BSC0504NSIATMA1 vs BSC014N06NSATMA1 比較
詳細な並列比較: BSC0504NSIATMA1 メーカー: Infineon および BSC014N06NSATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC0504NSIATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.00 | $0.89 |
| トランジスタタイプ | N-channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage | 30 V | — |
| Continuous Drain Current at Ta | 21 A | — |
| Continuous Drain Current at Tc | 72 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Technology Family | OptiMOS 5 | — |
| パッケージ | PG-TDSON-8-6 | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 8 pins | — |
| Exposed Pad | Yes, according to distributor package description | — |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| ゲートしきい値電圧 | [DATA_NEEDED: gate threshold voltage] | — |
| 熱抵抗 | [DATA_NEEDED: thermal resistance] | — |
| 動作温度範囲 | [DATA_NEEDED: operating temperature range] | -55C to +150C |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| RoHS ステータス | unknown | Compliant |
| Lead-Free Status | unknown | — |
| Halogen-Free Status | unknown | — |
| REACH Status | unknown | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID) at Ta | — | 30 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Typ @ VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.45 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 156 W |
| MSLレベル | — | 1 |
| Technology | — | OptiMOS 5 (shielded-gate trench) |