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H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps FBGA-96 | SK Hynix
The SK Hynix H5AN8G6NCJR-VKC is an 8Gb (512M x 16) DDR4 SDRAM operating at 2666 Mbps data rate, powered from a 1.14V to 1.26V supply and housed in a 96-ball FBGA package. It supports operating temperatures from 0C to +95C and integrates advanced DDR4 features including auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic on-die termination (ODT), and ZQ calibration. A DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a volatile memory IC that transfers data on both rising and falling clock edges, sitting within the memory hierarchy as DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 SDRAM -> semiconductor memory. DDR4 doubles the bandwidth of DDR3 while lowering operating voltage from 1.5V to 1.2V, making it the dominant main-memory technology for computing and embedded systems. Key features of the H5AN8G6NCJR-VKC include the 8 Gbit density organized as 512 megawords x 16 bits, a 1.333 GHz clock rate delivering 2666 MT/s bandwidth per pin, and low operating currents (28 mA standby typical, 45 mA operating per JLCPCB data). The x16 organization with data-mask support simplifies byte-lane designs in embedded processors that lack full 64-bit memory controllers. Architecturally, the device is a CMOS DDR4 SDRAM from SK Hynix's H5AN8G6NCJR family (8Gb x16 -xxC speed grade), implementing bank-group architecture, programmable CAS latency, and dynamic ODT to maintain signal integrity at high data rates. ZQ calibration keeps output driver impedance accurate across temperature and voltage drift. Typical applications include embedded main memory for industrial PCs, networking equipment, set-top boxes, automotive infotainment (commercial temperature 0C to +95C), and memory modules requiring high density in a compact footprint. Design consideration: DDR4 signal integrity at 2666 Mbps requires length-matched fly-by routing of the clock and command/address bus, and proper termination per the memory controller's ODT settings; power distribution should target the 1.2V VDD rail with low-ESR bulk and high-frequency decoupling capacitors. This page synthesizes distributor pricing, same-family and cross-brand drop-in alternatives, and practical DDR4 design notes not found in the manufacturer datasheet alone. Pricing references are as of 2026-09-04.
H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix
The SK hynix H5AN8G8NAFR-PBC is an 8Gb CMOS Double Data Rate 4 (DDR4) Synchronous DRAM organized as 1G x 8, operating from a 1.2V supply in a 78-ball FBGA package. It belongs to the H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC family, which SK hynix positions for main-memory applications requiring large memory density and high bandwidth. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, a class of volatile semiconductor memory that synchronizes data transfer to a clock and transfers data on both clock edges. In the system hierarchy it sits under SDRAM -> DRAM -> volatile memory ICs and serves as the primary working memory for CPUs, SoCs, and memory controllers in servers, desktops, notebooks, and embedded systems. Key features of this device include 8Gb density in a single x8 organization, a 1.2V core supply that lowers power versus DDR3, a 78-ball FBGA surface-mount package, and lead-free, halogen-free, RoHS-compliant construction. Internal banks support concurrent activation, and the DDR4 interface adds features such as bank-group architecture, DBI (data bus inversion), CA parity, and connectivity test (TEN) mode support noted in the datasheet. Technically, the device uses CMOS process technology with the standard DDR4 command set: ACTIVATE, READ, WRITE, REFRESH (including self-refresh), PRECHARGE, and Mode Register Set. Address inputs A0-A17 provide row addresses for ACTIVATE and column addresses for READ/WRITE, with A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15 and WE_n/A14 multiplexing additional functions per the SK hynix datasheet Rev. 1.2 (July 2017). Typical applications include PC and server main memory modules (UDIMM, RDIMM, SODIMM), embedded systems with DDR4 memory controllers, networking equipment, industrial computers, and set-top or smart-home platforms needing 8Gb-per-chip density and high bandwidth. A key design consideration: DDR4 requires careful length-matched routing, on-die-termination (ODT) configuration, and VTT termination on address/command lines; verify the memory controller supports the -PBC speed bin timings before layout. This page synthesizes verified datasheet data, distributor availability, drop-in alternatives, and practical DDR4 design notes not consolidated in the manufacturer datasheet.
H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix
The SK hynix H5AN8G8NAFR-RDC is an 8Gb CMOS Double Data Rate 4 (DDR4) Synchronous DRAM organized as x8, ideally suited for main memory applications that require large memory density and high bandwidth, housed in a 78-ball FBGA surface-mount package. The device is Lead-Free and Halogen-Free and RoHS compliant. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant class of main-memory ICs in servers, workstations, and embedded computing systems. Within the memory hierarchy, a DDR4 SDRAM chip sits at the level of main system memory: it is a volatile DRAM IC that stores data in capacitor-based cells, refreshed continuously, and communicates with a memory controller over a source-synchronous, double-data-rate interface clocked by differential CK/CK# signals. Key features of the H5AN8G8NAFR family include 8 Gbit density per die, a x8 I/O organization (1,073,741,824 x 8), operation at 1.2V nominal core supply (VDD/VDDQ) with a separate 2.5V VPP supply for wordline bootstrapping, and burst lengths of 8 (BL8) with on-die termination (ODT) and data mask (DM) support on the x8 configuration. The -RDC speed grade supports DDR4-2666 data-rate operation with JEDEC-standard timing. Technically, DDR4 introduced bank-group architecture (four bank groups in the 8Gb monolithic die, eight banks total) allowing interleaved accesses to increase effective bandwidth, plus a reduced 1.2V signaling environment compared with DDR3's 1.5V, lowering dynamic power roughly proportional to V squared. The device uses differential data strobes (DQS/DQS#), a programmable CAS latency, and JEDEC mode-register configuration via MRS commands; a dedicated RESET# ball simplifies power-rail sequencing during system bring-up. Typical applications include PC client and server DIMM modules (UDIMM, RDIMM, SODIMM), embedded and industrial motherboards, networking equipment line cards, and set-top or smart-TV platforms that require dense main memory. In module designs, nine x8 devices build an ECC-equipped 8GB rank. Design consideration: respect the JEDEC DDR4 power-up sequence - apply VPP before or with VDD, hold RESET# low until all supplies stabilize, and provide accurate on-die termination settings; AC timing and routing must follow fly-by termination practice for multi-rank loads. This page synthesizes datasheet facts, drop-in alternatives, pricing, and design notes not found in the raw manufacturer datasheet, providing engineers with a single citable reference.
H5AN8G8NAFR-UHC - 8Gb DDR4 SDRAM 2400Mbps | SK Hynix
The SK Hynix H5AN8G8NAFR-UHC is an 8Gb CMOS Double Data Rate IV (DDR4) synchronous DRAM organized as 1G x 8, operating at a 2400 Mbps data rate (PC2400) from a 1.2V VDD supply, housed in a 78-ball FBGA (PBGA78) surface-mount package. It is ideally suited for main memory applications that require large memory density and high bandwidth. DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, a class of volatile memory that sits within the broader hierarchy of DRAM -> semiconductor memory -> memory ICs. Compared with DDR3, DDR4 lowers the operating voltage from 1.5V to 1.2V, increases bank counts, and raises transfer rates, allowing system designers to achieve higher bandwidth at lower power - a key requirement for servers, workstations, and high-performance embedded platforms. Key features of this device include the 8Gbit density (1G x 8 organization), DDR4-2400 speed grade (UHC suffix), and lead-free and halogen-free construction with RoHS compliance, as stated in the SK Hynix datasheet. The x8 organization simplifies DRAM controller interfacing and supports single-device ECC deployments in embedded designs where a full 64-bit or 72-bit bus is not practical. Architecturally, the part belongs to the H5AN8GNAFR family (H5AN8G4NAFR-xxC, H5AN8G8NAFR-xxC, H5AN8G6NAFR-xxC), which shares a common die and FBGA-78 footprint across x4, x8, and x16 organizations. The CMOS process, internal bank architecture, and DDR4 protocol features such as bank groups enable the sustained 2400 Mbps/pin bandwidth required by modern memory controllers. Typical applications include server and workstation main memory modules (UDIMM, RDIMM, SODIMM), industrial computing and embedded boards with soldered-down DDR4, networking equipment line-card memory, and set-top or smart-TV system memory. In each case the 8Gb density allows high-capacity arrays with fewer devices, reducing BOM count and board area. A key design consideration is signal integrity: at 2400 Mbps, DDR4 fly-by routing, on-die termination (ODT), VTT termination, and careful length matching of the DQ/DDR4 address buses are essential. Verify the exact speed-grade timing parameters (tCK, CL, tRCD, tRP) against the official SK Hynix datasheet for the UHC suffix before finalizing controller settings. This page synthesizes distributor availability data, drop-in family alternatives, and practical DDR4 design notes in one place - information not consolidated in the manufacturer datasheet alone.
H5AN8G8NAFR-UHCR - 8Gb DDR4 SDRAM 2400 1.2V | SK Hynix
The SK Hynix H5AN8G8NAFR-UHCR is an 8Gb (1G x 8) CMOS Double Data Rate 4 (DDR4) Synchronous DRAM operating at 1.2V with a 2400 Mbps data rate, packaged in a 78-ball FBGA (PBGA78) surface-mount package. It belongs to the H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC family, which SK hynix describes as ideally suited for main memory applications requiring large memory density and high bandwidth. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory. In the memory hierarchy it sits as main system memory (DRAM), below CPU caches and above storage. Compared with DDR3, DDR4 halves the interface supply voltage to 1.2V, increases the internal bank count (typically 16 banks across 4 bank groups), and raises transfer rates, delivering higher bandwidth at lower power per bit. Key features of the H5AN8G8NAFR-UHCR include 8Gbit density organized as 1G x 8, a 2400 Mbps/pin data rate (PC2400 per distributor listings), and a compact 78-ball FBGA footprint suited to dense PCB layouts. The part is lead-free and halogen-free and is RoHS compliant, as stated on the SK hynix datasheet title block. The device uses CMOS process technology with a DDR4 interface: differential clock inputs, on-die termination (ODT), bank-group architecture for higher effective bandwidth, and command/address signaling consistent with the JEDEC DDR4 SDRAM standard class. As an x8 component it presents a single DQ byte lane with DQS/DQS# strobes, simplifying controller interconnect in single-rank or multi-rank designs. Typical applications include desktop and notebook main memory modules (UDIMM/SODIMM), embedded and industrial computing boards, networking and telecommunications equipment, and server platforms using component-level DRAM. High density per component (8Gb) allows fewer devices per board, reducing BOM count and routing complexity. Designers should observe DDR4 power-integrity requirements: a clean 1.2V VDD rail, appropriate VPP supply, and fly-by command/address routing with per-byte ODT tuning. Signal-length matching of DQS to DQ per byte lane is critical at 2400 Mbps. Verify speed-bin suffix compatibility when sourcing alternates, since the suffix encodes speed grade and packing option (the trailing R denotes tape-and-reel packing). This page synthesizes distributor listings, cross-reference data, drop-in alternative MPNs, and practical DDR4 design notes not found in the manufacturer datasheet alone.
H5AN8G8NAFR-UHI - 8Gb DDR4-2400 x8 SDRAM | SK Hynix
The SK Hynix H5AN8G8NAFR-UHI is an 8Gb CMOS Double Data Rate 4 (DDR4) Synchronous DRAM organized as 1G x 8, operating at DDR4-2400 data rates (PC2400) on a nominal 1.2V supply, housed in a 78-ball FBGA surface-mount package. DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, a category of volatile main-memory ICs that transfers data on both the rising and falling edges of the clock signal. In the memory hierarchy, DDR4 SDRAM sits as the main system memory between CPU caches and mass storage, feeding processors with high-bandwidth working data. The DDR4 generation introduced lower operating voltage (1.2V versus 1.5V for DDR3), bank grouping, and higher densities per die, making it the dominant main-memory standard for servers, workstations, and embedded platforms. Key features of the H5AN8G8NAFR include 8Gb (1 billion bytes x 8 organization) density per die, high-bandwidth data transfer suited to main-memory applications requiring large memory density, lead-free and halogen-free construction (RoHS compliant per the manufacturer datasheet), and JEDEC-class electrical specifications for interoperability with standard DDR4 memory controllers. Architecturally, the device is a CMOS DRAM organized into banks with bank-group addressing, supporting burst lengths and on-die termination consistent with the DDR4 JEDEC interface. The x8 organization simplifies memory subsystem design for controllers that prefer byte-wide devices, and the FBGA package provides low-inductance ball connections essential for signal integrity at 1200 MHz clock rates. Typical applications include desktop and server main memory modules (UDIMM, RDIMM, SODIMM), embedded computing boards, networking equipment line cards, and industrial systems requiring large DRAM capacity. The 8Gb density allows 8GB modules from just eight x8 devices. Design considerations: DDR4 requires careful length matching of address/command and data lines, proper VTT termination, and power-rail sequencing of the 1.2V VDD supply. Speed-grade suffixes (UHI, UHC, RDC, PBC) define supported CAS latency and operating temperature range, so verify the suffix against your controller timing table. This page synthesizes distributor stock data, drop-in alternatives within the H5AN8G8NAFR family, and practical design notes not found in the manufacturer datasheet alone.
H5AN8G8NAFR-VKC - 8Gb DDR4-2666 SDRAM 1.2V | SK hynix
The SK hynix H5AN8G8NAFR-VKC is an 8Gb (1G x 8) CMOS Double Data Rate 4 (DDR4) Synchronous DRAM operating at DDR4-2666 speed grade from a 1.2V supply, housed in a 78-ball FBGA package. It is lead-free and halogen-free and is RoHS compliant per the manufacturer datasheet. A DDR4 SDRAM is a type of synchronous dynamic random-access memory that transfers data on both rising and falling edges of the clock (double data rate). Within the memory hierarchy, DDR4 SDRAM sits under the SDRAM family, which in turn belongs to the broader DRAM and volatile semiconductor memory categories. DDR4 devices are the dominant main-memory technology for servers, workstations, desktop PCs, and embedded computing modules, offering higher density, lower operating voltage, and better bandwidth than the previous DDR3 generation. Key features of the H5AN8G8NAFR family include 8Gb density in a single die, an x8 (1G x 8) organization suited to ECC-based and register-less designs, a DDR4-2666 data rate (CL19 class timing for the -VKC bin), and a nominal 1.2V core supply that reduces power consumption versus DDR3. Bank-group architecture and burst lengths of 8 enable high sustained bandwidth for memory-intensive workloads. Technically, the device uses SK hynix CMOS process technology with internal banks organized for parallel access. The VKC speed bin is qualified for DDR4-2666 operation with standard JEDEC-defined DDR4 command timing, on-die termination (ODT), and DLL for output skew control. The x8 organization simplifies DIMM and onboard solder-down designs where single-bit error correction (SECDED) is implemented at the controller level. Typical applications include main memory for industrial controllers, computing modules, networking equipment, storage systems, embedded logging platforms, and firmware/data logging where large density and high bandwidth are required, as stated in the manufacturer datasheet description. Design consideration: DDR4 signal integrity demands length-matched routing, careful ODT calibration, and controller-level training (write leveling, read training); verify the memory controller supports the -VKC (2666) speed bin and 1.2V supply rail before layout. This page synthesizes distributor sourcing data, drop-in alternatives from the SK hynix DDR4 family and cross-brand equivalents, plus practical design notes not found in the manufacturer datasheet alone.
H5AN8G8NCJR-PBC - 8Gb DDR4 SDRAM, 1.2V | SK Hynix
The SK Hynix H5AN8G8NCJR-PBC is an 8Gb (1 GB) CMOS Double Data Rate IV (DDR4) Synchronous DRAM in the CJR die revision family, organized as 1G x 8 (x8 configuration) and supplied in a 78-ball FBGA package. It operates from a 1.2 V core supply and supports high-bandwidth main-memory operation with fully synchronous behavior referenced to both rising and falling edges of the clock. DDR4 SDRAM is the fourth generation of double-data-rate synchronous DRAM, the dominant volatile main-memory technology in PCs, servers, workstations and embedded computing platforms. In the memory hierarchy it sits below CPU cache and above storage, providing the large working set that processors require. DDR4 improved on DDR3 with lower operating voltage (1.2 V versus 1.5 V), bank groups, a lower interface voltage (SSTL12), and higher pre-validated data rates. Key features of the H5AN8G8NCJR family include fully synchronous operation latched on both clock edges, 8 internal banks with bank-group architecture, on-die termination (ODT), data mask (DM) support for write masking, programmable CAS latency, and DQS byte-lane strobes for source-synchronous data capture. The NCJR die revision is SK hynix's 8Gb-class DDR4 used widely in DIMM and solder-down memory designs. The device uses a multi-bank CMOS core with address/command latching on every clock edge, burst lengths of BL8, and DLL-based output timing for the source-synchronous interface. Internal refresh and self-refresh modes support data retention across temperature ranges, while the FBGA-78 ball map is standardized across the DDR4 component ecosystem. Typical applications include PC and workstation UDIMM/SODIMM main memory, server RDIMM modules, embedded x86 and ARM platforms with solder-down memory, networking equipment line-card memory, and industrial computing systems that require high density and bandwidth. Designers must respect DDR4 PCB routing rules: matched fly-by address/command routing, per-byte-lane length matching for DQ/DQS, and controller-calibrated ZQ output impedance. JEDEC-standard SPD programming on module-based designs should reflect the PBC speed grade and die revision. This page synthesizes distributor availability data, drop-in alternatives from the same package family, and practical design notes not found in the manufacturer datasheet.
H5AN8G8NCJR-UHC - 8Gb DDR4-2400 SDRAM FBGA-78 | SK hynix
The SK hynix H5AN8G8NCJR-UHC is an 8Gb (1G x 8) DDR4 SDRAM memory IC operating at DDR4-2400 (PC4-19200) data rates, powered from a 1.2V VDD supply and housed in a 78-ball FBGA package. It is ideally suited for main-memory applications requiring large memory density and high bandwidth. DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous DRAM) is a class of volatile memory IC that transfers data on both rising and falling edges of a differential clock, synchronizing all operations to the clock. Within the memory hierarchy, DDR4 SDRAM sits below DDR5 and above DDR3, offering higher density, lower operating voltage (1.2V vs 1.5V for DDR3), and improved bandwidth. It remains the dominant main-memory standard for servers, PCs, and embedded computing modules. Key features of the H5AN8G8NCJR-UHC include 8Gb density in a single x8 organization (1G x 8), DDR4-2400 speed grade (the UHC bin supports 2400 MT/s at CL17), fully synchronous operation referenced to both clock edges, and bank-group architecture for improved random-access efficiency. The part is lead-free and halogen-free per SK hynix documentation, and RoHS code Yes is listed by distributor records. Technically, the H5AN8G8NCJR family uses SK hynix CMOS DDR4 process technology with internal bank groups that allow faster column-to-column access in different bank groups. The 8-bit data width per device simplifies 64-bit and 72-bit (ECC) memory bus designs using 8 or 9 devices per rank. Termination is handled on-DIMM/on-board per DDR4 JEDEC-style signaling, reducing signal integrity complexity versus DDR3. Typical applications include desktop and laptop DIMM modules, server RDIMM/LRDIMM components, embedded computing modules, industrial controllers, networking equipment main memory, and consumer electronics requiring high-bandwidth memory. The CJR die revision (CJR/UHC bin) is also popular in overclocked consumer memory kits, with documented stable operation above 3000 MT/s in enthusiast systems. When designing with this device, ensure proper address/command/command-clock termination per DDR4 routing guidelines and verify the memory controller supports the 2400 MT/s CL17 timing bin and 1.2V operating point. This page synthesizes distributor pricing, same-footprint drop-in alternatives, and procurement data not consolidated in the manufacturer datasheet.
H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix
The SK hynix H5AN8G8NCJR-VKC is an 8Gbit (1G x 8) DDR4 SDRAM operating at 2666 Mbps data rate from a 1.14V to 1.26V supply, housed in a 78-ball FBGA package rated from 0C to +85C. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, a volatile memory technology in the broader hierarchy of memory ICs -> DRAM -> synchronous DRAM. It transfers data on both rising and falling edges of the clock and sits at the heart of main-memory subsystems requiring large density and high bandwidth. Key features of this device include fully synchronous operation referenced to both rising and falling edges of the clock, auto self-refresh, a data mask function, dynamic on-chip termination (ODT), an asynchronous reset function, ZQ calibration, write leveling, CRC, and auto precharge. These features support JEDEC-standard DDR4 platform designs and simplify controller integration. Technically, the part uses SK hynix CMOS DDR4 process technology with an 8-bank architecture, 1.2V-class core operation that lowers power versus DDR3, and per-ball FBGA packaging that improves signal integrity and thermal performance at high data rates. The -VKC speed bin supports DDR4-2666 (1.6 GHz clock domain, 2666 Mbps/pin) with typical operating current around 30 mA and low standby current around 3 mA. Typical applications include desktop and notebook main memory modules, servers and workstations, industrial PCs, networking equipment, embedded systems, and set-top boxes where 8Gb density per chip and DDR4 bandwidth are required. Design consideration: DDR4 routing demands length-matched, fly-by terminated command/address lines, dynamic ODT tuning, and ZQ calibration resistor placement close to the ball for signal integrity. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
H5ANAG4NBJR-PBC - 16Gb DDR4 SDRAM | SK hynix | Main Memory
The SK hynix H5ANAG4NBJR-PBC is a 16Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM in a 96-ball TFBGA (FBGA) package, designed for main-memory applications that require high density and high memory bandwidth. Part of SK hynix's 16Gb DDR4 SDRAM family, it interfaces to a DDR4 memory controller with industry-standard DDR4 signaling. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology in servers, workstations, desktops, and embedded systems. Compared with DDR3, DDR4 provides higher transfer rates, lower operating voltage (1.2V VDD versus 1.5V), bank-group architecture for faster random access, and improved on-die termination (ODT) schemes. In the system hierarchy it sits as the main system memory tier between CPU caches and storage. Key features of the H5ANAG4NBJR family include high 16Gb (2G x4 / 1G x8 / 512M x16 organization class) density per die, the DDR4 bank-group architecture that shortens random row/column access cycling, programmable CAS latency and additive latency, on-die termination, and CRC/write parity features for data integrity in reliability-sensitive designs. Architecturally, the die is a CMOS DRAM organized into banks and bank groups, supporting burst lengths of 8 (BL8) with DDR4 burst-chop options, and supports the standard DDR4 mode-register set (MR0-MR6) for configuration. The device is specified by SK hynix as ideally suited for main memory applications requiring large memory density and high bandwidth, per the family datasheet. Typical applications include server DIMM modules and memory down designs, industrial PCs, networking equipment line cards, and embedded computing platforms. When paired with a DDR4 memory controller that supports bank-group timing (tCCD_S/tCCD_L), the device sustains high sustained bandwidth. Design consideration: DDR4 requires careful attention to signal integrity - fly-by addressing topology, per-byte termination, and VDDQ decoupling. Follow JEDEC DDR4 layout guidance and the SK hynix datasheet recommendations for ball map and reference design. This page synthesizes distributor data, same-family drop-in alternatives, and practical design notes beyond the raw datasheet to support sourcing and design decisions.
H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix
The SK hynix H5ANAG4NBJR-RDC is a 16Gb (gigabit) DDR4 SDRAM organized 4G x 4, operating at 1.2V VDD in a 78-ball FBGA package, offering DDR4-2666 data rates for mainstream server, desktop, and embedded main-memory designs. DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous DRAM) is the dominant class of volatile main memory in computing systems. A DDR4 device transfers data on both rising and falling edges of a differential clock (CK/CK#), is fully synchronous, and improves on DDR3 by lowering core voltage from 1.5V to 1.2V, adding bank groups (allowing faster burst accesses within a group structure), and introducing a DBI (data bus inversion), CA parity, and DLL-off mode. In the system hierarchy it sits as: DRAM -> DDR4 SDRAM -> main memory -> memory subsystem. Key features of the H5ANAG4NBJR family include 16-bit prefetch architecture with bank-group operation, on-die termination (ODT), DLL and DLL-off modes, CA parity for command/address integrity, and data CRC for write data reliability. The -RDC suffix denotes lead-free, halogen-free construction with industrial temperature support; SK hynix consumer/industrial DDR4 datasheets specify case-temperature operation from -40C up to 85C (with extended operation to 95C under specified refresh conditions), making the RDC grade suitable for industrial and networking environments beyond standard commercial limits. The device supports programmable CAS latency, additive latency, burst lengths of 8 (BL8) with MRS-programmable options, and self-refresh with self-refresh entry/exit for low-power standby. Per SK hynix product information, the 16Gb DDR4 family delivers up to 3200MT/s in faster bins while consuming roughly 20% less operating voltage than DDR3, and the H5ANAG4(8_6)NBJR computing series is documented for main-memory applications requiring large density and high bandwidth. Typical applications include desktop and notebook DIMMs (UDIMM/SODIMM), embedded and industrial control memory, networking routers and switches, gaming consoles, and set-top boxes where a single 16Gb x4 component provides 2GB of memory per device. Design consideration: DDR4 x4 devices require careful fly-by routing of CK/CA on multi-rank boards, per-byte DQS/DQ termination via ODT, and adherence to the JEDEC DDR4 78-ball FBGA footprint for land-pattern compatibility. This page synthesizes verified distributor data, same-footprint drop-in alternatives from the SK hynix DDR4 family, and practical design notes not found on the manufacturer product page.
H5ANAG4NBJR-UHC - 4Gb DDR4 SDRAM 1.6GHz FBGA-96 | SK hynix
The SK hynix H5ANAG4NBJR-UHC is a 4Gbit DDR4 SDRAM organized as 256M x16, operating from a 1.14V to 1.26V supply at data rates up to 1.6 GHz (DDR4-1600 class), housed in a 96-ball FBGA (PBGA96) package rated from -40C to +95C. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth-generation JEDEC-class DRAM technology that stores each bit as charge on a capacitor within a dense memory cell array. In the system memory hierarchy, the SDRAM sits below the memory controller in a CPU, FPGA, or SoC platform, providing the main working memory tier between caches and mass storage. The x16 organization means the device presents 16 data bits per access, which simplifies solderdown for embedded systems that do not need the full 64/72-bit server bus width. Key features of the H5ANAG4NBJR family include automatic self-refresh for data retention in low-power states, a data mask (DM) function for partial writes, an asynchronous reset input for rapid state initialization, dynamic on-die termination (ODT) for signal-integrity tuning, ZQ calibration for output driver impedance accuracy, write leveling for fly-by topology timing, and CRC protection on critical buses. These functions collectively relax board-level timing margins and support reliable operation over the extended industrial temperature range. Technically, the device operates from a nominal 1.2V VDD rail (1.14V to 1.26V tolerance), a significant reduction versus the 1.5V of DDR3, cutting dynamic I/O power. Internal banks are accessed through the DDR4 burst-oriented protocol, and the -UHC suffix denotes SK hynix speed/temperature grade coding; confirm the exact speed bin and CAS latency in the manufacturer datasheet for your controller configuration. Typical applications include embedded controllers, industrial automation modules, networking equipment, FPGA-based processing cards, computing modules, and firmware/data logging systems that require a soldered-down, x16, extended-temperature DRAM. Design consideration: DDR4 fly-by routing requires length-matched address/command traces, per-byte ODT tuning via ZQ calibration, and a clean 1.2V rail with adequate bulk and high-frequency decoupling; verify controller compatibility with the exact die revision. This page synthesizes distributor pricing, drop-in same-family alternatives, and practical DDR4 design notes not found in the manufacturer datasheet.
H5ANAG4NBJR-VKC - 16Gb DDR4 SDRAM FBGA-78 | SK hynix
The SK hynix H5ANAG4NBJR-VKC is a 16 gigabit DDR4 SDRAM in the NBJR FBGA-78 (7.5 mm x 11 mm) ball-grid-array package, built on SK hynix's advanced DDR4 DRAM process and speed-graded with the VKC binning code. As a member of the DDR4 SDRAM family, it targets main memory and buffering systems that need high density in a single-chip footprint. A DDR4 SDRAM is a synchronous dynamic random-access memory that transfers data on both clock edges (double data rate), synchronizing to a host memory controller through CK/CK# differential clocking. Within the memory hierarchy, DDR4 DRAM sits in the family of volatile semiconductor memory (DRAM -> SDRAM -> DDR SDRAM -> DDR4 SDRAM -> DDR5 SDRAM), and it remains the dominant main-memory technology in servers, workstations, and industrial compute platforms. Key features identified across the SK hynix NBJR DDR4 family include an extended operating temperature range from -40 C to +95 C case temperature with auto self-refresh, a data mask (DM) function for partial writes, an asynchronous reset function for fast state recovery, dynamic on-chip termination (ODT), ZQ calibration for output impedance matching, write leveling for fly-by topology signal integrity, and CRC (command/address parity) protection. The VKC suffix denotes the SK hynix commercial speed grade within the DDR4 binning system; exact speed-bin parameters are listed in the specifications table below where verified. Architecturally, the device uses an 8n-prefetch DDR4 core with bank groups, allowing burst transfers to be interleaved across banks for higher effective bandwidth while the internal core runs at a fraction of the I/O rate. DDR4 lowers the core operating voltage relative to DDR3, cutting memory subsystem power by roughly 20% for the equivalent bandwidth, per SK hynix DDR4 product literature. Typical applications include server DIMMs and memory modules, industrial computing and network processing line cards, embedded compute modules that support DDR4 memory-down designs, and test-and-measurement systems buffering high-rate data streams. The -40 C to +95 C industrial option makes the NBJR family especially relevant for outdoor telecom and factory-automation environments. Design consideration: maintain the DDR4 routing rules for fly-by command/address topology, and enable ZQ calibration and dynamic ODT per the JEDEC DDR4 specification to guarantee signal integrity at rated data rates; always consult the SK hynix part-number decoder to confirm speed bin, temperature grade, and package for the exact suffix ordered. This page synthesizes distributor stock data, drop-in family alternatives, and practical design notes in one place - information not consolidated in the raw manufacturer datasheet.
H5ANAG6NAMR-UHC - 16Gb DDR4-2400 SDRAM x16 1.2V | SK hynix
The SK hynix H5ANAG6NAMR-UHC is a 16Gb (1Gx16) DDR4 SDRAM operating at DDR4-2400 data rates from a single 1.2V supply, housed in a 96-ball FBGA (PBGA96) package. The UHC speed grade bin denotes DDR4-2400 (PC4-19200) operation with standard CL22-class latency, making it a high-density main memory component for embedded and industrial systems. DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random access memory, a type of volatile memory that stores data in capacitor-based cells refreshed at regular intervals. Within the memory hierarchy, DDR4 sits below LPDDR (mobile) and above DDR3, offering higher density, lower operating voltage, and bank-group architecture. It is the dominant DRAM class for computing modules, industrial controllers, and networking equipment main memory. Key features of this component include 16Gb density organized as 1G x 16, a low 1.2V core supply that reduces power consumption versus DDR3 (1.5V), and the bank-group architecture of DDR4 that enables higher effective bandwidth at moderate clock rates. The x16 organization simplifies bus design for embedded controllers that cannot implement full 64-bit DDR4 channels. The CMOS process die supports normal power class operation. Technically, the H5ANAG6NAMR family is a 16Gb CMOS Double Data Rate IV SDRAM suited for main memory applications requiring large density and bandwidth, according to the SK hynix Consumer DDR4 H5ANAG6NAMR datasheet (Rev1.0). The die supports multiple speed bins (PB/RD/TF/UH/VK), with UHC corresponding to DDR4-2400 timing. The FBGA package minimizes board area and improves signal integrity versus older TSOP packaging. Typical applications include industrial controller main memory, firmware boot and embedded logging buffers, computing modules (SODIMM/COM Express), networking equipment line-card memory, and replacement sourcing for legacy DDR4 BOM lines. Design consideration: x16 DDR4 devices use differential data strobes and a dedicated reset pin; ensure the controller supports 16-bit DDR4 mapping and that VDDQ termination follows the SK hynix reference design for 2400 MT/s signal integrity. This page synthesizes distributor availability data, same-package alternatives, and drop-in substitution guidance not consolidated in the manufacturer datasheet.
H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix
The SK hynix H5ANAG6NBJR-RDC is a 16Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM organized as x16, delivering data rates up to 2666 Mbps in a compact FBGA (Ball Grid Array) surface-mount package. It operates from a 1.2V VDD supply, providing high bandwidth main memory with lower power consumption than previous generations. DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, the dominant main-memory technology for computers and embedded systems. As a volatile memory class within the broader DRAM hierarchy, DDR4 transfers data on both rising and falling edges of the clock, achieving double the bandwidth of DDR3 at the same clock rate while reducing operating voltage from 1.5V to 1.2V. SK hynix DDR4 SDRAMs offer fully synchronous operation referenced to both rising and falling edges of the clock, with all addresses and control inputs registered on the positive edge of the clock and data qualification via DQS strobes. The H5ANAG6NBJR-RDC offers 16Gb density per component, enabling large memory configurations with fewer devices. The -RDC speed grade supports 2666 Mbps operation, and the device conforms to the JEDEC DDR4 SDRAM standard. Internal bank grouping, burst chop, and on-die termination reduce signal-integrity burden on the memory controller. Per SK hynix product documentation, the 16Gb DDR4 family (H5ANAG4/8/6NCJR and related NBJR speed grades) targets main-memory applications requiring large memory density and high bandwidth. Typical applications include server main memory modules (RDIMM/LRDIMM), desktop PC DIMMs, networking and telecommunications equipment, industrial computing, and embedded systems based on x86 or ARM processors with DDR4 memory controllers. The x16 organization suits designs that require 16-bit data buses or are populating narrow channels. A key design consideration is signal integrity: DDR4 fly-by routing with on-die termination (ODT), length-matched traces, and reference voltage (VTT) termination quality directly determine the achievable data rate. Memory controllers must be trained for read/write leveling at 2666 Mbps operation. This page synthesizes verified distributor data, drop-in same-family alternatives, pricing tiers, and practical DDR4 design notes not consolidated in the manufacturer datasheet.
H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix
The SK Hynix H5ANAG6NBJR-UHC is a 4Gb DDR4 SDRAM organized as 256M x 16, fabricated in CMOS process technology and housed in a 96-ball PBGA (FBGA-96, TFBGA) lead-free and halogen-free package. The -UHC speed grade corresponds to the DDR4-2666 operating bin, supporting data rates up to 2666 Mbps/pin with CAS latency appropriate to that bin. DDR4 SDRAM (Double Data Rate fourth-generation synchronous dynamic random access memory) is the dominant main-memory technology for computing and embedded systems. Within the memory hierarchy it sits between CPU caches and storage, providing high-bandwidth volatile storage. DDR4 improved on DDR3 with lower operating voltage, bank-group architecture, and higher pre-fetch efficiency, making it the standard DRAM interface for industrial controllers, networking equipment, and embedded modules. Key features of the H5ANAG6NBJR family, as listed by distributor data, include auto self-refresh and an operating temperature range of -40C to +95C, dynamic on-chip termination (ODT), asynchronous reset, ZQ calibration, write leveling, data mask (DM) functionality, and CRC support. These features are aimed directly at robust high-speed signal integrity and reliability in industrial-grade designs. The x16 organization reduces the external device count required to assemble a given memory width, simplifying power distribution since only two power rails (VDD/VDDQ at 1.2V nominal for DDR4) are needed per rank. The multi-bank page-burst access architecture with auto/self-refresh supports both bandwidth-hungry streaming workloads and low-power retention modes. Typical applications include embedded computing modules (such as SoC FPGA boards), industrial automation controllers, networking line cards, and replacement sourcing for legacy BOMs. The industrial temperature option makes the part suitable for fanless and outdoor equipment where -40C cold-start is required. Design consideration: DDR4 fly-by routing with on-die termination requires careful length matching and ZQ resistor placement; always terminate VTT dynamically through ODT and validate timing margins at the target data rate across temperature. This page synthesizes distributor pricing, drop-in alternatives within the same H5ANAG6NBJR/H5AN4G6NBJR FBGA-96 family, and practical design notes not found in the manufacturer datasheet.
H5ANAG6NCMR-VKI - 16Gb DDR4 SDRAM x16, 1.2V FBGA | SK Hynix
The SK Hynix H5ANAG6NCMR-VKI is a 16Gb CMOS Double Data Rate 4 (DDR4) Synchronous DRAM organized as x16, operating from a 1.2V supply at the VK speed grade (DDR4-2666 class) in an FBGA surface-mount package. The -I industrial temperature suffix supports extended operating environments beyond standard commercial ranges. A DDR4 SDRAM is a volatile memory device that stores data as charge on capacitors within a dense CMOS cell array, synchronized to an external clock to transfer data on both rising and falling clock edges. In the memory hierarchy, the DDR4 DRAM sits below CPU cache and above storage, serving as the main-system-memory tier of computing platforms. DDR4 succeeded DDR3 with lower operating voltage (1.2V vs 1.5V), higher data rates, bank-group architecture, and improved signal integrity features such as DBI and CA parity. Key features of the H5ANAG6NCMR family include 16Gb density (2GB per chip), a 16-bit wide data interface, 1.2V core supply, 8n bank architecture with bank groups, on-die termination (ODT), DLL for precise data output timing, and JEDEC-standard DDR4 command and address signaling. The large single-chip density reduces component count in multi-DRAM systems, lowering board area and simplifying power distribution. Architecturally, the device uses SK Hynix CMOS DRAM process technology with a bank-group structure that allows faster back-to-back accesses to different bank groups, sustaining high effective bandwidth across the 16-bit bus. Speed-bin variants in the family (UH/VK/WM/XN) cover a range of DDR4 data-rate classes, letting system designers trade cost versus performance. Typical applications include desktop and notebook PC main memory, industrial PCs and embedded controllers, networking equipment line-card memory, and consumer electronics requiring large DRAM density. The industrial temperature variant suits factory automation and outdoor telecom hardware. Design considerations: DDR4 signal integrity requires length-matched fly-by routing of CK/CA lines, precise ODT calibration, and VTT termination supplied by a dedicated termination regulator. This page synthesizes distributor stock data, family drop-in variants, and practical DDR4 design notes not found in a single datasheet view.
H5ANAG6NCMR-XNI - DDR4 16Gb 3200Mbps DRAM | SK Hynix
The SK Hynix H5ANAG6NCMR-XNI is a 16Gb DDR4 SDRAM memory chip organized as 1Gx16 and operating at 3200 Mbps data rate on a 1.2 V supply, packaged in a 96-ball FBGA. It is a CMOS Double Data Rate IV synchronous DRAM designed for main-memory applications requiring high density and bandwidth. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random access memory. Within the memory hierarchy, DRAM sits above NAND flash as the primary volatile working memory of a system: the memory controller issues row and column commands over a parallel interface, and the device stores each bit as charge on a capacitor that must be periodically refreshed. DDR4 improved on DDR3 by lowering the operating voltage from 1.5 V to 1.2 V, raising data rates up to 3200 Mbps and beyond, and introducing bank groups that allow faster interleaved access. Key features of the H5ANAG6NCMR-XNI include its 16 Gbit density in a single x16 component, the -XN speed grade supporting DDR4-3200 operation, and Normal Power configuration. The x16 organization simplifies interface design for systems that use a 16-bit or 32-bit memory bus, reducing chip count compared with x8 parts at equal bus width. Architecturally, the device implements DDR4 bank-group operation, on-die termination, and standard DDR4 command timing as defined in the SK Hynix 16Gb DDR4 family datasheet. The 1.2 V core supply, together with VPP for word-line boosting, keeps power consumption low enough for dense memory subsystems while sustaining the 3200 Mbps transfer rate of the XN bin. Typical applications include industrial controllers, computing modules, embedded logging systems, firmware boot platforms, consumer electronics, and replacement sourcing for main-memory designs. Its high density suits systems needing 2 GB or more of DRAM from a small number of components. Designers should verify controller support for the DDR4-3200 timing tables, implement proper fly-by routing with VTT termination, and confirm the x16 data mask and DQS pair assignments against the FBGA-96 ball map in the manufacturer datasheet. This page synthesizes distributor inventory data, drop-in same-family alternatives, and practical DDR4 design notes not found in a single manufacturer datasheet.
H5ANAG6NCR-UHC - 16Gb DDR4 SDRAM 1Gx16 FBGA-96 | SK Hynix
The SK Hynix H5ANAG6NCR-UHC is a 16Gb (2GB) DDR4 SDRAM organized as 1Gx16, fabricated in SK hynix CMOS process and housed in a 96-ball FBGA (PBGA-96) surface-mount package for main-memory applications. According to the SK hynix 16Gb DDR4 SDRAM family datasheet, this device delivers the large density and high bandwidth required by computing and embedded platforms. DDR4 SDRAM (Double Data Rate fourth-generation synchronous DRAM) is the dominant volatile main-memory technology for servers, desktops, industrial controllers, and embedded computing modules. Within the memory hierarchy, a DDR4 SDRAM sits below the CPU cache and above storage, providing random access to working data at multi-gigabit-per-second transfer rates while requiring a memory controller to manage refresh, bank activation, and command timing. Key characteristics of this family include a 16Gbit monolithic die density, a x16 data interface that simplifies 16-bit and 32-bit memory bus designs, and DDR4 features such as bank groups, burst length 8, and on-die termination. The UHC speed suffix denotes a commercial/industrial operating-range speed grade within the H5ANAG6N family, and the C die revision is a later-generation shrink of the A-die H5ANAG6NAMR, typically offering improved power characteristics. Architecturally, the device organizes capacity into multiple banks and bank groups addressed by row and column strobes, using a 1.2V-class core supply typical of DDR4. Internal pipelining and DLL-based clocking sustain high-burst bandwidth, while DDR4 protocol features reduce command bus contention versus DDR3. Typical applications include main memory for embedded x86 and ARM computing modules, industrial controllers requiring large working memory, network appliances, data logging systems, and replacement sourcing for aging DDR4 BOMs. The x16 organization suits cost-optimized boards where a full 64-bit bus is not required. Designers should verify controller compatibility with the die revision C timing set, implement DDR4 fly-by routing with proper termination, and confirm the exact speed grade suffix against the ordering information table in the official datasheet. This page synthesizes distributor availability data, same-family drop-in variants, and practical DDR4 design guidance not consolidated in the manufacturer datasheet, with all unverified parameters explicitly flagged for engineering review.
H5ANAG6NCR-VKC - 16Gb DDR4 SDRAM x8 | SK hynix | Main Memory
The SK hynix H5ANAG6NCR-VKC is a 16Gb CMOS Double Data Rate 4 (DDR4) Synchronous DRAM organized as 2G x 8, delivering high-density main memory with JEDEC-standard DDR4 interface signaling at 1.2V, housed in a 96-ball FBGA package. DDR4 SDRAM is the fourth generation of Double Data Rate synchronous DRAM, a category of volatile main-memory ICs that store data dynamically in capacitor-based cells and must be periodically refreshed. Within the memory hierarchy it sits between CPU caches and storage devices, providing the primary working memory bandwidth for processors in servers, workstations, and embedded systems. The DDR4 generation introduced bank groups, lower operating voltage, and higher data rates than DDR3. Key features of this 16Gb monolithic die include fully synchronous operation referenced to both rising and falling edges of the clock, 8 internal banks organized into bank groups for improved effective bandwidth, and on-die termination plus DLL for signal integrity at high data rates. The VKC speed bin designation corresponds to a JEDEC-standard DDR4 data-rate grade, and the C temperature suffix indicates the commercial operating range per SK hynix part-numbering convention. Architecturally, the device multiplexes row and column addresses on shared address pins, uses burst lengths of 8 (BL8) with programmable CAS latency, and supports DDR4 features such as activate-to-activate timing management, refresh modes (1x/2x/4X), and CRC/CA parity options depending on configuration. Power consumption benefits from the 1.2V VDD/VDDQ rails versus the 1.5V of DDR3, reducing system-level power per transferred bit. Typical applications include server and workstation main memory modules (UDIMM, RDIMM, SODIMM), embedded computing boards, industrial PCs, networking equipment, and graphics or acceleration cards where large memory density and high bandwidth are required. When designing with this component, follow JEDEC DDR4 routing guidelines for fly-by address/command topology, length-matched data lanes, and reference-plane integrity; power-rail decoupling on both VDD and VDDQ domains is critical for eye-mask compliance at maximum data rate. This page synthesizes distributor availability data, same-brand drop-in speed-grade variants, and practical design notes in one reference, providing information gain beyond the raw manufacturer datasheet.
H5ANAG8NAMR-UHC - 16Gb DDR4-2400 SDRAM 2Gx8 | SK Hynix
The SK Hynix H5ANAG8NAMR-UHC is a 16Gb (2G x 8) DDR4 SDRAM DRAM component operating at DDR4-2400 data rates on a 1.2V supply, housed in a 78-ball FBGA package. It is a Memory IC used for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC-defined DDR memory family. Within the memory hierarchy, a DRAM component such as this part sits at the main-memory level of a computing system, below CPU caches and above storage. Unlike NAND flash, DRAM is volatile and requires periodic refresh, but delivers far lower random-access latency and high bandwidth, making it the standard main-memory technology from embedded controllers to servers. Key features of the H5ANAG8NAMR-UHC include a 16Gbit density organized as 2G words of 8 bits, a 2400 MT/s interface, and the reduced 1.2V core supply that distinguishes DDR4 from the 1.5V DDR3 generation. DDR4 devices also bring bank-group architecture, which interleaves four internal bank groups to raise effective data rates, plus lower operating currents per transferred bit than previous generations. Technically, this part belongs to SK Hynix DDR4 DRAM component family (the AG8N denotes 16Gb x8 organization within the A-generation die family). Speed grade and voltage class are encoded in the -UHC suffix, which corresponds to DDR4-2400 operation at 1.2V. The 78-ball FBGA (Fine-Pitch Ball Grid Array) lead-free package is the JEDEC-standard footprint shared across most 16Gb x8 DDR4 components, which simplifies second-source qualification. Interface signals include differential clocking (CK/CK#), DQS strobes for data capture, and on-die termination (ODT) to preserve signal integrity at multi-gigabit rates. Typical applications include DRAM modules and DIMMs, industrial controllers and computing modules requiring main memory, networking and communication equipment, and embedded systems performing firmware boot and data logging in volatile memory. The x8 organization suits designs that need many independent chips or ECC-enabled subsystems (8D72 configurations). A key design consideration: DDR4-2400 operation requires careful address/command bus fly-by routing, per-byte DQS trace-length matching, and correct ODT/ZQ calibration in the memory controller configuration. This page synthesizes distributor availability, drop-in alternatives, and practical DDR4 design notes not found in the manufacturer datasheet, giving engineers and buyers a single citable reference.
H5ANAG8NBJR-PBC - 16Gb DDR4 SDRAM x8, FBGA-78 | SK Hynix
The SK Hynix H5ANAG8NBJR-PBC is a 16Gb (2 GB) DDR4 SDRAM component organized as x8, operating from a 1.2 V supply in a 78-ball FBGA package (7.5 mm x 11 mm), designed for main-memory applications requiring large density and high bandwidth. The -PBC speed grade supports DDR4-2666 operation. DDR4 SDRAM is the fourth generation of double-data-rate synchronous DRAM, a form of volatile semiconductor main memory. Within the system hierarchy, DRAM sits between CPU caches and non-volatile storage, providing the high-bandwidth working memory for processors. DDR4 doubles the internal bank count of DDR3 to 16 banks (organized in 4 bank groups), adds a DBI/cyclic-redundancy-check (CRC) capability on the data bus, lowers operating voltage from 1.5 V/1.35 V to 1.2 V, and introduces bank-group architecture for improved effective bandwidth at the same clock rate. Key features of this device include 16 Gbit density, a x8 organization suited to ECC-capable and desktop/server memory arrays, 1.2 V core supply with programmable VDDQ, 8n prefetch architecture with bank-group parallelism, and on-die termination (ODT) for signal integrity at high data rates. The BJR die revision reflects SK Hynix's process refinements for yield and power. The PBC suffix encodes the speed/latency bin (DDR4-2666 class, CL19 typical module equivalence). The device uses a fly-by-terminated point-to-multipoint command/address topology per the DDR4 JEDEC-style interface, with a 1.2 V SSTL12 I/O signaling environment, DLL-based read capture, and programmable CAS latency and additive latency. Refresh includes normal 1x/2x/4x refresh modes and self-refresh for low-power retention. Typical applications include desktop and notebook UDIMM/SODIMM modules, server RDIMM and ECC-DIMM memory subsystems, industrial controllers and embedded x86/ARM boards with DDR4 memory controllers, networking and telecom line cards, and graphics/display processing platforms. Design consideration: DDR4 fly-by routing requires length-matched command/address traces with VTT termination, and the memory controller must be programmed with the correct speed bin, CL, and refresh settings from the device mode registers; always confirm the exact speed code against the SK Hynix datasheet before substitution. This page synthesizes verified distributor listings, drop-in alternatives across SK Hynix, Micron and Samsung FBGA-78 DDR4 components, and practical design notes not found in the manufacturer datasheet.
H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix
The SK hynix H5ANAG8NBJR-RDC is a 16Gb (2G x 8) CMOS Double Data Rate 4 (DDR4) Synchronous DRAM operating at 1.2V, housed in a 78-ball FBGA package. As part of SK hynix's 16Gb DDR4 SDRAM family, it delivers the large memory density and high bandwidth required by main memory subsystems in servers, workstations, and high-performance computing platforms. DDR4 SDRAM is a type of synchronous dynamic random-access memory that transfers data on both the rising and falling edges of the clock (double data rate), sitting within the hierarchy: DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 SDRAM -> memory IC -> semiconductor. DDR4 succeeded DDR3 with lower operating voltage (1.2V vs 1.5V), higher densities, bank groups, and improved signaling via DQS training and DBI (data bus inversion). Key features include fully synchronous operation referenced to both clock edges, an 8-bit-wide x8 organization with 2G addressable locations, and support for standard DDR4 features such as bank groups, CAS latency programming, and on-die termination (ODT). The -RDC speed grade ordering supports DDR4-2666-class data rates at the 1.2V VDD supply. Architecturally, the device uses a CMOS core with charge-storage DRAM cells that require periodic refresh, a hierarchical bank structure for concurrency, and a SSTL12 interface for high-speed signaling. Internal pipelining sustains full bandwidth at the rated clock while read/write CRC and CA parity options (per family datasheet) strengthen data integrity in server-class systems. Typical applications include server main memory DIMMs (RDIMM/LRDIMM/UDIMM), embedded computing modules, networking and storage controllers, and industrial or test systems requiring high-density memory. The x8 organization suits ECC-based designs where one bit-wide device per lane simplifies error correction. Design consideration: DDR4 routing requires length-matched address/command and data groups, reference voltages (VDDQ/2), and adherence to the JEDEC DDR4 signal integrity budget; fly-by routing of CA signals is standard on DIMM designs. This page synthesizes verified distributor data, drop-in SK hynix alternatives, and practical DDR4 design notes not found in a single manufacturer datasheet, providing engineers with a complete selection reference.