1ED3124MU12HXUMA1 vs 1ED3323MC12NXUMA1 比較
詳細な並列比較: 1ED3124MU12HXUMA1 メーカー: Infineon および 1ED3323MC12NXUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | 1ED3124MU12HXUMA1 | 1ED3323MC12NXUMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.89 | $1.25 |
| Product Type | Single-channel isolated gate driver IC | — |
| Manufacturer Family | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) | — |
| Peak Output Current (source/sink) | 14 A typical | — |
| 出力構成 | Separate source and sink pins | — |
| Galvanic Isolation (rms) | 5.7 kV (UL 1577) | — |
| Working Voltage (continuous) | 1200 V | — |
| Common-Mode Transient Immunity (CMTI) | 200 kV/us minimum | [DATA_NEEDED: CMTI in kV/us] |
| Propagation Delay (typ.) | 90 ns | — |
| UVLO Threshold | 10.5 V | — |
| Isolation Technology | Coreless transformer (CT) | Coreless Transformer (CT) |
| パッケージ | PG-DSO-8-66 (DSO-8 wide-body) | PG-DSO-16-40 |
| Creepage Distance | >8 mm | — |
| 動作温度範囲 | -40C to +125C | -40 C to +125 C |
| Target Switch Types | IGBT, power MOSFET, SiC MOSFET | — |
| Recommended Switch Class | Up to 2300 V IGBT / SiC modules | — |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | MSL2 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS ステータス | Compliant | Compliant |
| 機能 | — | Single-channel isolated gate driver |
| Isolation Voltage (Vrms) | — | 5.7 kVrms |
| Peak Source Current | — | 8.5 A |
| Peak Sink Current | — | 9 A |
| Number of Channels | — | 1 |
| Primary-Side Supply Voltage (VDD1) | — | 3.1 V to 5.5 V |
| Secondary-Side Supply Voltage (VCC2) | — | 9 V to 18 V |
| Propagation Delay (typ) | — | 85 ns |
| Protection Features | — | DESAT short-circuit, soft-off, Miller clamp, UVLO |
| Family | — | EiceDRIVER F3 Enhanced (1ED332x) |