BSC120N03LSGATMA1 vs BSC050N03LSGATMA1 比較
詳細な並列比較: BSC120N03LSGATMA1 メーカー: Infineon および BSC050N03LSGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC120N03LSGATMA1 | BSC050N03LSGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.36 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 12 A | — |
| Continuous Drain Current (ID) at Tc=25C | 39 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-State Resistance RDS(on) at VGS=10V | 12 mOhm (typical) | — |
| On-State Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 28 W | — |
| 動作温度範囲 | -55C to +150C (TJ) | -55 C to +150 C |
| パッケージ | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | 1 (per JEDEC J-STD-020) | 1 |
| RoHS ステータス | Compliant | Compliant |
| Part Number | — | BSC050N03LSGATMA1 |
| Technology | — | OptiMOS 3 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 80 A |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| On-State Resistance (RDS(on)) Max at VGS=10V | — | 5 mOhm |
| Power Dissipation (PD) at Tc | — | 50 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Channel Type | — | N-Channel |