BSC014NE2LSIATMA1 vs BSC010NE2LSIATMA1 比較
詳細な並列比較: BSC014NE2LSIATMA1 メーカー: Infineon および BSC010NE2LSIATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC014NE2LSIATMA1 | BSC010NE2LSIATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.48 | $0.92 |
| Technology | N-Channel MOSFET (OptiMOS 25V) | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Ta) | 33 A | — |
| Continuous Drain Current (ID, Tc) | [DATA_NEEDED: Tc condition rating] | — |
| Pulsed Drain Current (IDM, Tc) | 100 A | — |
| On-State Resistance RDS(on) | 1.4 mOhm (typ) at VGS = 10 V | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ at VGS=10V] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 74 W | — |
| 動作接合温度 | -55 °C to +150 °C | — |
| パッケージ | PG-TDSON-8-7 (SuperSO8) | PG-TDSON-8-7 (TDSON-8 EP) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series / Family | — | OptiMOS 25V |
| トランジスタタイプ | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 96 W |
| Configuration | — | Single N-Channel |
| 動作温度範囲 | — | -55C to +150C (TJ) |
| ピン数 | — | 8 |
| Gate Drive | — | Logic-level compatible |
| Rds(on) at 10V | — | [DATA_NEEDED: Rds(on) at VGS=10V] |
| Rds(on) at 4.5V | — | [DATA_NEEDED: Rds(on) at VGS=4.5V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |