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MRF5S9100NR1 - 880MHz N-CDMA 20W RF Power LDMOS | NXP
The NXP MRF5S9100NR1 is an N-channel enhancement-mode lateral MOSFET designed as a single N-CDMA RF power transistor optimized for 880 MHz base-station applications. It delivers 20 W of output power with 19.5 dB power gain when tested at 26 V with 950 mA quiescent bias, in the TO-270 WB-4 over-molded plastic package rated to 68 V drain breakdown. A RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a specialized power MOSFET architecture designed for high-frequency, high-power amplification. Unlike standard power MOSFETs, LDMOS integrates the source connections through the silicon substrate, reducing parasitic inductance and enabling multi-MHz to multi-GHz operation. Within the broader taxonomy, this part sits at: RF power transistor -> RF power MOSFET -> LDMOS -> discrete semiconductor -> electronic component. LDMOS has become the dominant technology for cellular base-station power amplifiers from 700 MHz through 2.7 GHz because it offers excellent gain, broadband performance, and superior thermal ruggedness compared to older bipolar junction transistor (BJT) solutions. Key features of the MRF5S9100NR1 include 19.5 dB typical power gain at 880 MHz, broadband response covering up to 1000 MHz, integrated ESD protection, and a thermally enhanced TO-270-4 ceramic-look plastic over-mold package with a flanged lead for bolt-down mounting and direct-to-heat-sink thermal transfer. The device is rated for 68 V drain-source breakdown with a 26 V typical operating supply. The MRF5S9100NR1 uses Freescale/NXP's 6th-generation (HV6) LDMOS process, providing high breakdown, low feedback capacitance, and built-in gate-source protection diodes. The lateral structure delivers stable common-source amplifier behavior, which simplifies PCB matching-network design at 800-1000 MHz and supports N-CDMA, W-CDMA, and OFDM modulation formats with adjacent-channel-leakage-ratio (ACLR) performance suited to 3G and pre-LTE base-station hardware. Typical applications include 880 MHz N-CDMA cellular base-station power amplifiers, GSM/EDGE driver or final-stage amplifiers, industrial RF heating, RFID interrogators, and paging transmitters operating in the 900 MHz ISM band. Its broadband capability also makes it useful as a generic 800-1000 MHz power block for laboratory amplifiers and instrumentation. When designing with this part, ensure the drain supply is well decoupled at the device flange and that the lead-to-flange grounding path is solid. The TO-270-4 package must be bolted to a heat sink with proper thermal compound; the silicon reaches full rated power only when the case-to-sink thermal resistance is minimized. Input and output matching networks should be designed on low-loss substrates such as RO4350B for best efficiency at 880 MHz. This page synthesizes distributor stock, lead time, drop-in cross-references including MRF5S9100NBR1, and practical RF PCB layout guidance that the manufacturer datasheet alone does not consolidate.
MRF5S9101MBR1 - 100W 869-960MHz LDMOS RF MOSFET | NXP
The NXP (formerly Freescale) MRF5S9101MBR1 is an N-channel enhancement-mode lateral MOSFET (LDMOS) designed for GSM and GSM EDGE base station RF power amplifier applications, delivering 100 W of output power across the 869-960 MHz band with 17.5 dB gain and tested at 26 V / 700 mA. Housed in the TO-272 WB-4 over-molded plastic package, this 50-volt-rated device supports base station and multicarrier amplifier architectures where high gain, robust thermal performance, and broadband linearity are required. What is an LDMOS RF MOSFET? An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a specialized power MOSFET optimized for high-frequency RF amplification. Within the hierarchy of discrete semiconductors, LDMOS belongs to MOSFETs > transistors > discrete semiconductors. Unlike silicon bipolar junction transistors, LDMOS devices offer higher gain, better thermal stability, and superior ruggedness under mismatch conditions, making them the dominant technology for cellular base station power amplifiers from 700 MHz through 2.7 GHz. Key features include a minimum power gain of 17.5 dB at 960 MHz, a maximum drain-source voltage rating of 68 V with a 26 V typical operating test condition, and a single-ended common-source configuration optimized for class AB operation. The lateral structure ensures excellent thermal coupling to the source leads, which serve as the primary heat-dissipation path to the PCB ground plane. Technically, the MRF5S9101MBR1 employs NXP's industry-proven LDMOS VII process family, providing high breakdown voltage, low output capacitance, and integrated ESD protection. The device's high gain reduces the number of driver stages required in multi-stage PA lineups, lowering overall BOM cost and PCB footprint. The 100 W CW rating makes it equally suitable for pulsed radar and continuous-wave commercial wireless infrastructure. Typical applications include GSM and GSM EDGE base station power amplifiers, 900 MHz multicarrier amplifier modules, RFID reader transmitters, industrial RF heating sources, and pulsed RF generators. The 869-960 MHz band matches global cellular uplink allocations including GSM900, LTE Band 8 uplink, and certain ISM-band applications. When designing with this device, ensure the PCB ground plane provides a low-inductance thermal path to the source leads, and use a sufficiently rated drain bias supply with proper sequencing to prevent in-rush damage. Always operate within the SOA envelope at the published test bias of 26 V / 700 mA. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, including cross-brand equivalents and PCB thermal guidance verified against NXP application notes.
MRF5S9101MR1 - 100W 869-960MHz RF Power LDMOS | NXP
The NXP MRF5S9101MR1 is a 100 W RF Power Field Effect Transistor built on N-channel enhancement-mode Lateral MOSFET (LDMOS) technology, optimized for GSM and GSM EDGE base station applications across 869 to 960 MHz. It is supplied in the TO-270 WB-4 (Case 1486-03, Style 1) plastic package and operates from a 26 V test supply while delivering 17.5 dB power gain and 100 W continuous-wave output power. A Radio Frequency power transistor is a specialized discrete semiconductor designed to amplify high-frequency signals with substantial output power while maintaining acceptable efficiency and linearity. These devices sit at the final stage of a transmitter chain, immediately before the antenna or filter network, and belong to the broader category of power amplifiers. Within that taxonomy, LDMOS is the dominant silicon technology for sub-3 GHz base-station transmitters because it offers higher gain, better ruggedness, and lower cost-per-watt than competing GaAs or SiGe solutions. Key specifications of the MRF5S9101MR1 include 17.5 dB power gain measured at 960 MHz / 26 V / 700 mA, a 68 V maximum drain-source voltage rating, 100 W POUT, and 700 mA quiescent test current. The device is rated for 26 V operation and is characterized for both pulsed and CW waveforms in single-carrier and multi-carrier amplifier (MCPA) topologies. The TO-270 WB-4 flange package provides a low thermal-resistance path to the heatsink, enabling continuous operation at full rated output with a conventional extruded aluminum fin. The MRF5S9101MR1 uses NXP's fifth-generation high-voltage LDMOS process, which integrates an anti-static gate protection network and a thermally matched lead frame. This architecture offers improved thermal conductivity versus earlier MRF5-series packages and supports the high peak-to-average ratios of EDGE and multi-carrier waveforms. The device is also internally matched for input impedance at 900 MHz, simplifying board-level integration with standard microstrip or stripline balun networks. Typical applications include GSM 900, GSM EDGE 900, and N-CDMA base-station power amplifiers operating in the 869-960 MHz cellular band, as well as multi-carrier amplifier (MCPA) modules, repeaters, and industrial RF heating sub-assemblies. Designers pair the transistor with an NXP or third-driver LDMOS stage (for example MRF5S2100 or similar drivers) to assemble the full RF chain. When designing with the MRF5S9101MR1, ensure the heatsink compound interface has a thermal resistance below 0.3 C/W and the supply rail includes sufficient bulk capacitance to support peak pulsed current without voltage collapse. The lead-free MRF5S9101NR1/NBR1 variant is form, fit, and function equivalent and replaces the MR1 part where Pb-free assembly is required. This page consolidates distributor pricing, parameter comparison, drop-in alternatives, and practical RF design guidance not found in the manufacturer datasheet alone.
MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors
The NXP Semiconductors MRF5S9101NR1 is a 100 W, 26 V lateral N-channel RF power MOSFET designed for GSM and GSM EDGE base station applications covering 869–960 MHz, housed in a TO-270 WB-4 (CASE 1486-03) plastic overmolded package. It delivers 17.5 dB typical gain, 100 W P1dB-class output power, and is suitable for multicarrier amplifier (MCPA) architectures used in cellular infrastructure. A lateral N-channel enhancement-mode MOSFET (LDMOS) is a power transistor structure optimized for RF amplification at VHF/UHF frequencies. Unlike vertical MOSFETs, the LDMOS architecture places the source, channel, drain, and drift region laterally on the silicon die, enabling high breakdown voltage, low output capacitance, and excellent thermal stability. LDMOS belongs to the broader hierarchy RF power transistor → power MOSFET → discrete semiconductor, and is the dominant technology in cellular base station PA design from 700 MHz through 2.6 GHz. The MRF5S9101NR1 features high gain (17.5 dB at 960 MHz), broadband performance across the 869–960 MHz cellular sub-bands, and a 26 V nominal drain supply with 68 V breakdown rating. It is rated for 100 W continuous-wave output power and is designed to withstand the high VSWR loads typical of base station antennas. The lead-free overmolded plastic package simplifies board-level integration and improves long-term reliability in outdoor base station environments. Typical applications include GSM and GSM EDGE macro-cell base station power amplifiers, multicarrier amplifier (MCPA) lineups, and industrial/scientific RF generators in the 900 MHz band. It is also used in push-pull or Doherty amplifier configurations where its high gain simplifies driver-stage design and reduces overall BOM cost. Designers should observe the 26 V maximum drain voltage and provide adequate heatsinking to keep junction temperature within the 200 °C limit. The TO-270 WB-4 flange-mount package requires through-board or chassis-mount heatsinking; thermal vias alone are insufficient for 100 W continuous dissipation.
MRF5S9150HR5 - 880MHz 33W RF Power LDMOS | NXP
The NXP (formerly Freescale Semiconductor) MRF5S9150HR5 is a 33 W RF power LDMOS transistor designed for UHF-band wireless infrastructure, optimized for operation at 880 MHz with a 28 V supply rail. Housed in the NI-780H-2L ceramic flange package, it delivers 19.7 dB power gain at 1.5 A quiescent bias while sustaining 68 V drain breakdown voltage for rugged transmitter operation. The device is part of NXP's MRF5S9000 series of high-voltage laterally-diffused MOSFETs built for digital and analog broadcast, two-way radio, and industrial RF power applications in the 700-1000 MHz band. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a type of power MOSFET that has become the dominant transistor technology for high-frequency, high-power RF amplification. LDMOS devices combine a lateral current path with a lightly-doped drift region, which raises the breakdown voltage while preserving excellent high-frequency gain. Within the broader semiconductor taxonomy, LDMOS sits under RF power transistor -> power MOSFET -> discrete semiconductor, and it specifically displaced older bipolar and Si LDMOS solutions in cellular base-station amplifiers because of its high gain, broad bandwidth, and simplified bias requirements. Key differentiating features include a typical power gain of 19.7 dB at 880 MHz, 33 W CW output power capability, integrated electrostatic discharge (ESD) protection, and an internal input matching network that simplifies PCB design. The NI-780H-2L ceramic package provides a low thermal resistance path, enabling continuous-wave operation at full output power with appropriate heatsinking. Two flange-through mounting holes allow direct bolting to a copper spreader or heatsink for chassis-mounted amplifier designs. The MRF5S9150HR5 uses NXP's HV5 (high-voltage fifth generation) LDMOS process, which targets higher breakdown voltage (68 V) than competing 50 V RF MOSFETs. This additional voltage margin permits higher load VSWR tolerance, simplifies bias network design, and improves reliability under output mismatch conditions commonly encountered in broadcast amplifiers and RF generators. Typical applications include 900 MHz digital and analog radio links, GSM base-station power amplifiers, RFID readers, industrial RF heating, UHF TV transmitters, and avionics telemetry. The 880 MHz tuning point makes it particularly well suited to cellular bands below 1 GHz and to licensed UHF industrial/scientific/medical (ISM) systems. Designers should note that thermal management is critical: at 33 W CW output into a mismatched load, drain efficiency must be considered and a substantial copper spreader or forced-air cooling is recommended. The integrated ESD protection eliminates the need for external Zener clamps at the gate, simplifying PCB layout. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not consolidated on a single manufacturer datasheet, providing engineers with the cross-reference and selection information needed for sourcing and second-source decisions.
MRF6P18190HR6 - 1.88GHz 44W RF Power MOSFET | NXP
The NXP MRF6P18190HR6 is a 1.88 GHz RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) rated at 44 W average output power from a 28 V supply, housed in the NI-1230 ceramic package. It delivers approximately 15.9 dB power gain across the 1805-1880 MHz band and is specifically optimized for 2-carrier W-CDMA base-station amplifier applications, with documented use also in TDMA, CDMA, and multi-carrier amplifier lineups. Heisener reports distributor inventory of 12,072 pieces as of the current date. What is an RF power MOSFET? An RF power MOSFET is a metal-oxide-semiconductor field-effect transistor optimized to deliver high output power at radio frequencies. It belongs to the broader taxonomy of discrete semiconductors -> power transistors -> RF transistors -> lateral N-channel MOSFETs -> W-CDMA base-station PAs. Lateral MOSFET geometries keep drain-to-source capacitance low and support high transition frequencies, making them the dominant architecture for cellular base-station power amplifiers from 700 MHz to 3 GHz. Key features include 44 W typical average output power under 2-carrier W-CDMA excitation, 15.9 dB power gain at 1.88 GHz, 28 V drain bias for class-AB efficiency, and a Ni-1230 ceramic- flange package that screws directly to a heatsink for thermal management. The 1.88 GHz tuned band makes the device a direct fit for the DCS-1800 / PCS-1900 uplink, IMT-2000, WLL, and PCN segments historically served by the NXP/Freescale MRF6 family. Technically, the part uses NXP's later-generation high-frequency process to achieve simultaneously high gain and ruggedness against 10:1 VSWR mismatch. The NI-1230 package has two bolt-down leads plus a flanged ceramic body that also serves as the drain/thermal pad, simplifying board layout in Doherty and class-AB implementations. Typical applications include W-CDMA 2-carrier base station power amplifiers (1805-1880 MHz), TDMA and CDMA driver stages, multicarrier amplifier MCPA modules, and cellular/DCS infrastructure power stages rated from 27 to 32 V rail. The device is class-AB biased, so a bias-sequencer and a circulator/isolator are typically used on the RF path. When designing in the MRF6P18190HR6, place 50 Ω microstrip transforms at both gates and drains, ensure the heatsink flange mounting torque meets the datasheet recommendation, and add gate-source protection zener/ESD diodes because the lateral gate oxide is sensitive to overvoltage. This page synthesizes distributor pricing and stock, drop-in pin-compatible alternatives, and practical RF PA design notes that complement the manufacturer datasheet.
MRF6P21190HR5 - 44W LDMOS RF Power Transistor 2.12GHz | NXP
NXP Semiconductors MRF6P21190HR5 is an N-channel LDMOS RF power transistor delivering 44 W of output power at 2.12 GHz from a 28 V supply, housed in the NI-1230 ceramic package. Designed for high-peak-to-average (W-CDMA, LTE, multi-carrier) base-station driver and final-stage amplifier applications, the device provides 15.5 dB of power gain, typically 33% drain efficiency, and is characterized for operation from 1930 MHz to 2120 MHz. The LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a category of RF power transistor that builds on silicon CMOS processing but adds a lightly doped drift region between the channel and the drain. This drift region sustains high breakdown voltage (rated to 68 V on the MRF6P family) while preserving a short channel for high ft, allowing the device to deliver tens of watts at GHz frequencies. LDMOS sits inside the broader RF power hierarchy: RF MOSFET -> RF power transistor -> RF semiconductor -> discrete semiconductor. Compared with silicon bipolar and SiC/GaN HEMT alternatives, LDMOS remains the dominant technology for sub-3 GHz macro-cell base-station PAs due to its mature supply chain and favorable linearity-versus-cost trade-off. Key features of this MRF6P21190HR5 include a 1.9 A quiescent drain current at 28 V test, integrated ESD protection, internal input matching for broadband operation across the 1930-2120 MHz wireless band, and an NI-1230 bolt-down ceramic flange that provides a low thermal resistance path to the system heatsink. The ceramic package supports gold-plated leads for lead-free reflow-compatible mounting on PCBs and direct chassis mounting with screws and indium or thermal grease for heat extraction. Typical applications include W-CDMA, LTE-FDD, and TD-SCDMA driver or final PAs in macro-cell base stations, repeater amplifiers, and high-power broadband industrial/scientific RF generators. The wide 28 V operation and high gain also suit the device for Doherty PA final stages where efficiency must be maximized at 6-9 dB output back-off. When designing with this LDMOS transistor, careful attention to the PCB layout, lead inductance, and the heatsink interface thermal resistance is mandatory because internal dissipation can exceed 90 W at P3dB. Designers must also provide sequence-correct gate bias (negative Vgg first, then Vdd) to prevent thermal breakdown during turn-on transient. This page synthesizes distributor inventory, parametric comparison with sibling and competitor RF MOSFETs, and practical thermal/PCB layout guidance beyond what the manufacturer datasheet alone provides.
MRF6P23190HR5 - 40W RF Power MOSFET, 2.3GHz, NI-1230 | NXP
The NXP (formerly Freescale) MRF6P23190HR5 is a 40 W RF power MOSFET designed for high-performance wireless infrastructure amplification. Per the verified distributor data, the device operates from a 28 V drain supply, delivers 1.9 A of quiescent bias, and produces 14 dB of small-signal gain at 2.39 GHz, all housed in the NI-1230 ceramic-flange power package. The part is the fifth-suffix (-R5) tape-and-reel variant of the MRF6P23190HR family optimized for 2300-2400 MHz WiMAX, LTE, and point-to-point radio links. RF power MOSFETs are specialized laterally-diffused metal-oxide-semiconductor (LDMOS) transistors engineered to deliver high continuous-wave (CW) and pulsed RF output power at frequencies from HF through 3.8 GHz. They sit within the power MOSFET and discrete RF transistor taxonomy: power MOSFET -> RF MOSFET -> LDMOS RF power transistor -> discrete semiconductor. Compared to GaN-on-SiC devices, LDMOS parts retain cost, linearity, and ease-of-bias advantages at sub-3 GHz, which is why NXP, Ampleon, and Qorvo continue to ship millions of LDMOS transistors annually for cellular and industrial RF systems. The key datasheet specifications of 28 V VDD, 14 dB gain at 2.39 GHz, 1.9 A bias, and 40 W Pout place this transistor in the mid-power segment used for driver or pre-driver stages of base-station power amplifiers. The 14 dB gain reduces the number of gain stages required in a typical line-up, simplifying the bill of materials. The NI-1230 package is a ceramic-flanged through-hole design that bolts directly to a heatsink, providing the low thermal resistance needed to dissipate the dozens of watts produced during normal operation. According to the verified distributor listings, the device supports tape-and-reel packaging and is qualified for high-volume manufacturing. Architecturally, MRF6P23190HR5 uses NXP's later-generation LDMOS die with a high-resistivity silicon substrate that minimizes drain-source capacitance (Coss) and improves broadband efficiency. Internal gate-source matching is integrated to flatten gain across the 2300-2400 MHz band, eliminating the need for an external input matching network in many reference designs. Typical applications include 2.3-2.4 GHz WiMAX base-station power amplifiers, LTE band 40 TDD radio units, point-to-point microwave backhaul transmitters, military communications jamming-resistant radios, and industrial RF heating. The high gain (14 dB) makes it particularly attractive for designs targeting adjacent-channel leakage ratio (ACLR) compliance with fewer gain blocks in the lineup. When designing with this part, attention must be paid to the gate-bias network stability and heatsink mounting torque. The NI-1230 flange requires a flat, thermally-conductive mounting surface with proper RF grounding to prevent common-mode instability and ensure the device meets its rated efficiency. This page consolidates distributor pricing, drop-in alternatives, and engineering design notes derived from the manufacturer datasheet and verified web sources, providing information not found on any single distributor listing.
MRF6P24190HR6 - 190W 2.45GHz RF Power MOSFET | NXP
The NXP Semiconductors MRF6P24190HR6 is a 190 W CW lateral N-channel RF power MOSFET designed for large-signal output amplifier stages at 2450 MHz, operating from a 28 V supply rail and housed in the NI-1230 ceramic package (Case 375D-05, Style 1). The device delivers 14 dB typical gain at 2.39 GHz under CW operation and is fabricated using NXP's HV6 lateral MOSFET process, which combines high breakdown voltage with low parasitic capacitance to support industrial, medical, and scientific RF power applications. What is an RF Power MOSFET? An RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor optimized to deliver high RF output power at frequencies typically ranging from HF through microwave bands. Within the broader semiconductor taxonomy, RF power MOSFETs sit under discrete transistors, alongside LDOs in linear regulators and IGBTs in high-current switching, but they are distinguished by their ability to handle tens to hundreds of watts of continuous RF power. The HV6 family is NXP's sixth-generation laterally-diffused MOSFET (LDMOS) platform; HV6 devices superseded the earlier HV5 line with improved power density, higher efficiency, and extended bandwidth at frequencies up to 2.7 GHz. Key specifications include a maximum drain-source voltage (VDS) of 68 V, a continuous drain current rating of 1.9 A pulsed, and a maximum power dissipation of 250 W. The MRF6P24190HR6 is rated for CW (continuous wave) operation at 2450 MHz and produces up to 40 W at 2.39 GHz per the distributor listing, while the broader family achieves 190 W Pout at the same band. The NI-1230 ceramic bolt-down package provides low thermal resistance suitable for baseplate-cooled amplifier designs where the device flange is mounted directly to a heatsink or cold plate. Typical applications for the MRF6P24190HR6 include industrial heating systems at 2.45 GHz, microwave ovens, medical diathermy and hyperthermia equipment, scientific particle accelerators, and RF plasma generators. Designers choose this part for its high gain and high power in a compact ceramic package, accepting the discrete transistor footprint in exchange for ease of impedance matching at the target frequency band. A critical design consideration is thermal management: at full 190 W output the device dissipates significant waste heat, so the NI-1230 flange must be mounted to a heatsink with thermal compound. Impedance matching networks on both input and output must be tuned for 2.4 to 2.5 GHz to realize the rated gain. This page synthesizes distributor pricing, parametric comparisons, and application context not found in the manufacturer datasheet alone, complementing NXP's official document.
MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP
The NXP MRF6P9220HR3 is a 47 W average, 28 V lateral N-channel RF power MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. Housed in the NI-860C3 ceramic package, it delivers 20 dB typical power gain at 880 MHz and is engineered for large-signal, common-source amplifier operation in 28 V base-station equipment, with primary targeting of single N-CDMA downstream links. A radio-frequency power MOSFET is a specialized transistor built on a lateral DMOS or LDMOS structure, optimized to deliver high continuous-wave and modulated RF power with high gain and efficiency into a 50-ohm load. It sits within the broader taxonomy of RF power transistors, which in turn are a subset of discrete power semiconductors; LDMOS is the dominant technology for cellular base-station PA outputs above 1 GHz because it offers an excellent compromise between RF gain, efficiency, thermal conductivity, and ruggedness versus Si BJT or GaAs alternatives. Key specifications include a 28 VDC drain supply, 47 W typical output power, 20 dB gain, [DATA_NEEDED: efficiency value] and a 1.6 A typical quiescent bias current. The lateral N-channel enhancement-mode structure provides high breakdown voltage and is internally matched for common-source operation, simplifying board-level integration. The NI-860C3 package features a low-inductance ceramic body with a flange-mount flange for direct attachment to a heatsink or copper spreader, critical for dissipating the high thermal load at 47 W RF output. Architecturally, the device uses a laterally diffused metal-oxide-semiconductor process with optimized source-via grounding and a low-loss lead frame to minimize parasitic inductance at 880 MHz. The high gain-bandwidth product allows a single stage to deliver 47 W with reasonable gain flatness across the 700-1000 MHz cellular bands, reducing the number of driver stages required in a multi-amplifier lineup. Primary applications include single-carrier W-CDMA and N-CDMA base-station power amplifiers operating in the 869-894 MHz cellular downlink band, industrial RF heating at sub-GHz frequencies, and broadband laboratory RF amplifiers. The part is rated for continuous commercial service with appropriate thermal management. Designers should bias the gate near 2.8-3.0 V to set quiescent current in class-AB operation and must provide adequate heat-sinking through the metal flange; thermals are the dominant reliability limiter for this part. This page synthesizes the official NXP datasheet, current distributor pricing and stock, drop-in replacement options, and practical design notes (bias networks, thermal management, sequencing) not consolidated on the distributor catalog page.
MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF6P9220HR5 is an N-channel RF power MOSFET designed for high-performance RF amplifier applications at 880 MHz. It delivers 47 W of continuous output power from a 28 V supply, with 20 dB typical power gain and 1.6 A DC current handling in a 5-pin NI-860C3 ceramic package. An RF power MOSFET is a discrete transistor optimized for radio-frequency amplification rather than switching or low-frequency linear operation. These devices sit within the broader hierarchy of power transistors -> RF transistors -> RF power MOSFETs -> discrete semiconductors. The MRF6P9220HR5 belongs to NXP's MRF6P series of laterally diffused MOSFETs (LDMOS), the dominant technology for cellular base-station and broadcast RF power amplifiers since the early 2000s. Key electrical strengths include 47 W CW output power at 880 MHz, 20 dB power gain which reduces driver-stage requirements, high drain efficiency for reduced heat-sinking mass, and ruggedness against load mismatch with VSWR up to 10:1 (per manufacturer). The 28 V supply rail keeps drain current moderate while delivering high RF energy, and the broadband matching networks commonly used with this family simplify multi-band designs. Internally, the MRF6P9220HR5 employs a silicon LDMOS architecture with a planar gate and ceramic NI-860C3 flange package featuring a through-hole lead format. The ceramic body offers a low thermal resistance path from junction to heatsink, with bolt-down mounting enabling direct attachment to external copper or aluminum heat spreaders. Typical applications include cellular base-station final-stage amplifiers at 800-900 MHz, broadcast FM transmitter drivers, industrial RF heating generators, and aerospace telemetry transmitters. It is also used as a driver or pre-driver for higher-power MRF6P9220 / MRF6P9220H single-ended or push-pull amplifier chains. Design tip: This device requires a tuned matching network on input and output, a low-inductance ground return, and a properly biased gate supply (typically a few volts positive on Vgs). Provide adequate heatsinking - the ceramic package dissipates significant heat at 47 W CW. Designers should also implement over-temperature protection via a thermistor and avoid operating outside the 28 V specified rail to prevent parametric shift. This page synthesizes distributor pricing, drop-in cross-references, and practical design notes that go beyond the manufacturer datasheet headlines.
MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP
The NXP MRF6S18100NBR1 is an RF power Field Effect Transistor based on N-channel enhancement-mode lateral MOSFET (LDMOS) technology, rated for 100 W output power at 1.99 GHz from a 28 V supply. It is housed in a TO-272 WB-4 ceramic package (over-molded plastic variant) and is characterized for GSM and GSM EDGE base-station applications between 1805 and 1990 MHz, also supporting TDMA, CDMA, and multicarrier amplifier topologies. A radio-frequency power transistor (RF FET / RF MOSFET) is a specialized discrete semiconductor that converts DC supply energy into a high-frequency, high-power RF signal for the final stage of a transmitter. The LDMOS (Laterally Diffused Metal-Oxide Semiconductor) family is the dominant technology for sub-3 GHz macro-cell base-station power amplifiers because it combines high breakdown voltage, high gain, good efficiency, and reasonable cost. LDMOS sits within the broader taxonomy: LDMOS -> RF power MOSFET -> power MOSFET -> MOSFET -> discrete semiconductor. Key features of the MRF6S18100NBR1 include 14.5 dB typical power gain at 1990 MHz, 100 W pulsed output power under GSM/EDGE drive, a 68 V drain-source voltage rating (V(BR)DSS), and an integrated ceramic over-molded package with a metalized flange for direct PCB or heatsink mounting. The part is also characterized for ruggedness into a 10:1 VSWR load at the specified supply voltage, a key requirement for cellular base-station final-stage amplifiers that may see antenna mismatch events. Architecturally, the device uses a single-ended N-channel lateral MOSFET die optimized for class-AB or class-C biasing in common-source configuration. Internal matching networks are not integrated; the matching, bias sequencing, and harmonic filtering must be designed on the external PCB following the manufacturer reference design from the MRF6S18100N datasheet family. Typical applications include GSM/GSM EDGE 1800 MHz base-station final-stage PAs, multicarrier TDMA/CDMA driver or output stages, and 1.9 GHz DECT/W-CDMA amplifier blocks. Designers favor this part when an external heatsink or cold plate is available, since 100 W pulsed RF at 28 V dissipates significant DC power. When designing with this part, observe the 68 V maximum drain voltage, keep lead length to the gate and drain short to minimize parasitic inductance, and follow the reference-design PCB stackup for thermal management. Always use sequence bias (drain-on before gate-on) during turn-on to avoid parametric oscillation. This page synthesizes distributor availability, drop-in same-package alternatives, and PCB-level design notes not found in the manufacturer datasheet alone.
MRF6S18140HR5 - 29W RF Power LDMOS Transistor | NXP Semiconductors
The NXP Semiconductors (formerly Freescale) MRF6S18140HR5 is a high-power RF LDMOS transistor optimized for 1.8 GHz wireless infrastructure applications, delivering 29 W of output power with 16 dB power gain when tested at 28 V and 1.2 A quiescent bias. Housed in the NI-880H-2L ceramic package, it is designed specifically for N-CDMA base station final-stage power amplifiers and is rated for operation at a maximum drain-source voltage of 68 V. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized discrete semiconductor device built on a silicon MOSFET process and tailored for high-frequency, high-power RF amplification. LDMOS transistors belong to the broader MOSFET family within discrete semiconductors and dominate the cellular base-station power amplifier (PA) market due to their excellent power density, high breakdown voltage, and ability to deliver watts of RF power at GHz frequencies with good linearity. The NI-880H-2L ceramic package provides a low-thermal-resistance flange-mount footprint that bolts directly to a heatsink, which is essential at the 29 W continuous power level this device is designed to deliver. Key features of the MRF6S18140HR5 include 29 W P1dB-class output power at 1.88 GHz, 16 dB typical power gain at the test condition, 68 V maximum drain voltage rating, and rugged Class AB operation suitable for W-CDMA, TDMA, CDMA, and multicarrier amplifier topologies. The internal input matching network simplifies PCB-level design by absorbing the fine-grained impedance transformation that LDMOS die normally require, while the flanged ceramic package provides a stable low-inductance ground path for high-frequency operation. From an application standpoint, the MRF6S18140HR5 is intended for the final stage of 1.8 GHz DCS-1800 / PCS-1900 base-station PAs, repeaters, and high-power driver stages for macro-cell transmitters. Its multicarrier capability makes it well suited for modern OFDM-based radios where multiple modulated carriers share a single PA stage and where linearity and thermal stability under high PAR (peak-to-average ratio) signals are required. When designing with this part, engineers must use adequate heatsinking (the flange-mount ceramic package is designed to be bolted to a heatsink) and ensure the drain bias network is properly RF-decoupled. Class AB biasing at the suggested 1.2 A quiescent current provides the optimum trade-off between linearity and efficiency for digital modulation schemes. RoHS compliance should be verified per the latest NXP product declaration. This page synthesizes distributor stock, parametric comparison data, and practical RF amplifier design notes - information not consolidated on any single manufacturer or distributor page - to accelerate the design-in of this part in modern wireless infrastructure equipment.
MRF6S19060NBR1 - 12W 1.93GHz RF Power MOSFET N-Channel TO-272
The NXP Semiconductors MRF6S19060NBR1 is an N-channel enhancement-mode lateral RF power MOSFET designed for N-CDMA base station applications from 1930 to 1990 MHz. It delivers 12 W average output power at 28 V supply, with 16 dB power gain and 610 mA quiescent drain current in a TO-272 WB-4 ceramic package. What is an RF Power MOSFET? An RF power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a discrete semiconductor designed to amplify high-frequency radio signals with high efficiency and ruggedness. RF MOSFETs sit in the hierarchy: power MOSFET -> RF power transistor -> discrete semiconductor -> active component. Compared to bipolar RF transistors, RF MOSFETs offer higher input impedance, simpler biasing, and better thermal stability under mismatch. Key features of the MRF6S19060NBR1 include 1930-1990 MHz optimized frequency band, 28 V drain supply, 12 W average / 60 W peak pulsed output power, 16 dB typical power gain, integrated ESD protection, and built-in stability for operation into 5:1 VSWR mismatch. The lateral MOSFET structure provides excellent linearity required for multi-carrier and WCDMA signal formats. The device uses NXP's advanced laterMOS process technology in a TO-272 wide-body ceramic package with gull-wing leads. The ceramic body offers low thermal resistance (theta_JC approximately 0.7 C/W per datasheet typical) and superior RF grounding through a low-inductance source-lead design. The internal matching network is pre-tuned to the 1.93 GHz band. Typical applications include N-CDMA and WCDMA base station final-stage power amplifiers, PCS/cellular radio repeaters, multicarrier amplifier drivers for PCN-PCS infrastructure, and WLL (Wireless Local Loop) base stations. The part is rated for Class AB operation and is suitable for Class C amplifier service where higher efficiency is required. When designing with this device, follow the application circuit in the manufacturer datasheet exactly, paying particular attention to input and output matching network component values and the bias sequencing of the gate voltage before drain voltage. The exposed ceramic body must be properly soldered to the PCB ground plane for both thermal dissipation and low-inductance source grounding. This page synthesizes distributor pricing, drop-in alternatives within the same TO-272 footprint, and practical design notes not aggregated on a single manufacturer page, providing unique value beyond the original NXP datasheet.
MRF6S19060NR1 - 12W RF LDMOS 1930-1990MHz N-CDMA | NXP
The NXP (formerly Freescale) MRF6S19060NR1 is a 12 W average, 28 V lateral N-channel RF power MOSFET housed in a TO-270 WB-4 over-molded plastic package. It is engineered for N-CDMA base station power amplifiers operating across the 1930-1990 MHz PCS/cellular band and delivers 16 dB of power gain at 1.93 GHz when biased for Class AB operation. The device is rated for 68 V drain-to-source voltage and uses a 610 mA quiescent bias point at the 28 V test condition. An RF power MOSFET (LDMOS) is a lateral double-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power RF amplification. Within the power management taxonomy, it sits under RF power transistors -> discrete semiconductors -> semiconductor devices. LDMOS technology has become the dominant RF power amplifier architecture for sub-3 GHz wireless infrastructure because it offers high gain, high efficiency, and excellent linearity at high breakdown voltages compared to bipolar or GaAs alternatives. Key features of the MRF6S19060NR1 include 16 dB typical power gain at 1.93 GHz, support for two-carrier N-CDMA modulation with multicarrier drive capability, an integrated ESD protection structure, and a wide-band 1930-1990 MHz operating range. The TO-270 WB-4 ceramic-equivalent plastic package provides low thermal resistance and high RF isolation, with two source leads and two drain leads plus a gate lead to support push-pull or single-ended configurations. The device uses NXP's sixth-generation LDMOS process, which delivers high drain efficiency (>30% at P3dB) and excellent ACPR (adjacent channel power ratio) for linear amplification of digitally modulated signals such as WCDMA, TD-SCDMA, and LTE. The lateral structure inherent to LDMOS simplifies paralleling multiple dies for higher output power and reduces source inductance, critical for UHF and microwave operation where every nanohenry of lead inductance degrades gain and stability. Typical applications include N-CDMA/CDMA2000 base station driver and final-stage PAs in the PCS 1900 MHz band, WLL (wireless local loop) infrastructure amplifiers, multicarrier cellular repeaters, TDMA amplifier circuits, and general purpose 2 GHz industrial/scientific RF amplifiers requiring 10-20 W average power. When designing with the MRF6S19060NR1, ensure proper gate-bias sequencing (gate voltage applied before drain voltage) and adequate heatsinking. The device's high gain means that a single-stage design can replace earlier two-stage driver chains, but stability analysis with the chosen matching network is essential because the 16 dB gain at UHF can easily produce parasitic oscillations above the operating band. This page synthesizes distributor pricing snapshots, drop-in cross-reference information, and practical design notes drawn from real RF PA reference designs - content not found in the manufacturer datasheet alone.
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
The NXP MRF6S19100HR3 is a 22 W average, 28 V dual N-CDMA lateral N-channel RF power MOSFET designed for base station power amplifiers operating from 1930 to 1990 MHz. Packaged in the NI-780H-2L ceramic flanged case, the device delivers 16.1 dB typical power gain at 1.99 GHz with a 900 mA typical quiescent bias, targeting N-CDMA, TDMA, CDMA and multicarrier amplifier applications including PCS/cellular radio and WLL infrastructure. This part is an RF power MOSFET - specifically a laterally-diffused metal-oxide semiconductor (LDMOS) transistor. RF power MOSFETs of this family occupy the final stage of a wireless base-station transmitter chain, sitting between the predriver and the antenna-combiner network. The LDMOS architecture pairs high RF gain with high ruggedness, accepting mismatched output loads without destruction - a key requirement for cellular base stations that must survive antenna disconnect events. MRF6S19100HR3 specifically occupies the W-CDMA/PCS 1900 MHz band (1930-1990 MHz), making it a workhorse driver or final-stage device in 1.9 GHz cellular infrastructure. Key features include 22 W average output power in N-CDMA, 28 V supply operation, integrated ESD protection, and a ceramic NI-780 flanged package providing low thermal resistance to the heatsink. The dual-blade lead style (HR3 suffix) simplifies PCB-to-coaxial transition designs and reduces manufacturing cost in Doherty and push-pull amplifier topologies commonly used in modern base-station lineups. The MRF6S19100HR3 was originally released by Freescale Semiconductor and is now manufactured by NXP Semiconductors following the 2015 acquisition. Designed to operate in Class AB for linear amplification, it remains a catalog part for legacy W-CDMA base-station repairs and for newly-designed PCS-band infrastructure where its 22 W output rating and 1.99 GHz tuning make it a low-risk RF power stage choice. Typical applications include W-CDMA/PCS1900 base-station final-stage amplifiers, TDMA and multicarrier driver amplifiers for cellular radio, and broadband push-pull power amplifier modules. The broadband gain response also permits its use in amplifier test fixtures operating anywhere within the 1930-1990 MHz band. When designing with this device, install it with proper RF board-to-flange torque (typically 4-6 inch-pounds) and apply thermal compound at the flange-to-heatsink interface to keep junction temperature under 200C at full CW output. Always gate-bias the device with a regulated negative voltage and follow the manufacturer-recommended sequencing to avoid thermal runaway during power-up. This page synthesizes distributor pricing, drop-in NXP same-family alternatives, and practical thermal/RF design notes not found in the manufacturer datasheet.
MRF6S19100NBR1 - 22W RF Power MOSFET 1930-1990 MHz | NXP
The NXP MRF6S19100NBR1 is an N-channel enhancement-mode lateral RF power MOSFET designed for N-CDMA base station applications across 1930 to 1990 MHz, delivering 22 W average output power in a TO-272 WB-4 overmolded ceramic package. It is rated for 28 V operation with 14.5 dB typical gain and is suitable for TDMA, CDMA, and multicarrier amplifier applications in Class AB for PCN-PCS/cellular radio and WLL systems. An RF power MOSFET is a specialized lateral metal-oxide-semiconductor field-effect transistor optimized for radio-frequency power amplification rather than low-frequency switching. It sits within the hierarchy RF transistor -> power transistor -> discrete semiconductor -> active electronic component, and is engineered to deliver high gain, high efficiency, and rugged operation under mismatched load conditions typical of cellular base-station power amplifiers. Key features include 22 W P1dB-class output power at 1.99 GHz, 14.5 dB typical power gain, 28 V drain supply, integrated ESD protection, and a built-in heat-spreading ceramic package. The device is designed for high linearity required by N-CDMA signals and incorporates internal matching that simplifies external circuitry. The TO-272 WB-4 form factor provides low thermal resistance for reliable CW and pulsed operation. Architecturally the MRF6S19100NBR1 uses NXP's high-frequency laterally diffused MOS (LDMOS) process, which combines the high breakdown voltage of silicon with low parasitic capacitance for efficient switching at microwave frequencies. This LDMOS technology has become the dominant choice for cellular base-station power amplifiers from 900 MHz through 2.7 GHz due to its balance of gain, efficiency, and cost. Two such transistors can be combined in a push-pull configuration for Doherty or balanced amplifier topologies targeting modern LTE and 5G NR bands. Typical applications include 1.9 GHz PCS/cellular base-station power amplifiers, WLL (wireless local loop) infrastructure, TDMA and CDMA multicarrier line-ups, and Class AB driver stages for higher-power Doherty final stages. Designers frequently cascade it with NXP MRF6S2100N or similar higher-power devices when more output power is required. When designing with this part, ensure proper RF bypassing on the gate and drain bias lines and follow the application circuit reference layout closely. Thermal management is critical: use a copper-spreader PCB footprint and adequate airflow to keep junction temperature below 150 C during continuous CDMA multicarrier operation. This page synthesizes distributor pricing, drop-in same-package alternatives, and design notes drawn from the NXP datasheet and authorized distributor listings - engineering information that goes beyond the datasheet alone.
MRF6S19120HR5 - 19W RF Power MOSFET 1.99GHz NI-780 | NXP
The NXP MRF6S19120HR5 is a 19 W RF power MOSFET designed for N-CDMA and UMTS/WCDMA base-station and repeater amplifier stages, housed in the NI-780H-2L ceramic/bolt-down power package. It delivers 15 dB power gain at 1.99 GHz from a 28 V DC supply while remaining a 50 V-rated N-channel enhancement-mode device. The MRF6S19120HR5 is specified by NXP as a member of the HV6 RF power family, supporting continuous-wave and pulsed RF outputs in the 1.93-1.99 GHz W-CDMA downlink band. An RF power MOSFET is a lateral or vertical N-channel silicon transistor optimized to deliver useful gain and efficiency at radio frequencies where parasitic capacitances, transit time, and thermal behavior dominate small-signal FETs. Within the power-management hierarchy, this device sits between the low-frequency DC-DC converter stage and the antenna chain: it converts the regulated DC bus into an amplified RF envelope, and is preceded by a driver LDMOS stage and a bias sequencer. Its hypernym chain is: RF power transistor -> power MOSFET -> discrete semiconductor -> semiconductor device. Key specifications include 19 W CW output power at 1.99 GHz, 15 dB typical power gain at Pout = 19 W, and a drain-source breakdown of 68 V allowing high-voltage operation. The device integrates an ESD-protected gate structure and is internally input-matched for the 1.93-1.99 GHz band, reducing external matching components. Typical RF performance from NXP characterization curves shows ~30% drain efficiency at Pout = 19 W CW under W-CDMA modulation. Architecturally, the MRF6S19120HR5 uses NXP's HV6 laterally-diffused metal-oxide-semiconductor process that balances high breakdown, low feedback capacitance, and acceptable thermal resistance. The NI-780H-2L flange provides low theta_JC for direct PCB or heatsink mounting via two through-board mounting screws, and the ceramic body provides low parasitic inductance to the ground and RF ports. Typical applications include W-CDMA/UMTS base-station power amplifiers, cellular repeaters and tower-mounted boosters, and industrial RF heating at 2.0 GHz. The wide-band gain response also extends into pulsed-radar and commercial OFDM links in the same band. Designers should bias the gate near 3.5 V at idle with a regulated negative gate-supply to set quiescent current around 300 mA, and must provide a minimum 50 V drain-supply reservoir. Stable operation requires the gate-source resistor recommended in the NXP evaluation board BOM and adequate copper or cold-plate thermal management. This page consolidates distributor pricing from DigiKey, Mouser, and Octopart with parametric equivalents and NXP evaluation-board design notes not found on a single manufacturer datasheet.
MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP
The NXP MRF6S19140HR5 is a 29 W RF power N-channel LDMOS transistor designed for 1.93 GHz to 1.99 GHz base-station applications, supplied in the NI-880H-2L ceramic-isolated flange package. It operates from a 28 V drain bias, delivers 16 dB of small-signal gain at the operating frequency, and is rated for 1.15 A of pulsed drain current. The device belongs to NXP's HV6 (sixth-generation high-voltage) LDMOS family targeting W-CDMA, LTE, and UMTS base-station power amplifiers in the 1900 MHz PCS and DCS bands. A RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET designed to deliver RF (radio-frequency) power efficiently at high frequencies. LDMOS has become the dominant technology for cellular base-station power amplifiers because it combines high RF gain, good efficiency, reasonable ruggedness, and lower cost than competing GaAs or SiC devices. Within the power semiconductor hierarchy, LDMOS sits between generic power MOSFETs and more exotic wide-bandgap devices (GaN, SiC), offering the best price/performance trade-off below approximately 4 GHz. Key features of the MRF6S19140HR5 include a 28 V drain-source rating, 29 W output power (CW or pulsed per test conditions), 16 dB typical gain at 1.96 GHz, integrated ESD protection, and a built-in drain-source diode for robust operation under VSWR mismatches. The NI-880H-2L ceramic package provides low thermal resistance and is bolt-down mounted directly to the amplifier heatsink, eliminating the need for PCB thermal management. The device is internally matched for the 1.93 GHz to 1.99 GHz band, which means external matching components are minimized at the application level. This integration reduces BOM cost and simplifies PCB layout. The MRF6S19140HR5 uses NXP's HV6 LDMOS process, which delivers higher breakdown voltage and improved thermal performance compared to earlier HV5 generations. Typical applications include W-CDMA and LTE base-station power amplifiers operating in the 1930 MHz to 1990 MHz band, GSM/EDGE macro-cell amplifiers, repeater and booster stages, and industrial RF heating sources around 2 GHz. The part is also widely used in DVB-T terrestrial transmitter driver stages. When designing with this part, ensure the heatsink is properly torqued to the NI-880H flange to keep the channel-to-flange thermal resistance within the rated 0.45 C/W specification. Use a small series gate resistor (typically 10-100 ohms) to suppress parasitic oscillations, and always include a drain-side decoupling network with ferrite beads and high-Q ceramic capacitors. This page synthesizes distributor pricing, datasheet link, and design guidance not found in a single source on the open web.
MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP
The NXP MRF6S19140HSR5 is a 29 W peak RF power LDMOS transistor designed for ultra-high-frequency (UHF) RF power amplifier applications in the 1.93 GHz to 1.99 GHz band, housed in the NI-880S ceramic power package. It operates from a 28 V DC supply, draws 1.15 A of drain current, and delivers 16 dB of small-signal power gain when measured under typical two-tone W-CDMA conditions. An RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor power device optimized for high-frequency amplification in the hundreds-of-MHz to multi-GHz range. It sits within the broader taxonomy: RF power transistor -> discrete semiconductor -> RF power amplifier (PA) building block -> wireless infrastructure front-end. Unlike small-signal RF FETs, LDMOS parts handle tens of watts of continuous and peak power, making them the dominant technology for cellular base-station PAs since the early 2000s. Key features of the MRF6S19140HSR5 include a 28 V typical operating drain voltage, 29 W pulsed output power under W-CDMA conditions, 16 dB linear gain, integrated electrostatic discharge (ESD) protection, and a broadband-input 50-ohm match-friendly package geometry. The NI-880S ceramic package provides low thermal resistance suitable for fan-cooled base-station thermal envelopes and screw-down or clamp heat-sink attachment. Architecturally, the MRF6S19140HSR5 uses NXP's sixth-generation HV6 LDMOS process, which improves power density and thermal performance over earlier MRF6 generations. The high gain (16 dB) reduces the driver-stage complexity in multi-carrier PA lineups and is compatible with standard Doherty amplifier configurations. Typical applications include W-CDMA, TD-SCDMA, and LTE base-station power amplifiers operating in the 1.93-1.99 GHz UMTS band, as well as repeaters, microcells, and driver stages for higher-power macro base stations. The device suits single-ended or push-pull final-stage PA designs. When designing with this device, note that the quiescent bias point, gate-bias sequencing, and output-harmonic termination network all materially affect linearity and ACPR. Use a DC-blanked gate bias supply to prevent thermal runaway during high VSWR events. This page synthesizes distributor pricing, same-family drop-in references, and design considerations not found in the manufacturer datasheet alone.
MRF6S19200HR5 - 56W RF Power LDMOS 1.93-1.99GHz | NXP
The NXP Semiconductors MRF6S19200HR5 is a 56 W RF power LDMOS transistor designed for 1.93 GHz to 1.99 GHz base-station amplification. Housed in the NI-780H-2L ceramic package, it delivers 17.9 dB typical power gain at 28 V test conditions, with 1.6 A quiescent bias current, supporting CDMA and multicarrier amplifier applications in Class AB and Class C operation. The device is rated for a 66 V drain-source breakdown and operates from a single +28 V supply, making it a workhorse part for legacy cellular infrastructure and industrial RF power stages. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a specialized MOSFET variant optimized for high-frequency, high-power amplification. LDMOS technology dominates base-station and broadcast RF applications because it offers an excellent trade-off among gain, efficiency, ruggedness, and cost. Within the broader semiconductor taxonomy, the LDMOS sits as a subclass of power MOSFETs, itself a category of discrete semiconductors designed for switching or amplification of high-power signals. The MRF6S19200HR5 belongs to NXP's MRF6S series, a long-standing family of LDMOS devices aimed at sub-3 GHz infrastructure. Key features include 17.9 dB typical gain at 1.96 GHz, 56 W CW output power capability, internal input matching for broadband performance, and a high breakdown voltage of 66 V that provides strong margin against load VSWR mismatches. The NI-780H-2L package features a ceramic body with a flange-mount flange and gold metallization for thermal dissipation and reliability under continuous RF drive. The MRF6S19200HR5 uses NXP's 6th-generation LDMOS process, which integrates electrostatic discharge (ESD) protection and provides excellent thermal conductivity through the ceramic flange. The device's internal matching simplifies PCB-level implementation by reducing external component count, while the 28 V supply rail aligns with standard telecom power architectures. Typical applications include CDMA2000 and 1xEV-DO base-station power amplifiers, GSM/EDGE multicarrier linear amplifiers, and industrial RF heating transmitters operating in the 1.93-1.99 GHz band. It is also well-suited for repeater and femtocell final-stage power amplification. When designing with this part, ensure the heatsink provides a thermal resistance below 0.5 C/W to maintain junction temperature within safe limits at full 56 W RF output. Use a drain-supply RF choke with low DC resistance to minimize DC power loss, and strictly observe the maximum 66 V drain voltage rating to prevent avalanche breakdown. This page consolidates distributor pricing, same-package drop-in alternatives, and design considerations not presented in the manufacturer datasheet to accelerate RF power-stage selection.
MRF6S21050LR5 - 11.5W RF MOSFET 28V 2.16GHz NI-400 | NXP
The NXP MRF6S21050LR5 is a 28V N-channel RF power MOSFET designed for W-CDMA and other high-frequency wireless infrastructure applications, delivering 16 dB gain and 11.5W output power at 2.16 GHz in the NI-400 ceramic package. Operating from a 28V drain supply, it provides 16dB power gain and is rated for 450 mA continuous drain current with a total device dissipation of 11.5W, making it suited for driver and final-stage roles in macro-cell base-station power amplifiers covering the 2110-2170 MHz W-CDMA band. An RF power MOSFET is a laterally-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power operation in the VHF/UHF/microwave bands. RF power MOSFETs differ from low-frequency power MOSFETs in their use of an interdigitated gate structure, short channel lengths, and ceramic flanged packages that minimize parasitic inductance and provide a low-thermal-resistance path to the system heatsink. Within the RF power device family, they sit beneath LDMOS (laterally-diffused MOSFET) transistors - the technology used here - and above small-signal RF MOSFETs in the power-handling hierarchy. The MRF6S21050LR5 uses NXP's HV6 LDMOS process technology, which is widely adopted in cellular base-station power amplifiers because of its high breakdown voltage, excellent linearity under W-CDMA modulation, and broadband capability. Typical performance includes 16 dB small-signal gain at 2.16 GHz with high drain efficiency when operated into a properly tuned output matching network. The device's internal matching simplifies external matching circuitry, and its integrated ESD protection improves manufacturing robustness in volume production. Typical applications include W-CDMA driver and final PA stages in macro-cell base stations, GSM/EDGE linear amplifiers, and industrial/scientific RF generators operating in the 2.1-2.2 GHz band. The NI-400 ceramic package with integrated mounting flange allows direct bolted attachment to a system heatsink for low thermal resistance. When designing with this part, ensure the input/output matching networks are designed for the specific operating frequency band - S-parameter data should be used with a simulation tool such as ADS or AWR. Adequate DC-blocking and bias-decoupling networks are required to prevent parametric oscillation. Thermal management is critical: the flange must be bolted to a heatsink with thermal compound, and the drain voltage must be sequenced cleanly to avoid device stress. This page synthesizes distributor inventory, drop-in compatible alternatives from NXP's RF power portfolio, and practical design considerations for cellular infrastructure PA designers - information not consolidated in any single distributor or manufacturer page.
MRF6S21050LSR5 - 11.5W W-CDMA RF Power MOSFET | NXP | NI-400S
The NXP Semiconductors MRF6S21050LSR5 is an N-channel enhancement-mode lateral RF power MOSFET designed for W-CDMA base station amplifiers operating from 2110 to 2170 MHz, delivering up to 11.5 W of output power in an NI-400S ceramic package. Built on NXP's high-frequency lateral MOSFET process, this 28 V device achieves 16 dB power gain and is rated for 450 mA DC bias at 2.16 GHz typical operating frequency. The NI-400S ceramic package provides low thermal resistance and is compatible with reflow and screw-down mounting for high-volume base-station manufacturing. A radio-frequency power MOSFET (LDMOS) is a laterally-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power amplification in the MHz-to-GHz range. Within the discrete semiconductor taxonomy, it sits in this hierarchy: RF MOSFET -> power MOSFET -> MOSFET -> discrete transistor -> semiconductor. LDMOS devices dominate wireless infrastructure base-station power amplifiers because of their high breakdown voltage, high gain, and excellent efficiency when driven near saturation. The MRF6S21050LSR5 is a member of the HV6 (high-voltage sixth-generation) family used in 3G/4G cellular base-station RF chains. Key features include a 65 V drain-source breakdown rating, 28 V nominal operating drain voltage, 16 dB typical power gain at 2.16 GHz, 11.5 W CW output power capability, and integral ESD protection. The lateral structure gives low feedback capacitance and high intrinsic ruggedness, enabling the device to survive 10:1 VSWR mismatch at the antenna connector without destructive failure - a critical requirement for cellular infrastructure with hot-standby antenna systems. Typical applications include W-CDMA, TD-SCDMA, and multi-carrier power amplifiers in macro-cell base stations, PCS/cellular repeaters, and WLL (wireless local-loop) systems. The 2110-2170 MHz band matches the 3GPP Band 1 uplink-downlink pair, the most widely deployed UMTS frequency allocation globally. When designing with this device, follow NXP reference-design PCB stack-up guidelines and provide sufficient copper heat-spreading around the source leads. Bias the gate from a regulated negative supply through a sequencing controller to prevent partial turn-on and to protect the LDMOS from overdrive during transmit-receive switching.
MRF6S21060BR1 - 14W RF Power LDMOS Transistor 2.12GHz | NXP
The NXP MRF6S21060BR1 is a 14 W RF power N-channel enhancement-mode lateral MOSFET (LDMOS) designed for W-CDMA base station applications, housed in a TO-272 WB-4 ceramic package. It operates from a 28 V supply and delivers 15.5 dB gain at 2.12 GHz with 610 mA quiescent current, providing the efficiency and ruggedness demanded by modern cellular infrastructure. The device is characterized for frequencies up to 2170 MHz and is suitable for TDMA, CDMA, and multicarrier amplifier applications in Class AB operation. An RF power MOSFET is a specialized transistor designed to amplify radio-frequency signals at high power levels with high gain and efficiency. In the device hierarchy, the MRF6S21060BR1 sits as LDMOS -> RF power transistor -> power amplifier device -> discrete semiconductor. Laterally diffused MOSFETs dominate macro-cell base station power amplifiers because they offer a superior gain-versus-bandwidth tradeoff, higher breakdown voltage than GaAs, and lower cost-per-watt than GaN for sub-100W applications. Key features include a 68 V drain-source voltage rating, 15.5 dB power gain at 2.12 GHz, integrated ESD protection, and a thermally enhanced ceramic package qualified for demanding base-station thermal environments. The internal matching network simplifies board layout and reduces external component count, while the gold metallization ensures long-term reliability under elevated junction temperatures. Architecturally, the MRF6S21060BR1 uses an N-channel enhancement-mode LDMOS structure on a ceramic substrate with internal input and output matching. This lateral diffusion geometry minimizes parasitic capacitance while maximizing breakdown, making it well-suited to high-efficiency Doherty and Class AB final-stage designs where linearity and back-off efficiency are mission-critical. Typical applications include W-CDMA/HSPA+ and LTE base-station final-stage power amplifiers, multi-carrier GSM/EDGE amplifier drivers, TD-SCDMA infrastructure, and general-purpose 2.1 GHz industrial RF amplification. The wide bandwidth also covers the 2110-2170 MHz band used by UMTS operators worldwide. When designing with this device, ensure adequate heatsinking of the ceramic flange and that the drain supply rail includes proper RF bypass and decoupling close to the package leads. Bias sequencing (gate before drain) is required to prevent device damage during turn-on. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.