MT25QL128ABB1EW7-CAUT vs MT25QL128ABB8E12-CAUT Perbandingan
Perbandingan bersamaan detil MT25QL128ABB1EW7-CAUT dari Micron Technology dan MT25QL128ABB8E12-CAUT dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT25QL128ABB1EW7-CAUT - 128Mb SPI NOR Flash 133MHz | Micron
MT25QL128ABB1EW7-CAUT ✓ AktifMicron Technology
MT25QL128ABB8E12-CAUT - 128Mb SPI Quad I/O NOR Flash | Micron
MT25QL128ABB8E12-CAUT ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MT25QL128ABB1EW7-CAUT | MT25QL128ABB8E12-CAUT |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | FLASH - NOR Memory IC | Flash - NOR Memory IC |
| Density | 128 Mbit (16 MB) | — |
| Antarmuka | SPI - Quad I/O | SPI - Quad I/O |
| Frekuensi Bawah Maximum | 133 MHz | — |
| Tegangan Pemuat | 2.7 V to 3.6 V (3 V class) | 2.7 V to 3.6 V (3V class) |
| Suhu Kerja | -40C to +125C | -40C to +125C (automotive grade, CAUT suffix) |
| Process Technology | 45 nm IT | — |
| Paket | 8-WPDFN (6x5 mm) (MLP8) | 24-T-PBGA (6x8 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| FBGA / Marking Code | RW314 | — |
| Sector Size | 64 KB (with 4 KB subsector erase) | — |
| Read Modes | SPI, Dual I/O, Quad I/O, XIP | — |
| Automotive Qualification | Automotive grade (-CAUT suffix) | — |
| Product Longevity Program | No | No (per datasheet addendum) |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance statement] |
| Programming Voltage | 3 V (single supply, W#/VPP pin) | — |
| Memory Capacity | — | 128 Mbit (16 MB) |
| Max Clock Frequency | — | 133 MHz |
| Access Time | — | 5 ns |
| Memory Organization | — | x1 / x2 / x4 |
| Series | — | MT25Q (successor to N25Q) |
| FBGA Code (family variant) | — | RW314 (MT25QL128ABB1EW7-CAUT per datasheet addendum) |
| Programming/Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |
| Data Retention | — | [DATA_NEEDED: data retention years] |
| Active Read Current | — | [DATA_NEEDED: ICC read current] |
| Standby Current | — | [DATA_NEEDED: ICC standby current] |