BSC039N06NSATMA1 vs IAUC60N04S6L039ATMA1 比較
詳細な並列比較: BSC039N06NSATMA1 メーカー: Infineon および IAUC60N04S6L039ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC039N06NSATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.46 | $0.72 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| トランジスタタイプ | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA | 19 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value at TC] | — |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Power Dissipation at TA (PD) | 2.5 W | — |
| Power Dissipation at TC (PD) | 69 W | — |
| 動作接合温度 | -55C to +150C | -55C to +175C |
| パッケージ | PG-TDSON-8-6 (TDSON EP, 5x6 mm) | PG-TDSON-8 (SSO8) 5x6 mm |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 8 | — |
| Gate Drive Voltage (VGS) | ±20 V max | — |
| Technology | OptiMOS 5 (TrenchFET-style) | OptiMOS 6 (trench) |
| MSLレベル | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS ステータス | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 60 A |
| Pulsed Drain Current (I_DM) | — | 240 A |
| R_DS(on) max @ V_GS=10V | — | 3.9 milliohm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P_D) | — | 42 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Rated | — | Yes (100% avalanche tested) |