BSC123N08NS3GATMA1 vs BSC042NE7NS3GATMA1 比較
詳細な並列比較: BSC123N08NS3GATMA1 メーカー: Infineon および BSC042NE7NS3GATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC123N08NS3GATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.71 | $1.24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| Channel Type | N-Channel | — |
| Configuration | Single with built-in body diode | — |
| Maximum Drain-Source Voltage (VDS) | 80 V | — |
| Maximum Continuous Drain Current (ID, Tc) | 55 A | — |
| Maximum Continuous Drain Current (ID, Ta) | 11 A | — |
| Maximum Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | — |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm | — |
| Maximum Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (Tc) | 66 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| 動作接合温度 | -55C to +150C | — |
| パッケージ | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | 1 (per JEDEC J-STD-020) | 1 |
| RoHS ステータス | Compliant with exemption | Compliant |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Part Number | — | BSC042NE7NS3GATMA1 |
| トランジスタタイプ | — | N-Channel MOSFET |
| Technology | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at Ta | — | 19 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| 動作温度範囲 | — | -55C to +150C |