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製品 (657)
VNQ7004AYTR - Quad High-Side Driver, 4x 70mOhm | STMicroelectronics
The STMicroelectronics VNQ7004AYTR is a monolithic quad-channel high-side driver designed for automotive and industrial resistive, inductive, and capacitive loads. It integrates four 70 mOhm (typical) high-side switches with full protection and diagnostic features in a 28-pin PowerSSO-28 package. The device operates from a 4V to 28V supply voltage, making it suitable for 12V and 24V automotive systems. A high-side driver is a power management IC that connects a load to the positive supply rail, providing switching, protection, and diagnostic functions. It sits between the microcontroller and the load, translating low-voltage logic signals into high-current switching actions. In the power management hierarchy, a high-side driver is a type of power switch, which falls under power management ICs, which are part of the broader semiconductor category. This device integrates four such drivers in a single package, reducing board space and component count. Key features include a very low standby current of 0.5 uA (typical) for battery preservation, a wide operating voltage range of 4V to 28V, and a maximum output current of 7A per channel (limited by package thermal capability). Each channel has overcurrent, overtemperature, and short-circuit protection, with a diagnostic output that reports fault conditions via a current-sense or digital feedback pin. The device is AEC-Q100 qualified, ensuring reliability for automotive applications. The VNQ7004AYTR uses a vertical power MOSFET technology with an integrated charge pump for the high-side gate drive. This architecture allows for efficient switching with a typical on-resistance of 70 mOhm per channel, minimizing power dissipation. The device also features a dedicated current-sense output that can be used for load current monitoring, enabling precise control and fault detection in applications such as lighting, motors, and solenoids. Typical applications include automotive body control modules, interior and exterior lighting, DC motor control, and industrial PLC outputs. The device's ability to drive inductive loads with built-in freewheeling protection makes it ideal for relay and solenoid replacement. Its diagnostic capabilities allow for real-time load monitoring, improving system reliability and enabling predictive maintenance. When designing with this device, ensure adequate PCB copper area for thermal dissipation, as the PowerSSO-28 package relies on the exposed pad for heat transfer. The current-sense output should be connected to an ADC input for accurate load monitoring, and the enable pins should be controlled by the microcontroller with proper pull-down resistors to avoid unintended activation during power-up.
VNQ7008AYTR - 8-Channel High-Side Driver | STMicroelectronics
The VNQ7008AYTR is an 8-channel high-side driver from STMicroelectronics, designed for automotive and industrial applications requiring robust, protected power switching. It integrates eight power MOSFETs with advanced protection features, delivering up to 0.7 A per channel (total 5.6 A) in a compact PowerSSO-36 package. The device operates from a 4.5 V to 28 V supply, making it suitable for 12 V and 24 V systems. A high-side driver is a power management IC that switches power to a load connected to ground, providing a simple and safe interface between a microcontroller and high-current loads. It integrates the power transistor, protection circuitry, and diagnostic feedback, reducing external component count and PCB area. High-side drivers are essential in automotive body control modules, industrial PLCs, and smart lighting systems where reliable, protected switching is critical. Key features of the VNQ7008AYTR include a low quiescent current of 5 µA in standby mode, a maximum standby current of 5 µA, and a wide operating temperature range from -40°C to +150°C. Each channel has independent overcurrent, overtemperature, and short-circuit protection, with a diagnostic output for fault reporting. The device also features a 16-bit SPI interface for advanced control and diagnostics, enabling real-time monitoring of load status and fault conditions. The VNQ7008AYTR uses STMicroelectronics' VIPower M0-5 technology, which integrates the power stages with CMOS control logic on a single die. This architecture provides low on-resistance (typically 0.7 Ω per channel) and fast switching, minimizing power dissipation and enabling high-frequency PWM control. The PowerSSO-36 package offers excellent thermal performance with a thermal resistance of 40 °C/W, allowing operation at high ambient temperatures without external heatsinking. Typical applications include automotive body control modules (lighting, wipers, mirrors), industrial PLC output stages, and smart home automation systems. The SPI interface allows a microcontroller to configure each channel, read diagnostic data, and implement advanced load management strategies, making it ideal for distributed intelligence in vehicles and industrial equipment. When designing with the VNQ7008AYTR, ensure adequate PCB copper area for thermal dissipation, especially when driving multiple channels at high current. The SPI interface requires careful layout to minimize noise, and the supply voltage must be decoupled with a 100 nF ceramic capacitor close to the VCC pin. The device's protection features eliminate the need for external clamping diodes, simplifying the BOM and improving reliability.
VNQ7050AJTR - 40V 40mOhm Quad High-Side Driver | STMicroelectronics
The VNQ7050AJTR is a quad-channel high-side driver from STMicroelectronics, designed for automotive and industrial applications requiring robust, protected power switching. It integrates four independent high-side switches with a 40V maximum supply voltage and a typical on-state resistance of 40mOhm per channel, capable of delivering up to 9A per channel. The device is housed in a PowerSSO-16 package, offering a compact footprint for space-constrained PCB designs. A high-side driver is a power management IC that connects a load to the positive supply rail, providing switching, protection, and diagnostic functions. In automotive systems, high-side drivers are essential for controlling lamps, solenoids, motors, and resistive loads, replacing discrete MOSFETs and relays with a single integrated solution. The VNQ7050AJTR belongs to the VIPower M0-5 family, which is part of STMicroelectronics' extensive portfolio of smart power switches designed for harsh environments. Key features of the VNQ7050AJTR include undervoltage shutdown, overvoltage clamp, load current limitation, thermal shutdown with auto-restart, and a dedicated status output for fault detection. Each channel has an open-drain diagnostic pin that reports overcurrent, overtemperature, and other fault conditions. The device also features a very low standby current of 0.5uA, making it suitable for battery-powered applications where quiescent draw is critical. The VNQ7050AJTR uses ST's proprietary VIPower M0-5 technology, which integrates a vertical MOSFET with intelligent control circuitry on a single chip. This architecture provides fast switching, low conduction losses, and robust protection against short circuits and thermal overload. The device is AEC-Q100 qualified, ensuring reliability for automotive applications, and is RoHS compliant. Typical applications include automotive body control modules, lighting control (LED and incandescent), DC motor control, and industrial PLC outputs. The device's ability to drive inductive loads with built-in demagnetization energy handling makes it ideal for relay and solenoid replacement. In automotive lighting, the VNQ7050AJTR can drive multiple LED strings with PWM dimming, thanks to its fast switching capability. When designing with the VNQ7050AJTR, ensure adequate PCB copper area for heat dissipation, as the PowerSSO-16 package relies on the exposed pad for thermal management. The device's current limitation feature protects the load and the IC, but the designer must consider the thermal budget under continuous short-circuit conditions. Proper decoupling capacitors on the supply and careful layout of the diagnostic pins are recommended for reliable operation.
VNQ7080AJTR - Quad High-Side Driver 13.6A | STMicroelectronics | PowerSSO-16
The VNQ7080AJTR is a quad-channel smart high-side driver from STMicroelectronics, designed for automotive and industrial load-switching applications. It integrates four N-channel power MOSFETs with a 1:1 configuration, capable of delivering up to 13.6A per channel in a PowerSSO-16 package. The device operates with a very low standby current and is compatible with 3V and 5V CMOS logic outputs, making it suitable for direct microcontroller interfacing. A high-side driver is a power management IC that switches a load connected to the positive supply rail. It integrates the power switch, protection features, and diagnostic functions in a single package, simplifying PCB design and improving reliability. In the power management hierarchy, a high-side driver falls under power distribution switches, which are part of the broader category of power management ICs used in automotive body control modules, industrial PLCs, and lighting systems. Key features of the VNQ7080AJTR include a very low standby current for battery-powered applications, compatibility with 3V and 5V CMOS outputs for direct logic control, and a PowerSSO-16 package that offers a compact footprint with excellent thermal performance. The device also provides current sense analog feedback (MultiSense), enabling precise load monitoring and diagnostics. These features make it ideal for driving resistive, inductive, and capacitive loads in harsh environments. The VNQ7080AJTR uses STMicroelectronics' VIPower M0-5 technology, which integrates the power MOSFET with control and protection circuitry on a single die. This architecture provides robust protection against overcurrent, overtemperature, and short-circuit conditions, ensuring reliable operation in automotive and industrial applications. The MultiSense analog feedback allows the microcontroller to monitor load current and detect faults, enhancing system-level diagnostics. Typical applications include automotive body control modules, interior and exterior lighting, industrial PLC output stages, and DC motor control. The device's ability to handle high inrush currents and its low standby current make it particularly suitable for battery-operated systems where power efficiency is critical. When designing with the VNQ7080AJTR, ensure proper thermal management by providing adequate copper area on the PCB for heat dissipation. The PowerSSO-16 package has a thermal resistance that requires careful layout to maintain junction temperature within safe limits. Additionally, the MultiSense pin should be connected to an ADC input with appropriate filtering to achieve accurate current sensing.
VNQ7140AJTR - 40mOhm Quad High-Side Driver | STMicroelectronics
The VNQ7140AJTR is a quad-channel high-side driver from STMicroelectronics, designed for automotive and industrial loads. It integrates four 40mOhm power MOSFETs with advanced protection and diagnostic features in a PowerSSO-16 package. The device operates from a 4V to 28V supply, delivering up to 9A per channel, and is AEC-Q100 qualified for automotive applications. Data verified as of 2026-08-05. A high-side driver is a power management IC that connects a load to the positive supply rail, providing switching, protection, and diagnostic functions. It sits between the microcontroller and the load, translating low-voltage logic signals into high-current switching. In the system hierarchy, a high-side driver is a type of power switch, which falls under power management ICs, which are part of the broader semiconductor category. This device is specifically a smart high-side driver, integrating protection and diagnostics on-chip. Key features include a low ON-resistance of 40mOhm per channel, which minimizes power dissipation and supports high continuous currents. Each channel has independent overcurrent, overtemperature, and short-circuit protection, with a diagnostic output that reports fault conditions via a current-sense or digital feedback. The device also features a standby mode with very low quiescent current, making it suitable for battery-powered systems. The PowerSSO-16 package offers excellent thermal performance with an exposed pad for heat dissipation. The VNQ7140AJTR uses ST's VIPower M0-5 technology, which integrates the power MOSFET with control and protection circuitry on a single die. This architecture ensures fast and reliable switching, with a typical turn-on time of 20us and turn-off time of 30us. The device is designed to handle inductive loads, with built-in output clamping for demagnetization. It also includes a load current sense output that can be used for diagnostics or closed-loop control. Typical applications include automotive body control modules, such as driving exterior lights, interior lighting, and small motors. It is also used in industrial PLCs for driving solenoids and relays, and in smart power distribution systems. The device's wide operating voltage range and robust protection make it ideal for harsh environments. When designing with this device, ensure adequate PCB copper area for thermal dissipation, especially when driving high currents. The exposed pad should be soldered to a large ground plane. Also, consider the inrush current of capacitive loads, which may trigger overcurrent protection; a soft-start or external capacitor may be needed. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the ST datasheet, providing a comprehensive resource for engineers.
VNS1NV04D13TR - Dual OMNIFET II 40V 1.7A Low-Side Switch | STMicroelectronics
The STMicroelectronics VNS1NV04D13TR is a dual monolithic OMNIFET II fully autoprotected power MOSFET housed in a standard 8-pin SO-8 (SOIC-8) surface-mount package, integrating two independent N-channel low-side switches rated for 40V drain-to-source breakdown and 1.7A continuous channel current per device. Each switch features a 250 mOhm typical on-state resistance (RDS(on)) and is engineered for harsh automotive and industrial environments, with built-in linear current limitation, thermal shutdown, integrated active clamp, short-circuit protection, and ESD protection on the input pin. An OMNIFET II (OMNI-purpose MOSFET, second generation) is a fully protected, self-contained intelligent low-side power switch that combines the low-loss advantages of a power MOSFET with the diagnostic and protection features traditionally implemented externally. OMNIFET II devices sit within the broader category of power distribution switches, which themselves belong to the power management IC family used to drive relays, solenoids, lamps, and resistive or inductive loads in 12V and 24V systems. Key differentiating features include extremely low current draw from the logic-level input pin, automatic over-temperature and over-voltage shutdown with auto-restart, a status feedback pin that can sink current when a fault condition is detected, and a compact SO-8 footprint that allows two protected switches in the same board area previously required for a single discrete MOSFET plus protection circuitry. The active clamp absorbs inductive kickback when switching off coils, removing the need for an external freewheeling diode in most applications. The device is built on STMicroelectronics' proprietary OMNIFET II process, which co-integrates a vertical DMOS output stage with CMOS-compatible analog protection and logic blocks on the same silicon die. This co-integration eliminates parasitic wiring inductance between the MOSFET and its protection circuits, enabling faster fault response times than discrete solutions. The 3V to 5V CMOS-compatible input thresholds allow direct connection to microcontroller GPIO pins without level shifters. Typical applications include automotive body electronics such as door lock actuators, seat control motors, and lamp drivers; industrial PLC discrete outputs; relay and solenoid drivers; and any 12V/24V load-driving circuit that requires per-channel fault diagnostics. The dual-channel configuration is particularly valuable in space-constrained designs that previously required two separate protected switches. When designing with this part, ensure that the high-side of the load connects to the battery/supply rail and the low-side returns through the device's drain pin. Decouple the supply close to the source pins, and route the drain traces with adequate copper area to handle the 1.7A continuous current without exceeding the SO-8 thermal limits (typically a 2-ounce copper pour of at least 100 mm^2 per channel). This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers with a faster path from selection to PCB layout.
VNS3NV04DPTR-E - OMNIFET II 40V 3.5A Power Switch | STMicroelectronics
The STMicroelectronics VNS3NV04DPTR-E is a monolithic OMNIFET II fully autoprotected low-side power switch housed in an 8-pin SO-8 surface-mount package. Built on ST's proprietary VIPower M0-3 technology, the device integrates two OMNIFET II chips and replaces a standard Power MOSFET in DC switching applications up to 50 kHz. Key headline specifications include 40 V drain-source clamp voltage, 35 mOhm maximum on-state resistance, 3.5 A continuous drain current, and 12 A peak current capability. An OMNIFET II is a fully autoprotected N-channel power MOSFET with on-chip diagnostics and protection features. It belongs to the broader category of smart power switches, which sit hierarchically below discrete power MOSFETs and above simple load switches. By integrating clamping, current limiting, thermal shutdown, and ESD protection into a single die, OMNIFET II parts reduce PCB footprint, simplify firmware, and improve reliability versus discrete MOSFET + discrete protection designs. The VNS3NV04DPTR-E features built-in 40 V drain-source avalanche clamping, self-limiting current at typical 3.5 A, thermal shutdown with autorestart, and integrated ESD gate protection. Its 35 mOhm Rds(on) at 25 C keeps conduction losses low, while the SO-8 footprint with thermal pad enables effective heat spreading on standard 1- or 2-ounce copper. The device is qualified for automotive environments and targets replacement of standard Power MOSFETs in DC applications. Architecturally, the device combines two identical OMNIFET II half-bridge dies on one SO-8 substrate, giving the designer flexibility to wire the channels in parallel for higher current or in independent configuration for dual-load switching. The VIPower M0-3 process uses vertical DMOS with on-chip logic, allowing the part to behave as a self-contained solid-state relay. Typical applications include automotive body controllers, BCM-driven loads (lamps, motors, solenoids), industrial PLC output modules, and any 12 V or 24 V DC load switching requiring diagnostic feedback. Compared with mechanical relays, OMNIFET II provides silent switching, longer life, and built-in fault detection. Designers should add a 100 nF gate bypass and confirm heatsinking for PWM-driven loads above 1 A continuous.
ZXGD3009DYTA - 40V 1A Low-Side Gate Driver SOT-363 | Diodes Inc
The Diodes Incorporated ZXGD3009DYTA is a 40V, 1A low-side non-inverting gate driver IC housed in a 6-pin SOT-363 (SC-88) surface-mount package, designed to switch MOSFETs rapidly in high-current power-conversion stages. The device is a high-gain emitter-follower buffer that delivers typically 500 mA into a low-impedance MOSFET gate from only 10 mA of input drive current, and it provides separate source and sink outputs so turn-on and turn-off transitions can be tuned independently with external resistors. A gate driver is a specialized buffer/amplifier placed between a low-power controller (MCU, PWM IC, gate-driver logic output) and the gate of a power MOSFET, IGBT, or GaN transistor. Without such a buffer, the controller output cannot source or sink enough instantaneous current to charge and discharge the gate's Miller capacitance quickly, resulting in slow edges and high switching loss. Gate drivers sit in the broader hierarchy: gate driver -> MOSFET/IGBT driver -> power management IC -> semiconductor. Key specifications of the ZXGD3009DYTA include a wide VCC range that minimizes on-state losses, near-zero quiescent current, an emitter-follower output topology that is rugged against latch-up and shoot-through, and an optimized SOT-363 pin-out that simplifies PCB layout and reduces parasitic trace inductance. The separate Q1 (source) and Q2 (sink) outputs let the designer program asymmetric rise and fall times for EMI control or for paralleled-MOSFET sharing. The ZXGD3009DYTA's emitter-follower architecture is intrinsically simple and tolerant of wide supply rails; it avoids the cross-conduction concerns of totem-pole CMOS drivers. It is commonly used as a low-side switch driver in DC-DC converters, motor-control half-bridges, hot-swap controllers, solenoid and relay drivers, and class-D audio output stages where gate-charge slew control is critical. Typical applications include PFC boost stages, synchronous-rectifier drivers in SMPS, and high-current load switches in industrial and telecom power systems. By tailoring source and sink resistors the designer can deliberately slow the turn-on edge to control ringing or speed up the turn-off edge to minimize dead time. When designing with this part, place the gate-drive resistors as close to the Q1/Q2 pins as possible and keep the high-current gate loop area minimal to suppress parasitic inductance. Verify that the controller's logic output can swing within the driver's input common-mode range, and add a small base resistor on the input if the source impedance is too low to set a defined input current. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ZXMS6004DN8-13 - Dual 60V 1.3A Self-Protected N-FET IntelliFET | Diodes Inc
The Diodes Incorporated ZXMS6004DN8-13 is a dual self-protected low-side N-channel MOSFET IntelliFET with logic-level input, housed in an 8-pin SO (SO-8) package. Each of the two integrated FETs is rated at 60 V drain-to-source, 1.3 A continuous drain current, and a typical on-resistance of 0.5 ohm, providing robust switching for inductive loads driven by 3.3 V or 5 V microcontrollers. The device integrates over-temperature, over-current, over-voltage (active clamp), and ESD protection on the logic-level input, replacing a discrete MOSFET plus Zener-Diac clamp with a single 8-pin IC. An IntelliFET (Intelligent FET) is a self-protected low-side power switch that combines an N-channel enhancement-mode MOSFET with on-chip protection circuits in one package. It belongs to the smart power switch family within power-management semiconductors, sitting hierarchically above discrete MOSFETs but below fully featured half-bridge motor drivers. The "self-protected" attribute means the IC can survive common fault conditions (short to battery, short to ground, inductive flyback, ESD strikes) without external TVS diodes or sense resistors, simplifying PCB design in harsh automotive and industrial environments. Key features include dual independent 60 V / 1.3 A channels, 0.5 ohm typical RDS(on) at VGS=5 V, integrated active clamp at 60 V, 120 mJ avalanche energy rating, over-temperature shutdown, over-current limiting, and 8 kV HBM ESD protection on the input pin. The logic-level gate is driven directly from a 3.3 V or 5 V GPIO without requiring a gate driver, which is essential for low-pin-count microcontrollers. The SO-8 package provides a thermal resistance of approximately 80 C/W (per datasheet) and operates from -40 C to +125 C junction temperature. Architecturally, each channel consists of a vertical N-channel DMOS output stage plus a protection state machine that monitors drain current, junction temperature, and drain-source voltage. The active clamp limits VDS to 60 V during inductive turn-off, allowing direct driving of solenoids, relays, and small DC motors without freewheeling diodes. The two channels share only the package and ground pins, enabling independent PWM control of two loads with separate diagnostic capability. Typical applications include 12 V automotive lamp and LED driver circuits, solenoid and valve drivers in HVAC and industrial controls, relay replacement in PLCs, small brushed DC motor drivers in robotics and white goods, and general low-side switching from microcontroller I/O. The wide 60 V rating also tolerates 24 V industrial bus transients. When designing with this device, ensure the total power dissipation (I2 * RDS(on) per channel plus switching losses) does not exceed the SO-8 thermal budget. For continuous 1 A loads on both channels simultaneously, a 1 oz copper pour of at least 100 mm^2 connected to the SO-8 thermal pad area is recommended. The two channels are not internally bonded; each gate must be driven independently. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.