MT53E1G32D2FW-046 WT:B vs MT53E2G32D4DE-046 WT:A Perbandingan
Perbandingan bersamaan detil MT53E1G32D2FW-046 WT:B dari Micron Technology dan MT53E2G32D4DE-046 WT:A dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT53E1G32D2FW-046 WT:B - 32Gb LPDDR4 SDRAM | Micron
MT53E1G32D2FW-046 WT:B ✓ AktifMicron Technology
MT53E2G32D4DE-046 WT:A - 64Gb LPDDR4X SDRAM 2G×32 | Micron
MT53E2G32D4DE-046 WT:A ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MT53E1G32D2FW-046 WT:B | MT53E2G32D4DE-046 WT:A |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $98,44 | — |
| Tipe Memori | Volatile, Mobile LPDDR4 SDRAM (LPDRAM) | Mobile LPDDR4X SDRAM (volatile) |
| Memory Capacity | 32 Gbit (4 GB) | — |
| Organisasi | 1G x 32 | 2G × 32 bit |
| Interface / Bus Width | Parallel, 32-bit | — |
| Clock Frequency (max) | 2.133 GHz (2133 MHz) | — |
| Data Rate (per pin) | 4266 MT/s | — |
| Clock Access Time (tCK) | 3.5 ns | — |
| Speed Bin | -046 | — |
| Supply Voltage VDD2 | 1.1 V | — |
| Supply Voltage VDDQ | 1.1 V (LPDDR4X) / 1.8 V (LPDDR4) | — |
| Paket | 200-ball TFBGA (10 mm x 14.5 mm) | 200-ball TFBGA (10 × 14.5 mm) |
| Suhu Kerja | -25C to +85C | -25 °C to +85 °C |
| Tipe Mounting | Surface Mount | Surface Mount |
| Die Configuration | Dual-Die Package (DDP) | — |
| On-Die Features | Auto precharge, Data mask, ZQ calibration, Write leveling, Built-in temperature sensor, Asynchronous reset | — |
| Status RoHS | Compliant | Compliant |
| Density | — | 64 Gbit |
| Speed Grade | — | -046 (2133 MHz tCK) |
| Clock Frequency | — | 2.133 GHz |
| Access Time (tCK) | — | 3.5 ns |
| Laju Data | — | 4266 MT/s (DDR, dual-edge) |
| Supply Voltage (VDD1/VDD2/VDDQ) | — | 1.06 V to 1.17 V (VDDQ 0.6 V typical, HSUL_12) |
| Antarmuka | — | Parallel command/address; HSUL_12 data |
| Ball Pitch | — | 1.0 mm |
| Device Configuration | — | Dual-rank / dual-channel x32 |
| Write Cycle Time (typical) | — | 18 ns |
| Level MSL | — | MSL-3 (per JEDEC J-STD-020) |