BSC018N04LSGATMA1 vs IAUC100N04S6N028ATMA1 比較
詳細な並列比較: BSC018N04LSGATMA1 メーカー: Infineon および IAUC100N04S6N028ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC018N04LSGATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.52 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 6 40V |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) @ TC=25°C | 100 A | — |
| Continuous Drain Current (ID) @ TA=25°C | 30 A | — |
| Power Dissipation (PD) @ TC=25°C | 125 W | — |
| Power Dissipation (PD) @ TA=25°C | 2.5 W | — |
| RDS(on) Max @ VGS=10 V | 1.8 mΩ | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | — |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| 動作温度範囲 | -55°C to +150°C (TJ) | -55 °C to +175 °C |
| パッケージ | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8 (TDSON-8) |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | Compliant (Pb-free plating) | Compliant |
| Avalanche Tested | 100% (per datasheet) | — |
| JEDEC Qualification | Yes (qualified per JEDEC for target applications) | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 100 A |
| Pulsed Drain Current (I_DM) | — | 400 A |
| R_DS(on) max @ V_GS=10V | — | 2.8 mΩ (typical) |
| Gate Threshold Voltage (V_GS(th)) | — | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25°C | — | 62 W |
| Automotive Qualified | — | Yes |