BFU520WF vs BFU520W 比較

詳細な並列比較: BFU520WF メーカー: NXP Semiconductors および BFU520W メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

NXP Semiconductors
BFU520WF BFU520WF - NPN RF Transistor 12V 11GHz SOT323 | NXP

BFU520WF - NPN RF Transistor 12V 11GHz SOT323 | NXP

BFU520WF ✓ 生産中
NXP Semiconductors
BFU520W BFU520W - NPN 2GHz Low Noise RF Transistor | NXP

BFU520W - NPN 2GHz Low Noise RF Transistor | NXP

BFU520W ✓ 生産中

仕様比較

パラメータ BFU520WF BFU520W
ブランド NXP Semiconductors NXP Semiconductors
カテゴリ Transistors Transistors
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.22 $0.08
Polarity NPN NPN
Technology Wideband silicon RF BJT, 11 GHz fT silicon technology Silicon wideband RF BJT
Collector-Emitter Breakdown Voltage (VCEO) 12 V —
Collector-Emitter Voltage (VCEO rating) 12 V —
Maximum Collector Current (IC max) 30 mA —
Total Power Dissipation (Ptot) 450 mW [DATA_NEEDED: Ptot]
Transit Frequency (fT) 11 GHz —
Minimum Noise Figure (NFmin) 0.6 dB at 900 MHz —
Maximum Stable Gain (MSG) 18.5 dB at 900 MHz —
Application Frequency Range Up to 2 GHz Up to 2 GHz
パッケージ SOT323 (SC-70), 3-pin plastic SOT323 (3-pin plastic)
実装タイプ Surface Mount Surface Mount
Qualification AEC-Q101 qualified —
RoHS ステータス Compliant —
Family BFU5 family, small signal to medium power up to 2 GHz —
DC Current Gain (hFE) [DATA_NEEDED: hFE] [DATA_NEEDED: hFE]
動作温度範囲 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: TJ range]
Collector-Base Capacitance (Ccb) [DATA_NEEDED: Ccb] —
AEC-Q101 — Qualified
Product Family — NXP BFU5 family
Primary Use Case — High speed, low noise small-signal to medium power RF applications
コレクタ-エミッタ間電圧(Vceo) — [DATA_NEEDED: VCEO]
コレクタ-ベース間電圧(Vcbo) — [DATA_NEEDED: VCBO]
Continuous Collector Current (IC) — [DATA_NEEDED: IC]
遷移周波数(ft) — [DATA_NEEDED: fT]
Noise Figure (NF) — [DATA_NEEDED: NF]

データシート&リソース

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