BSC093N15NS5ATMA1 vs IQD005N04NM6CGATMA1 比較
詳細な並列比較: BSC093N15NS5ATMA1 メーカー: Infineon および IQD005N04NM6CGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC093N15NS5ATMA1 | IQD005N04NM6CGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.83 | $1.62 |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 5 150V | OptiMOS 6 (trench FET) |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at TC | 87 A | — |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | 9.3 mΩ | — |
| Power Dissipation (PD) at TC | 139 W | — |
| パッケージ | SuperSO8 5x6 (PG-TDSON-8-7) | PG-TTFN-9-U02 (Source-Down 5x6 mm²) |
| 実装タイプ | Surface Mount | Surface Mount |
| Gate Drive Voltage (VGS) Recommended | 10 V | — |
| 動作温度範囲 | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C (TJ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| ハロゲンフリー | [DATA_NEEDED: halogen free status] | — |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| RDS(on) Typical | — | 0.5 mΩ |
| Continuous Drain Current (ID) at Ta | — | 58 A |
| Continuous Drain Current (ID) at Tc | — | 610 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed rating] |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 333 W |
| ピン数 | — | 9 |
| Lead-Free | — | Yes |
| Source Configuration | — | Source-Down (bottom-side source for PCB heatsinking) |