Pd) at Tc | 94 W | — |
| Power Dissipation (Pd) at Ta | 3 W | — |
| Avalanche Energy (EAS) | 185 mJ | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | SuperSO8 (TDSON-8) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 6 |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 17 A |
| Continuous Drain Current (ID) at TC | — | 142 A |
| Power Dissipation (PD) at TA | — | 3 W |
| Power Dissipation (PD) at TC | — | 211 W |
| Paket / Case | — | PG-TDSON-8 |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Technology | — | OptiMOS 6 trench MOSFET |
| Gate Drive (recommended) | — | 10 V (typical) |
| Packaging | — | Tape & Reel |