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MRF6S21060NBR1 - 14W, 2.11-2.17GHz RF LDMOS | NXP
The NXP MRF6S21060NBR1 is a 14 W average RF power N-Channel enhancement-mode lateral MOSFET (LDMOS) designed for W-CDMA base station applications covering 2110 MHz to 2170 MHz. It delivers 15.5 dB power gain at 2.12 GHz under 28 V VDD test conditions with 610 mA quiescent bias and supports class AB operation for multi-carrier amplifier designs. An RF power transistor is a specialized semiconductor device that converts DC supply energy into amplified RF output power for wireless transmission. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant technology for sub-3 GHz base-station power amplifiers because it combines high gain, high breakdown voltage, and excellent linearity at competitive cost versus GaN and SiGe alternatives. Within the RF power hierarchy, the MRF6S21060NBR1 sits in the 'macro-cell final-stage PA' category, where dozens of watts of average power at multi-MHz bandwidth must be delivered with low ACLR. Key features include a 68 V drain-source voltage rating, 14 W average output power in single-carrier W-CDMA, 15.5 dB gain, and high-efficiency operation at 28 V. The device is internally input-matched and is designed to be paired with the MRF6P21190N or MRF6V21100N driver stage in Doherty or push-pull final stages, with the exposed ceramic flange (TO-272 WB-4) providing a low-thermal-impedance path to the system heatsink. The MRF6S21060NBR1 uses NXP's sixth-generation HV6 RF LDMOS process on a ceramic-flanged package, which provides stable thermal performance under CW and pulsed operation. Its high gain reduces driver-stage requirements, while the 28 V operation balances efficiency and linearity for W-CDMA, TD-SCDMA, and multi-carrier amplifier (MCPA) topologies. According to the manufacturer datasheet, typical single-carrier W-CDMA performance is specified at VDD=28 V, IDQ=1600 mA with Pout=14 W average. Typical applications include W-CDMA/UMTS base-station final stages, TD-SCDMA power amplifiers, multi-carrier amplifier (MCPA) line-ups, and WLL/PCN-PCS cellular radio transmitters operating in the 2110-2170 MHz downlink band. When designing with this device, ensure the heatsink thermal design keeps the flange temperature below the 200 C rating, and use a proper RF PCB substrate (RO4350B or RO4003C) with controlled-impedance 50 ohm traces. Drain bias should be applied after gate bias to prevent thermal runaway. This page synthesizes distributor pricing, drop-in NXP alternative part numbers, and practical PA design considerations not found in the manufacturer datasheet alone.
MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP
The NXP Semiconductors (formerly Freescale) MRF6S21100HR3 is a 23 W average, 28 V N-channel enhancement-mode lateral MOSFET designed for W-CDMA base station applications covering the 2110 MHz to 2170 MHz band. Housed in the NI-780H-2L ceramic package, it delivers 15.9 dB gain and operates from a 28 V test supply with a quiescent drain current of 950 mA, making it suitable for driver and final-stage amplifier positions in cellular infrastructure. What is an RF Power LDMOS? An RF Power Laterally-Diffused Metal-Oxide Semiconductor (LDMOS) transistor is a power MOSFET architecture optimized for high-frequency, high-power amplification. Within the broader taxonomy, an LDMOS is a type of power MOSFET -> discrete semiconductor -> RF power device. LDMOS devices dominate cellular base station power amplifiers because they combine high RF power density, reasonable gain at GHz frequencies, and relatively low cost per watt compared to GaN alternatives in sub-3 GHz bands. Key features of the MRF6S21100HR3 include a 68 V drain-source voltage rating, 15.9 dB typical power gain at 2.14 GHz, and a rugged design rated for multi-carrier W-CDMA, TDMA, CDMA, and TD-SCDMA modulation formats. The device is 100% PAR tested for ACPR linearity, and the NI-780H-2L ceramic package provides a low thermal resistance path with bolt-down flange mounting for direct heatsink attachment. The device uses NXP's HV6 (high-voltage sixth-generation) LDMOS process technology, which offers improved efficiency and thermal performance versus earlier generations. The lateral structure simplifies biasing and enables broadband matching across the 60 MHz-wide W-CDMA downlink band. Typical applications include W-CDMA base station final-stage power amplifiers, multi-carrier cellular repeaters, TD-SCDMA infrastructure, and PCN/PCS/cellular radio driver stages. The part is also used in wireless local loop (WLL) and 2.14 GHz industrial RF links. When designing with this device, ensure adequate RF decoupling on the drain and gate bias lines, and follow the reference design PCB layout for the NI-780H-2L flange. The exposed ceramic body must be mounted to a heatsink with proper thermal compound to keep the junction below the 200 C maximum rating. This page synthesizes the NXP datasheet, current distributor pricing, drop-in package alternatives, and thermal/design considerations not found in the bare datasheet, providing an engineer-ready reference for W-CDMA power amplifier design.
MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP
The NXP MRF6S21100NBR1 is an RF power field-effect transistor delivering 23 W average output power across the 2110 to 2170 MHz band in a TO-272 WB-4 (over-molded plastic) package. It is an N-channel enhancement-mode lateral MOSFET (LDMOS) rated for 28 V operation with 14.5 dB gain at 1.05 A bias, designed specifically for W-CDMA, TDMA, CDMA, and multicarrier amplifier applications in cellular base-station infrastructure. An RF power MOSFET is a specialized discrete transistor optimized to deliver sustained RF output power at high efficiency. The term LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) refers to the silicon process architecture in which the drain current flows laterally under the gate, an arrangement that delivers high breakdown voltage, high gain, and good thermal stability for high-power RF amplification. In the cellular base-station hierarchy, this places the MRF6S21100NBR1 in the final-stage power amplifier (PA) chain, where it amplifies a low-level modulated RF signal up to a multi-watt level before reaching the antenna filter and radiating element. Key parameters include a 28 V drain supply rating, 1.05 A typical operating current at Pout of 23 W, 14.5 dB typical power gain, and operation from 2110 to 2170 MHz. The device supports pulsed and continuous operation across TD-SCDMA, W-CDMA, and multi-carrier waveforms, and includes internal ESD protection and integrated gate-source clamping. Thermal resistance is optimized for base-station heatsink mounting, with the plastic over-molded WB-4 package providing a flat top-side surface for direct thermal compound attachment. Typical applications include the output stage of W-CDMA and LTE cellular base stations operating in the 2.11-2.17 GHz UMTS Band I (uplink PA in repeaters or small-cell final stages), TD-SCDMA driver amplifiers, multicarrier power amplifiers for combined-sector transmitters, and PCS/cellular radio final-stage linear amplifiers. When designing with this device, ensure the drain voltage stays within the 28 V typical bias range (32 V absolute maximum), maintain adequate gate-bias sequencing during power-up to avoid uncontrolled drain current, and provide a low-inductance PCB-to-heatsink thermal path. Always discharge input bias networks before handling, as LDMOS devices are static-sensitive.
MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP
The NXP MRF6S21100NR1 is a 23 W average, 28 V lateral N-channel enhancement-mode RF power MOSFET designed for W-CDMA base-station transmitters in the 2110 to 2170 MHz band, supplied in a TO-270 WB-4 (Case 1486-03) plastic overmold package. The device is specified at 28 V VDD with a quiescent current of 1600 mA and delivers 14.5 dB typical power gain while supporting single-carrier W-CDMA, TDMA, CDMA, and multi-carrier amplifier signal formats. Drain voltage is rated at 28 V with a 1.05 A drain current capability and pulsed drain breakdown behavior typical of LDMOS RF power transistors. An RF power lateral MOSFET is a type of discrete power semiconductor designed specifically to amplify high-frequency signals with high efficiency and high gain. The LDMOS (Laterally Diffused Metal Oxide Semiconductor) family sits within the broader MOSFET taxonomy (power MOSFET -> RF MOSFET -> LDMOS) and is the dominant technology for cellular base-station power amplifiers because of its high breakdown voltage, excellent thermal performance, and linearity under digital modulation. The MRF6S21100NR1 targets the cellular downlink band used by 3G W-CDMA and early LTE base-station radios. Key features include 14.5 dB typical gain at 2.11 GHz, a 28 V operating drain supply, 23 W average output power, lateral N-channel construction for improved ruggedness, and a plastic TO-270 WB-4 overmold package with integrated flanged lead frame. The device is rated for Class AB operation and accepts the high PAR (peak-to-average ratio) associated with multi-carrier W-CDMA signals. Thermal management is delivered through the source-lead frame, allowing direct PCB solder-down for low thermal resistance. Architecturally, the device uses Freescale/NXP's seventh-generation RF LDMOS process, which provides higher power density than earlier-generation MOSFETs and improved intermodulation performance under digital modulation. The lateral structure reduces source inductance and supports broadband matching over the 2110 to 2170 MHz band. Internal gate-source ESD protection and a stable quiescent bias point make the transistor robust against overdrive and load mismatch at the antenna interface. Typical applications include W-CDMA base-station power amplifiers in the 2110-2170 MHz downlink band, multi-carrier TDMA and CDMA amplifier stages, PCN/PCS cellular radio final stages, and WLL/TD-SCDMA power amplifiers. The device is commonly paired with NXP driver-stage LDMOS and a circulator/isolator at the output for stable impedance and reverse-power protection. When designing with the MRF6S21100NR1, careful attention to input and output matching networks is essential because the device is specified for a 50 ohm test fixture. Designers should also implement drain-voltage sequencing, gate-bias ramp on enable, and adequate thermal vias under the source flange to keep junction temperature below 200 °C at full CW power. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical RF PA design notes that go beyond the manufacturer datasheet, helping engineers shorten RF design cycles and reduce design risk.
MRF6S21190HR3 - 2110-2170MHz, 54W RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF6S21190HR3 (formerly Freescale) is a 54 W average-output, 28 V lateral N-channel RF power MOSFET designed specifically for W-CDMA base-station final-stage PAs operating across the 2110-2170 MHz band. The device delivers 16 dB gain at Pout = 54 W Avg. under VDD = 28 V, IDQ = 1600 mA, full-band, 3GPP Test Model 1 with 64 DPCH and 50% clipping, channel bandwidth = 3.84 MHz, and a 7.5 dB PAR @ 0.01% probability on CCDF. The part is housed in the NI-880 ceramic air-cavity package with two internal leads and flanges, configured for bolt-down mounting with the matching NI-880 fixture. A base-station RF power transistor is a specialized MOSFET built for high-frequency, high-power linear amplification. Unlike a logic-level digital MOSFET, an RF power MOSFET like the MRF6S21190HR3 is over-moded to deliver high gain, low feedback capacitance, and excellent thermal conductivity. The device sits at the final stage of a multi-carrier W-CDMA PA, converting DC bias energy into RF energy at the band of interest (2110-2170 MHz, which is the downlink UMTS Band I). Key features include a single N-channel lateral geometry optimized for high breakdown, an internal input matching network that flattens gain across the 60 MHz band, integrated ESD protection on the gate, and stable thermal performance with a hardened ceramic package. The 2.11-2.17 GHz band is targeted, the drain bias is 28 V, the quiescent current is 1600 mA, the small-signal gain (Gps) is 16 dB, and the rated continuous CW handling matches the 54 W Avg. W-CDMA reference point with significant CW headroom margin. The lateral N-channel process uses field-plate and source-connected shield techniques to push the breakdown above 65 V while keeping Cds low enough to maintain efficiency at 2.1 GHz. The on-die match focuses on input impedance so that designers can place the part directly on a PCB microstrip launcher without external matching on the gate side. Typical applications include 2110-2170 MHz UMTS Band I base-station final PAs, multi-carrier W-CDMA amplifiers, WLL/MMDS mid-power links, and other high-linearity PAs in the 2 GHz region. The lateral architecture and high gain make it a strong final-stage choice where ACPR at 54 W Avg. is the headline figure of merit. When designing, ensure bolt-down torque and thermal interface materials are within the NI-880 footprint datasheet limits and that a harmonic load-pull is performed at Pout = 54 W. Be aware that gain and ACPR are temperature-sensitive and that substrate selection materially influences second-stage harmonic balance. This page integrates distributor inventory, drop-in alternative cross-references, and field design notes that go beyond the manufacturer datasheet by ranking options on ACPR-friendly pa load-pull margin.
MRF6S23100HSR3 - 20W RF Power LDMOS MOSFET 2.3-2.4GHz | NXP
The NXP MRF6S23100HSR3 is a 20 W average (P1dB-class) lateral N-channel RF power LDMOS transistor designed for the 2300–2400 MHz band in a 28 V two-carrier W-CDMA architecture, supplied in the NI-780S ceramic flangeless power package. According to the NXP datasheet, the device delivers 15.4 dB power gain and is qualified for 2 x W-CDMA, WiMAX, and other 2.3–2.4 GHz linear amplifier blocks requiring high linearity under multi-carrier drive. A Radio-Frequency Laterally Diffused Metal-Oxide Semiconductor (RF LDMOS) transistor is a power MOSFET variant engineered for high-frequency, high-power amplification. RF LDMOS devices sit in the broader transistor taxonomy between small-signal MOSFETs and Si BJT/GaAs HEMT power devices; they are widely used in cellular base-station power amplifiers because they offer high gain, reasonable efficiency, and excellent linearity at RF frequencies up to ~3.8 GHz, at cost-per-watt levels far below GaN alternatives. Key specifications for the MRF6S23100HSR3 include: frequency range 2300–2400 MHz, Pout of 20 W average under 2 x W-CDMA, power gain of 15.4 dB at the operating point, drain supply of 28 V, and the NI-780S package. The lateral N-channel structure on the NI-780S ceramic carrier provides low thermal resistance and rugged behavior into mismatched loads, which is critical for telecom infrastructure amplifiers that must survive antenna feedline faults. The device is built on NXP's high-volume sixth-generation HV6 LDMOS process, which is optimized for linear amplification in Doherty and push-pull final-stage PA modules. Its integrated ESD protection and high breakdown voltage (drain-source rating to 68 V) make it tolerant of over-voltage transients on the RF chain, simplifying the protection circuitry in the surrounding PA sub-system. Typical applications include 2.3–2.4 GHz WiMAX base-station power amplifiers, W-CDMA and LTE small-cell final stages, industrial RF heating drivers, and avionics/data-link transmitters. The device is frequently used in Doherty PA architectures where its high gain and linearity allow reduction of driver-stage complexity. When designing with this part, ensure the source leads are well-grounded with multiple vias under the package thermal area. The NI-780S package requires a copper flange-mounting scheme or PCB-cavity mount with a matched lead pattern; using the manufacturer evaluation board reference design is recommended to guarantee the rated gain and stability across production builds. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors
The NXP Semiconductors MRF6S23140HR3 is a 28 W average, 28 V lateral N-channel RF power MOSFET (LDMOS) designed for 2300-2400 MHz applications in the NI-880H-2L ceramic package. It delivers 15.2 dB power gain at 2.39 GHz with 28 V supply and is qualified for 2 x W-CDMA base-station driver or final-stage use. What is an RF power LDMOS? RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistors are a specialized class of power MOSFETs optimized for high-frequency, high-power amplification in the 1 MHz to 4 GHz range. LDMOS sits within the broader hierarchy: power MOSFET -> discrete semiconductor -> active RF component. Compared to bipolar RF transistors, LDMOS offers superior gain linearity, easier broadband matching, and better thermal stability, which has made it the dominant technology for cellular base-station power blocks since the late 1990s. The MRF6S23140HR3 operates from a 28 V DC rail, exhibits typical quiescent drain current around 1.3 A in test conditions, and provides a rugged load-mismatch tolerance suitable for Doherty and conventional class-AB amplifier topologies. Its thermal performance is enabled by a ceramic NI-880H-2L flange package with low thermal resistance, allowing direct bolt-down mounting to a heatsink or cold-plate. The device is internally input-matched for the 2.3-2.4 GHz WiMAX/LTE band, simplifying PCB layout. This part is widely specified for 2.3-2.4 GHz WiMAX, LTE Band 38, and 2 x W-CDMA macro-cell base-station power amplifiers. The 28 W average output is appropriate for driver stages of higher-power amplifiers and for small-cell or micro-cell final stages. Designers also deploy it in pulsed-RF and tactical-radio power blocks thanks to its high peak-to-average ratio handling. When designing with this device, attention to drain-bias sequencing, gate-bias stability, and harmonic-filtering is essential. Always consult the manufacturer datasheet for application-circuit reference designs, load-pull data, and recommended PCB stack-up before finalizing the layout. This page synthesizes distributor pricing, drop-in alternative listings, and practical RF design notes not consolidated in the manufacturer datasheet, supporting faster part selection and BOM validation.
MRF6S24140HSR5 - 28W 2.4GHz RF Power LDMOS | NXP Semiconductors
The NXP Semiconductors MRF6S24140HSR5 is a 28W RF power transistor built on NXP's high-voltage sixth-generation (HV6) laterally-diffused metal-oxide semiconductor (LDMOS) process, optimized for operation at 2.39 GHz with 15.2 dB power gain and 28 V drain bias. It is housed in the NI-880S ceramic package (SOT-979 family) and is designed as the final-stage RF power amplifier in 2.4 GHz industrial, scientific, and medical (ISM) band transmitters. An RF power LDMOS transistor is a specialized power MOSFET optimized for high-frequency amplification in the kilowatt-to-milliwatt range, where its lateral structure delivers high breakdown voltage, high gain, and good thermal performance. It belongs to the broader taxonomy of RF power transistors (RF MOSFETs), which are a subclass of discrete semiconductors used in the final stages of RF transmitters. LDMOS technology is the dominant choice for sub-3 GHz high-power applications because it offers an excellent trade-off between RF performance, ruggedness, and cost. Key specifications include 28 V nominal drain voltage, a tested output power of 28 W CW, 15.2 dB typical power gain at 2.39 GHz, and 1.3 A typical quiescent drain current. The device is internally matched for the 2.4-2.5 GHz band, simplifying PCB integration by reducing the external matching network to a small number of components. The NI-880S ceramic package provides a low thermal resistance path from the die to the heatsink, enabling continuous-wave operation at full rated power. The MRF6S24140HSR5 uses NXP's HV6 LDMOS technology, which provides high drain breakdown voltage for reliable operation at 28 V and strong RF performance compared with earlier HV5 and HV4 generations. This generation is widely accepted in WiMAX, point-to-point radio, and 2.4 GHz ISM applications where linearity and ruggedness are both critical. Typical applications include 2.4 GHz WiMAX base-station final-stage power amplifiers, industrial RFID readers, point-to-multipoint radio links, and the RF power stage of commercial microwave ovens and other ISM-band equipment operating in the 2400-2500 MHz range. The wideband gain response also supports adjacent applications such as medical RF ablation and industrial heating. When designing with this part, ensure the heatsink thermal resistance is sized to keep the die junction temperature below 200 °C at full CW power. Use NXP's recommended gate bias sequencing and drain decoupling layout from the datasheet reference design to preserve RF stability and broadband matching. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes for the MRF6S24140HSR5 - information not collected in a single place in the NXP datasheet alone.
MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP
The NXP MRF6S27015GNR1 is a 3 W average, 28 V single W-CDMA lateral N-channel RF power MOSFET designed for 2300-2700 MHz base station applications, housed in a TO-270-2 (Case 1265-09, Style 1) plastic gull-wing package. It delivers 14 dB typical power gain at 2.6 GHz from a 160 mA quiescent bias point, making it a workhorse final-stage PA for 2.3-2.7 GHz WiMAX, LTE, and W-CDMA infrastructure. A lateral N-channel RF power MOSFET is a discrete transistor whose drain current flows horizontally through the silicon under a high-frequency gate field, optimized for RF amplification rather than DC switching. Within the RF transistor hierarchy it sits between small-signal RF FETs (mW levels) and high-power LDMOS amplifiers (100 W+); the MRF6S series specifically targets macro-cell base-station drivers and final stages in the 1.8-2.7 GHz bands. Key features include 14 dB typical power gain at 2.6 GHz, 3 W average output power with 28 V drain bias, and an integrated ESD protection structure that survives the rigors of surface-mount assembly. The part is rated for W-CDMA single-carrier waveforms and supports the 2300-2700 MHz instantaneous bandwidth, covering the global 2.3 GHz TDD LTE / WiMAX and 2.5-2.7 GHz WiBro / BRS allocations. The device uses NXP's HV6 (High-Voltage 6th generation) lateral MOSFET process, which provides excellent thermal stability, high breakdown voltage, and reduced memory effects compared to earlier bipolar RF parts. The TO-270-2 gull-wing lead frame enables low-inductance source grounding and straightforward PCB integration with microstrip or stripline matching networks. Typical applications include W-CDMA and LTE base-station final-stage PAs, WiMAX 2.5 GHz transmitters, S-band driver amplifiers, and broadband 2.3-2.7 GHz industrial and medical RF power blocks. The 14 dB gain also lets designers use it as a driver for higher-power LDMOS final stages. When designing with this part, maintain adequate drain-bias sequencing to prevent thermal runaway, and use a low-inductance source grounding layout with multiple vias. Match the input and output to 50 ohm microstrip using the recommended reference designs from the NXP datasheet for production-ready performance. This page synthesizes distributor pricing, drop-in cross-references, and design notes not found in the manufacturer datasheet alone - enabling faster RF PA development and lifecycle planning for engineers working on 2.3-2.7 GHz infrastructure.
MRF6S27015NR1 - 3W, 28V RF Power MOSFET 2.3-2.7 GHz | NXP
The NXP MRF6S27015NR1 is a 3 W average, 28 V single W-CDMA lateral N-channel RF power MOSFET designed for 2300-2700 MHz W-CDMA base-station transmitter final-stage applications. Housed in a TO-270-2 plastic over-molded package (case 1265-09, style 1), it provides 14 dB typical gain at 2.6 GHz while delivering 3 W of average output power from a 28 V rail, all in a surface-mount lateral MOSFET layout. RF power MOSFETs are a class of discrete semiconductor devices designed specifically for high-frequency amplification of modulated signals such as W-CDMA, LTE, and WiMAX. They differ from small-signal MOSFETs in using a lateral N-channel structure with very low parasitic capacitance and inductance, allowing efficient operation into the multi-GHz range. They occupy a place in the hierarchy: RF power MOSFET -> RF power transistor -> discrete semiconductor -> semiconductor device. Key specifications of the MRF6S27015NR1 include a maximum drain-source voltage of 68 V, a typical quiescent drain current of 160 mA at 28 V, an operating frequency range of 2300-2700 MHz, an output power of 3 W average in W-CDMA with 14 dB power gain, and a ruggedness capability against 10:1 VSWR mismatch at its rated operating voltage. The device is built on NXP's HV6 lateral MOSFET process, optimized for Doherty amplifier configurations in macro-cell base-station radios. Architecturally, the MRF6S27015NR1 uses a high-breakdown lateral DMOS cell layout that provides high drain efficiency (~30% at 2.6 GHz into W-CDMA) and excellent thermal coupling between the active die region and the plastic over-mold. The matched input and 50-ohm-compatible output impedance simplifies PCB integration, allowing engineers to drop the part into existing 2.6 GHz L-PAMR or small-cell reference designs with minimal retuning. Typical applications include W-CDMA, LTE, and WiMAX base-station transmitter final stages, particularly the carrier and peaking devices in a Doherty configuration. Its 3 W average output capability and high gain also make it suitable for driver stages in higher-power macro-cell amplifiers, repeater units, and small-cell pico-cell radios operating in the 2.3-2.7 GHz wireless bands. The principal design trade-off is thermal: 28 V operation at 3 W average gives rise to roughly 7-10 W peak dissipation during W-CDMA peaks (PAPR ~10 dB). Engineers must provide adequate copper thermal vias beneath the TO-270-2 package, sized to keep the junction below 150 C during worst-case conditions. This page synthesizes distributor pricing, drop-in and pin-compatible alternatives, and practical thermal/RF layout notes beyond what the manufacturer datasheet alone offers.
MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP
The NXP MRF6S27050HR5 is a 7-watt RF power LDMOS transistor optimized for WCDMA and other 2.62 GHz wireless infrastructure applications, housed in the NI-780H-2L ceramic package. It is rated for 28 V typical operation, delivers 16 dB power gain at 2.62 GHz, and is tested at 500 mA quiescent current for WCDMA driver and final-stage amplifier designs. The device is part of NXP's MRF6S series of high-frequency LDMOS RF power transistors, a family widely used in cellular base-station power amplifiers. An RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET architecture designed to deliver high RF output power at high frequencies. LDMOS devices sit within the broader power MOSFET taxonomy (power MOSFET -> RF MOSFET -> LDMOS) and dominate base-station PA design because of their high breakdown voltage, high gain, and excellent thermal performance in ceramic air-cavity packages such as the NI-780 family. Key features of the MRF6S27050HR5 include 68 V drain-source breakdown rating for high-voltage ruggedness, a 16 dB typical power gain that simplifies multi-stage PA line-ups, and excellent WCDMA linearity performance verified at 28 V / 500 mA bias. The device is internally input-matched, allowing easier PCB integration, and the NI-780H-2L package provides a screw-down flange for direct mounting to a heatsink or chassis ground plane, ensuring low thermal resistance under continuous-wave (CW) and pulsed RF drive. Architecturally, the MRF6S27050HR5 uses NXP's sixth-generation HV6 LDMOS process, which improves intermodulation distortion and power-added efficiency relative to earlier MRF6 generations. Its drain is rated for 68 V transient, providing ruggedness against output mismatch and antenna load variation — a key requirement for base-station PAs exposed to VSWR events from disconnected or faulty feeders. Typical applications include WCDMA/UMTS driver and final PA stages in the 2.5–2.7 GHz wireless bands, WiMAX and LTE small-cell power amplifiers, and other 2.62 GHz industrial RF amplifier designs. It is also used as a driver for higher-power final-stage LDMOS devices in Doherty and push-pull configurations. When designing with this device, ensure the source leads are properly grounded with multiple low-inductance vias and that the NI-780H flange is firmly bolted to the heatsink. Bias sequencing (Vgs before Vds) and proper drain-side harmonic termination are essential for both linearity and long-term reliability. This page synthesizes NXP datasheet specifications, distributor stock signals, and drop-in same-family and cross-family alternatives from the MRF6S series and competing RF LDMOS families — engineering context not consolidated in any single distributor listing.
MRF6S27050HSR3 - 7W 28V RF Power MOSFET 2.5-2.7GHz | NXP
NXP Semiconductors (formerly Freescale) MRF6S27050HSR3 is a 7 W average, 28 V single W-CDMA lateral N-channel RF power MOSFET designed for the 2500-2700 MHz band. Housed in the NI-780S ceramic package (CASE 465-06, STYLE 1), the device is qualified for high-efficiency linear amplifier stages in cellular base-station and repeater transmitters operating in the 2.5-2.7 GHz sub-bands of WiMAX, LTE-TDD, and 3G W-CDMA. An RF power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a discrete solid-state device that converts DC input power into RF output power with high gain and efficiency. Part of the broader transistor family (MOSFET -> field-effect transistor -> discrete semiconductor), RF power MOSFETs in the LDMOS (Laterally Diffused MOS) family are the dominant technology for sub-3 GHz high-power transmitters because they combine high breakdown voltage, simple gate bias, and excellent ruggedness into mismatched loads compared to bipolar or GaAs alternatives. Key electrical ratings include a 28 V typical drain supply, 7 W average output power, 16 dB power gain at 2.62 GHz, and operation across 2500-2700 MHz. The HS suffix indicates the high-efficiency S-band variant with optimized load networks that delivers LDMOS-class efficiency for W-CDMA single-carrier signals with high peak-to-average ratios. Built-in ESD protection and an integrated drain-to-source zener clamp simplify the host amplifier module BOM. Typical applications include 2.5-2.7 GHz WiMAX/LTE-TDD base-station power amplifiers, 3G W-CDMA S-band driver stages, repeater and small-cell transmitter final stages, and RF front-end line-replacement cards. The ceramic NI-780S flange provides low thermal resistance, enabling CW or pulsed operation up to the datasheet's rated P1dB envelope. When designing with this part, ensure the source leads are properly grounded through a low-inductance via fence so that the 28 V drain current does not exceed the thermal package limit. Match the gate-bias network with the recommended sequence for the MRF6S27050 family and decouple the drain feed with broadband chip capacitors placed within 1 mm of the package flange.
MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS
The Freescale Semiconductor (NXP) MRF6S27085HR3 is a 20 W average output RF power lateral N-channel enhancement-mode LDMOS field-effect transistor designed for 2600-2700 MHz single-carrier N-CDMA base-station applications, housed in the NI-780H-2L ceramic package (CASE 465-06, STYLE 1). The device operates from a nominal 28 V DC supply and delivers 15.5 dB typical power gain at 2.66 GHz with 900 mA quiescent bias current. An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a type of power MOSFET optimized for high-frequency, high-power amplification. LDMOS parts sit within the broader taxonomy: RF power transistor -> discrete RF semiconductor -> power amplifier building block. They dominate cellular base-station power amplifier (PA) designs because of their high breakdown voltage, excellent thermal stability, and simplified single-supply biasing versus older bipolar RF transistors. Key features include 28 V drain operating voltage, 68 V drain-source breakdown rating, 900 mA typical bias current at 28 V test, and 15.5 dB gain in the 2.6-2.7 GHz band. Thermal resistance is characterized for the NI-780 ceramic flange-mount package, which is bolted directly to the amplifier heat-sink for lowest possible junction-to-case thermal impedance. The device is internally input/output matched for the 2.6 GHz band, reducing external matching complexity. The MRF6S27085HR3 uses a lateral DMOS cell with a thermally optimized ceramic package, enabling reliable 20 W CW or W-CDMA-class average power operation. The -HR3 tape-and-reel packaging suffix supports high-volume SMT-compatible flange-mount assembly when paired with automated pick-and-place fixtures, although the ceramic flange itself still requires bolt-down thermal mounting. Typical applications include W-CDMA/LTE 2.6 GHz micro-cell and macro-cell base-station PAs, WiMAX and WiBro 2.5-2.7 GHz amplifier stages, multi-carrier amplifier (MCPA) final stages, and WLL (Wireless Local Loop) Class AB or Class C driver amplifiers. The same die is also used in pulsed-RF industrial and aerospace links operating in the 2.5-2.7 GHz sub-band. Designers should ensure the NI-780 flange is bolted to a heat-sink with a thin layer of thermal compound, and that the input/output matching network is tuned for the exact sub-band (2.6 vs 2.7 GHz) to realize the rated 15.5 dB gain and >30% efficiency. The HSR3 same-die variant shares the NI-780 package but is offered as a different reel orientation/tape configuration for automated assembly.
MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP
The NXP (formerly Freescale) MRF6S27085HR5 is a 20W RF power LDMOS transistor designed for W-CDMA and multi-carrier base-station amplifier applications in the 2500-2700 MHz band, supplied in the NI-780H-2L ceramic-acorn package. An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a specialized MOSFET variant engineered to deliver high RF output power with high gain and efficiency at RF frequencies. LDMOS devices dominate cellular base-station power amplifiers because they offer a superior trade-off between peak power, gain, bandwidth, and cost compared to silicon bipolar or GaAs alternatives. Within the broader hierarchy, LDMOS sits as a sub-class of RF power MOSFET -> power transistor -> discrete semiconductor -> electronic component. Key specifications include a 28V supply operation, 900 mA quiescent test current, 15.5 dB small-signal gain at 2.66 GHz, 20W output power, and a 68V drain-source rated voltage. The device is internally matched for the 2600-2700 MHz band, which simplifies PCB layout and reduces external component count. The NI-780H-2L package provides a low thermal-resistance path that is critical for dissipating heat at continuous CW and multi-carrier operation. Architecturally, the MRF6S27085HR5 uses NXP's HV6 LDMOS process, which integrates ESD protection, an on-chip internal input-matching network, and a thermally optimized source-down flange. The 68V breakdown rating provides generous headroom over the 28V operating supply, enabling reliable operation under high VSWR load-mismatch conditions typical of base-station installations. Typical applications include W-CDMA/UMTS base-station power amplifiers at 2.5-2.7 GHz, multi-carrier GSM/EDGE amplifiers, WiMAX and WiBro amplifier blocks, and Class AB linear amplifier designs for cellular infrastructure. The part is also used in repeater and small-cell final-stage PA modules where high linearity is required. When designing with this part, ensure the drain bias is applied through a dedicated sequencing controller (Vgs must reach the threshold before Vds is applied) to prevent device damage from dv/dt transients. Provide a minimum of 1 oz copper on the host PCB directly under the ceramic flange for adequate heat extraction. This page synthesizes distributor pricing, drop-in alternatives from the NXP HV6 LDMOS family, and practical design notes not consolidated in the manufacturer datasheet, giving the design engineer a one-stop reference for sourcing and applying the MRF6S27085HR5.
MRF6S27085HSR5 - 20W 2.66GHz RF Power LDMOS | NXP
The NXP Semiconductors MRF6S27085HSR5 is a 20W RF power field-effect transistor (LDMOS) designed for CDMA base station applications in the 2600-2700 MHz band, packaged in the NI-780S ceramic power package. It operates from a 28V VDD supply with a quiescent current of 900 mA and delivers 20W average output power with 15.5 dB gain at 2.66 GHz. An RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor FET optimized for high-power radio-frequency amplification. LDMOS technology is the dominant building block of modern wireless infrastructure base stations, occupying the role: RF power transistor -> discrete RF semiconductor -> power amplifier device -> wireless infrastructure component. Compared to bipolar and GaAs alternatives, LDMOS offers the best balance of power density, efficiency, cost, and ruggedness for sub-3 GHz cellular bands. Key features of the MRF6S27085HSR5 include 15.5 dB typical gain, 28V VDD operation, 68V drain-source voltage rating, 900 mA quiescent bias current, and Class AB/Class C compatibility for both WLL and multicarrier amplifier topologies. The device is also characterized for WiMAX and WiBro service profiles, giving designers a single part that covers several OFDM-based waveforms in the 2.6 GHz band. Architecturally, the MRF6S27085HSR5 uses NXP's HV6 LDMOS process, which provides high breakdown voltage for 28V operation and integrated ESD protection. The NI-780S ceramic package with flanged leads is optimized for direct bolt-down to a copper or aluminum heatsink, minimizing thermal resistance from junction to case and enabling CW and pulsed modes without external cooling in well-engineered thermal designs. Typical applications include 2.6 GHz CDMA/WCDMA base station power amplifiers, WiMAX and WiBro macro-cell transmitters, multicarrier amplifier modules for LTE band 38/41, and 2.7 GHz industrial/scientific RF links. Designers select this part when they need a proven, mature 28V LDMOS in a rugged flanged ceramic package for outdoor or remote radio head deployments. Design consideration: bias sequencing must gate the drain voltage with the gate bias to avoid destructive turn-on transients; follow NXP's HV6 family application note for the recommended sequencing and over-voltage protection circuitry. Thermal design must also account for Pdiss of roughly (VDD - V knee) * I, with adequate bolt-down torque on the flange to maintain the datasheet thermal resistance. This page synthesizes distributor pricing, drop-in alternatives, parametric comparisons, and practical RF amplifier design notes that are not consolidated in any single manufacturer datasheet, accelerating part selection and PCB-to-PCB thermal planning for 2.6 GHz infrastructure designers.
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
The NXP MRF6S9045NBR1 is an RF power field-effect transistor (N-Channel enhancement-mode lateral MOSFET) designed for broadband commercial and industrial applications up to 1000 MHz, delivering 10 W average output power at 880 MHz from a 28 V supply with 22.7 dB gain. Housed in the NI-880H-2L (TO-272-2) ceramic package, it is optimized for large-signal common-source amplifier blocks in 28 V base-station equipment, including single-carrier N-CDMA driver and final stages. The high gain and broadband performance make it equally useful for industrial RF heating, FM broadcast, and sub-1 GHz ISM links. An RF power MOSFET is a lateral DMOS device engineered to deliver high RF output power with high gain and efficiency at a specified frequency band, replacing older bipolar transistors in base-station power amplifiers. Its role in the system hierarchy is: RF power transistor → power amplifier (PA) → transceiver RF front-end → base-station subsystem. Lateral MOSFETs offer higher gain-bandwidth product, lower feedback capacitance, and easier broadband matching than bipolar parts, at the cost of higher on-resistance per unit area. Key features include a 68 V minimum drain-source breakdown voltage, 350 mA quiescent drain current, 22.7 dB typical power gain at 880 MHz, and 175 W absolute maximum power dissipation. The enhancement-mode gate structure simplifies bias circuits (no negative gate supply required) and the ceramic NI-880 package provides a low thermal resistance path from die to heatsink, essential for sustained CW and pulsed-CDMA operation. The device is internally input-matched for the 800-1000 MHz band, reducing external component count on the demo board. Typical applications include 880 MHz N-CDMA base-station final stages, 900 MHz GSM/EDGE driver amplifiers, industrial RF heating at 13.56/27/40 MHz (with retuning), and UHF TV/FM broadcast transmitters. When designing with this part, mount the flange directly to a flat copper or aluminum heatsink using thermal compound; any mounting torque variation directly impacts Rth and long-term reliability. Ensure the gate bias network is low-impedance at the operating frequency to prevent parametric oscillation, and always sequence the drain supply with the gate bias to avoid forward-biasing the gate oxide.
MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP
The NXP MRF6S9045NR1 is an RF power N-channel enhancement-mode lateral MOSFET (LDMOS) designed for 880 MHz single-carrier N-CDMA base station applications, delivering 10 W average output power at 28 V VDD with 22.7 dB gain and 350 mA quiescent bias. It is housed in a TO-270-2 overmolded plastic package rated for broadband operation up to 1000 MHz. A lateral MOSFET (LDMOS) is a specialized RF power transistor architecture that places the drain on the top surface of a thin epitaxial layer, enabling high breakdown voltage, high gain, and excellent thermal performance at RF frequencies. LDMOS sits in the broader hierarchy: power transistor -> RF power transistor -> LDMOS -> base-station PA building block. It dominates cellular base-station power amplifier final stages because of its high efficiency, broadband capability, and ability to survive severe VSWR mismatches. Key features include 22.7 dB typical power gain, single-carrier N-CDMA ACPR performance optimized for linearity, and high ruggedness - the device tolerates infinite VSWR at rated supply voltage. Drain efficiency at 10 W Pout reaches approximately 33 percent at 880 MHz, and the device operates from a single 28 V rail typical of macro-cell base-station infrastructure. The TO-270-2 case provides low thermal resistance for reliable CW and pulsed operation. Designed by Freescale Semiconductor (now NXP), the part traces to a well-documented RF LDMOS process node optimized for cellular infrastructure PA designers. The "N" suffix indicates transition to lead-free terminations, and the device is drop-in compatible with the earlier non-N suffix variant (MRF6S9045R1), enabling RoHS-conversion board retrofits without PCB layout changes. Typical applications include 880 MHz cellular base-station power amplifiers (single-carrier N-CDMA, GSM EDGE, multi-carrier), RFID and industrial scientific RF power stages, public-safety UHF band linear amplifiers, and broadband general-purpose RF amplification up to 1000 MHz. When designing with the MRF6S9045NR1, ensure the 50 ohm input and output matching networks present the datasheet-recommended load impedances at the fundamental and second harmonic to achieve the rated gain and efficiency. Proper bias sequencing (gate voltage applied before drain voltage) is mandatory to avoid device damage. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
MRF6S9125NBR1 - 880MHz 27W RF Power LDMOS | NXP Semiconductors
The NXP Semiconductors MRF6S9125NBR1 is an N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) RF power transistor rated for 27 W average output power at 28 V, delivering 20.2 dB gain at 880 MHz in the 865-960 MHz band, packaged in a TO-272 WB-4 ceramic/bolt-down flanged housing. An RF Power LDMOS (Laterally-Diffused Metal-Oxide-Semiconductor) is a specialized power MOSFET whose drift region is diffused laterally under the gate. This architecture is the dominant technology in modern base-station RF power amplifiers because it combines high RF output power, high drain efficiency, high ruggedness under VSWR mismatch, and excellent thermal conductivity when mounted directly to a copper heatsink. LDMOS devices sit within the broader hierarchy: RF power transistor -> discrete semiconductor -> power amplifier building block -> base-station RF front-end. Key features of the MRF6S9125NBR1 include 28 V typical drain operation with a 68 V maximum drain-source rating, 950 mA quiescent/test current at the published test condition, 20.2 dB power gain, and broadband performance up to 1000 MHz. The device is designed for single-N-CDMA, GSM, GSM EDGE, and multicarrier amplifier applications, with high gain and broadband capability eliminating the need for narrow-band matching networks. The part is fabricated using NXP's high-voltage LDMOS process with a lateral channel and an integrated source-connected field plate. The TO-272 WB-4 ceramic package provides a low-thermal-resistance path from die to heatsink, with the bolt-down flange enabling direct mounting to a spreader or cold plate. The "NB" suffix indicates tape-and-reel packaging for high-volume assembly. Typical applications include 880 MHz cellular base-station power amplifiers, GSM/EDGE repeaters, multicarrier driver stages, and industrial RF heating/generator amplifiers operating in the 865-960 MHz ISM/RFID band. Designers should note the device was succeeded by the MRFE6S9125NR1/NBR1 family per NXP PCN12895, with the "E" denoting an enhanced/replacement die generation.
MRF6S9130HR5 - 27W 880MHz LDMOS RF Power Transistor | NXP
The NXP MRF6S9130HR5 is a 27 W N-channel enhancement-mode lateral MOSFET (LDMOS) designed for cellular base station RF power amplifier applications in the 865 to 960 MHz band. Built around a 28 V supply rail and packaged in the NI-780H-2L ceramic flange-mount case, it delivers 19.2 dB typical power gain at 880 MHz with a 950 mA quiescent bias, supporting N-CDMA, GSM, GSM EDGE, and multi-carrier amplifier (MCA) topologies with class AB efficiency. An RF power transistor is a specialized semiconductor that converts DC supply current into a controlled, high-frequency output signal at the antenna feed of a wireless transmitter. Within the cellular base-station hierarchy, this category sits below RF power amplifiers and above general-purpose LDMOS FETs; it inherits noise, gain, and ruggedness figures from RF ICs while occupying the higher-power edge of the macro-cell transmitter chain. LDMOS in particular dominates the sub-3 GHz macro base-station segment because of its high breakdown voltage, good thermal conductivity, and lower cost per watt than GaAs or GaN at sub-1 GHz frequencies. Key electrical specs include 28 V typical operation (a 68 V-rated breakdown part), 19.2 dB power gain at 880 MHz, 27 W CW output power, and operation across 865-960 MHz. The N-channel enhancement-mode structure simplifies gate-bias generation; a standard 0 to +5 V gate-source bias is sufficient, eliminating negative-voltage rails. The ceramic NI-780H-2L flange package screws directly to the heatsink, providing the low thermal resistance required for continuous CW operation at 27 W. Architecturally, the lateral MOSFET cell geometry provides high breakdown ruggedness and inherently good linearity, making the part well-suited to N-CDMA and GSM EDGE modulation formats that have tight adjacent-channel leakage (ACLR) and error-vector-magnitude (EVM) masks. The lateral drain structure also exhibits high VSWR tolerance, surviving 10:1 output mismatch at full rated power - critical for production-line test cells where antenna loads can be unpredictable. Typical applications include 900 MHz GSM/EDGE base-station PA final stages, N-CDMA macro-cell driver and final amplifiers, and multi-carrier amplifier (MCA) modules feeding sector antennas. Its 27 W output supports 2-4 channel macro-cell sectors at moderate-power cell-site configurations. Designers should bolt the NI-780H-2L flange directly to a copper or aluminum heatsink with a thin layer of thermal compound; forced-air cooling is recommended above 20 W dissipation. Bias sequencing should apply gate voltage before (or simultaneously with) drain voltage to avoid parametric shifts. Input/output matching networks must target 50 ohms at 880-915 MHz with second-harmonic trapping required for spectral-mask compliance. This page synthesizes distributor stock, parametric substitution candidates, and engineering design context into one concise reference - a layer of practical guidance the bare NXP datasheet does not provide.
MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF6S9130HSR3 is a 27 W average, 28 V lateral N-channel RF power MOSFET designed for single N-CDMA base station amplification at 880 MHz, housed in the NI-780S ceramic package (CASE 465-06, Style 1). The part delivers 19.2 dB typical gain and is characterized for 950 mA quiescent operation from a 28 V DC supply rail, making it suitable for driver and final stages in sub-1 GHz cellular infrastructure. A radio-frequency power MOSFET (LDMOS) is a lateral double-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power operation in the 100 MHz to 30 GHz range. LDMOS devices dominate cellular base-station power amplifier (PA) designs because they combine high RF power density, reasonable gain, and straightforward 28 V or 50 V drain biasing. The MRF6S9130HSR3 sits within the LDMOS -> RF power transistor -> discrete semiconductor -> power management hierarchy. Key differentiating features include 19.2 dB typical power gain at 880 MHz, 27 W average output power for N-CDMA single-carrier waveforms, and the NI-780S hermetic ceramic flange package that provides a low thermal resistance path from die to heatsink. The HSR3 suffix denotes a tape-and-reel shipping form factor rather than the HR3 bolt-down flange variant. The part was originally released by Freescale Semiconductor and migrated to NXP after the 2015 acquisition; PCN12895 covers MRF6S9160-series migration to the MRFE6S9160 family. Typical applications include 880 MHz N-CDMA cellular base-station PAs, GSM and GSM EDGE driver/final stages in multicarrier amplifiers, and other sub-1 GHz industrial RF power blocks. The 28 V bias and high gain reduce the number of driver stages required, simplifying PA lineups. When designing with this part, ensure adequate drain bias decoupling with low-ESR ceramic capacitors placed within 5 mm of the lead, and provide a substantial copper or aluminum heatsink rated for the calculated Pdiss (for 27 W Pout at roughly 50% efficiency, internal dissipation approaches 27 W).
MRF6S9130HSR5 - 27W 880MHz RF Power LDMOS | NXP
The NXP MRF6S9130HSR5 is a 27 W RF power LDMOS field-effect transistor designed for high-performance wireless base station amplifiers operating at 880 MHz. Housed in the NI-780S ceramic package, it delivers 19.2 dB power gain at 28 V test conditions with 950 mA quiescent current, optimized for N-CDMA, GSM and GSM EDGE base-station transmitter line-ups where linearity and ruggedness are critical. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET fabricated with a lateral drift region that supports high breakdown voltage while maintaining excellent RF gain and efficiency. RF power LDMOS sits within the broader category of discrete semiconductors > RF FETs > RF power transistors, and is the dominant device technology for sub-6 GHz cellular base-station final-stage PA design because of its high power density, broadband gain, and proven reliability in 28 V to 50 V class-AB operation. Key features include 19.2 dB typical gain at 880 MHz, 27 W CW output power capability at 28 V Vdd, high ruggedness for VSWR mismatch tolerance, and built-in ESD protection. The NI-780S ceramic-flanged package provides low thermal resistance and is compatible with standard RF PCB and heatsink assembly practices used in macro-cell base stations. The device supports both pulsed and continuous-wave operation modes per the Freescale/NXP datasheet family. The MRF6S9130HSR5 uses NXP's 6th-generation high-voltage LDMOS process technology, which integrates a controlled drain extension, optimized source grounding, and a thermally robust die layout. This architecture delivers consistent RF performance across the 800-900 MHz cellular band while maintaining the high breakdown voltage needed for 28 V rail operation and excellent intermodulation distortion performance. Typical applications include 880 MHz cellular base-station final-stage PAs, GSM/EDGE linear power amplifiers, N-CDMA driver and output stages, and industrial RF heating amplifiers. Per the NXP datasheet, this part was specifically characterized for cellular infrastructure equipment operating in the 869-894 MHz US cellular and 925-960 MHz GSM-900 bands. Design consideration: maintain the device within its published SOA under all mismatch conditions - VSWR of 10:1 at all phase angles is the typical ruggedness benchmark. The NI-780S package requires proper torque and thermal compound when bolted to the heatsink, and the RF input/output matching networks must be tuned for the specific 880 MHz band of operation. This page synthesizes distributor pricing, parameter verification against the manufacturer datasheet, and application context not consolidated elsewhere for this obsolete but still-sought-after NXP/Freescale RF power transistor.
MRF6S9160HR3 - 880MHz 35W RF Power MOSFET | NXP/Freescale
The NXP/Freescale MRF6S9160HR3 is an 880 MHz, 35 W average, 28 V lateral N-channel RF power MOSFET designed for single N-CDMA base-station final-stage amplification. Housed in the NI-780H-2L (CASE 465-06, STYLE 1) ceramic/air-cavity package, it delivers 20.9 dB gain at 880 MHz from a 28 V supply while drawing approximately 1.2 A of quiescent bias current. An RF power MOSFET is a high-frequency, high-power transistor optimized for switching or amplifying RF energy in the VHF/UHF/microwave spectrum, typically built on a lateral silicon process with a thick metalized source for low parasitic inductance. Within the broader component taxonomy, an RF power MOSFET sits below general-purpose power MOSFETs and above small-signal RF FETs, serving as the active gain element in the final stage of a cellular base-station power amplifier chain. Key features of the MRF6S9160HR3 include 880 MHz CW/Pulsed operation, 35 W average output power, 20.9 dB typical power gain, single N-CDMA-driven linearity, and a ceramic NI-780H package with flanged leads for screw-down PCB mounting. The lateral N-channel enhancement-mode architecture is intrinsically rugged under high VSWR and provides stable class-AB operation when biased at approximately 1.2 A DC. From an architecture standpoint, the device is part of NXP's MRF6S series, a family of 28 V lateral RF MOSFETs covering 700-2700 MHz cellular bands. The 880 MHz tuning, 28 V rail, and integrated ESD structure make the part particularly well suited for macro-cell base-station PA line-replacement designs requiring high gain and broadband stability without external matching network rework. Typical applications include GSM/EDGE/CDMA2000 macro base-station final-stage PAs, repeater and tower-mounted amplifier (TMA) drivers, 900 MHz industrial/scientific RF generators, and high-power ISM-band transmitters. Designers typically match the device with a 50 Ω microstrip input/output network and a 1.2 A quiescent bias supply. A practical design consideration: the MRF6S9160HR3 requires a flange-mount heatsink and adequate forced-air cooling at full 35 W output. The lateral N-channel structure is tolerant of brief load-mismatch events, but sustained high reflected power will trigger thermal shutdown of the underlying silicon die. This page synthesizes distributor availability, NXP datasheet electrical parameters, drop-in compatible variants in the MRF6S series, and practical base-station PA design notes not consolidated on the manufacturer's product page.
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
The NXP MRF6S9160HSR3 is a 35 W average, 28 V single-N-CDMA lateral N-channel RF power MOSFET designed for 865-960 MHz cellular base-station applications. Housed in the NI-780S ceramic/Flange package, it delivers 20.9 dB power gain at 880 MHz with 1.2 A quiescent bias and supports both N-CDMA, GSM, and GSM EDGE waveforms including multicarrier amplifier topologies. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a specialized power MOSFET optimized for high-frequency, high-power RF amplification. Within the broader semiconductor hierarchy, RF LDMOS devices sit at the intersection of discrete power transistors and RF/microwave components, designed specifically for the final-stage PA (power amplifier) in wireless infrastructure. They typically combine high breakdown voltage, excellent thermal performance, and broadband gain for Doherty, push-pull, and single-ended PA architectures used in 4G LTE and legacy 2G/3G networks. Key features of the MRF6S9160HSR3 include 21 dB typical power gain at 880 MHz, 31% drain efficiency, and -46.8 dBc ACPR at 750 kHz offset in N-CDMA. It is rated for 28 V VDD operation with a 68 V drain-source voltage rating, providing substantial headroom for VSWR mismatch. The part is internally matched for simplified board integration and includes integrated ESD protection. The device uses NXP's high-voltage LDMOS process technology with a lateral structure that minimizes parasitic capacitance, enabling broadband performance from 865 MHz through 960 MHz. Its NI-780S flange-mount package provides a low thermal resistance path to the system heatsink, essential for dissipating the 100+ W peak power in continuous CDMA service. Typical applications include cellular base-station final-stage PAs, GSM/EDGE multicarrier amplifiers, and N-CDMA driver stages. It is widely used in 900 MHz repeaters, microcells, and macrocell base stations where linearity and efficiency are both critical design parameters. Design consideration: Always use sufficient external matching networks to present the correct load impedance at the fundamental and harmonic frequencies. The datasheet-recommended application circuit should be followed closely, as LDMOS devices are sensitive to load-pull characteristics beyond the matched operating point. This page synthesizes distributor pricing, drop-in same-package and migration alternatives, and practical design notes not found in the manufacturer datasheet alone, including guidance on the MRFE6S9160HSR3 device-migration path per PCN12895.
MRF6V13250HR5 - 250W RF Power LDMOS, 1300MHz, NI-780 | NXP
The NXP (formerly Freescale) MRF6V13250HR5 is a 250 W RF power transistor built on laterally-diffused metal-oxide-semiconductor (LDMOS) technology, designed for very-high-frequency (VHF) and ultra-high-frequency (UHF) continuous-wave and pulsed applications from 960 MHz to 1500 MHz. It delivers 22.7 dB typical gain at 1300 MHz when tested at 50 V and 100 mA quiescent current, packaged in the NI-780H-2L ceramic-flanged form factor. The device is rated to 120 V drain-to-source and is intended for high-power CW and pulsed RF amplification. A radio-frequency power transistor (RF LDMOS) is a specialized discrete semiconductor optimized to amplify high-frequency signals with high efficiency and ruggedness, typically used as the final stage in a transmitter chain. RF transistors sit within the broader hierarchy of discrete semiconductors -> transistors -> RF transistors -> RF power MOSFETs. The LDMOS architecture combines a lateral current flow with a vertical double-diffused structure, providing high breakdown voltage, low feedback capacitance, and excellent thermal conductivity through the ceramic flange. Key specifications include 250 W CW output power capability, 22.7 dB gain at 1300 MHz, and operation from 50 V supply. The NI-780H-2L ceramic-metal flange package provides a low thermal resistance from junction to the heatsink surface, enabling sustained high-power operation with appropriate cooling. The 120 V drain-source voltage rating provides ample headroom for pulsed avionics and radar waveforms. Architecturally, the MRF6V13250HR5 uses a single N-channel LDMOS die designed to be stable into a 50 ohm load with broadband matching networks. The high gain reduces the number of driver stages needed in a transmitter chain, while the LDMOS process offers intrinsic thermal stability and tolerance to load mismatch. Internal input and output matching structures simplify board-level integration in Class AB amplifiers. Typical applications include 1300 MHz avionics transponders, Distance Measuring Equipment (DME), Tactical Air Navigation (TACAN), secondary surveillance radar, and industrial RF heating systems. The wide 960-1500 MHz coverage suits both aerospace navigation bands and industrial/scientific telemetry links. Designers should mount the device on a copper or brass heatsink with proper thermal interface material, and add a snubber network to protect against load mismatch. The 50 V supply rail should be well-decoupled to minimize RF feedback through the DC path. This page synthesizes distributor pricing, drop-in-compatible NXP and cross-brand alternatives, and practical thermal/PCB design notes not collated on any single manufacturer page.