BSC265N10LSFGATMA1 vs BSC100N10NSFGATMA1 比較
詳細な並列比較: BSC265N10LSFGATMA1 メーカー: Infineon および BSC100N10NSFGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 ✓ 生産中Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ 生産中仕様比較
| パラメータ | BSC265N10LSFGATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.72 | $1.49 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 40 A | — |
| Continuous Drain Current (ID, Ta) | 6.5 A | — |
| Power Dissipation (PD, Tc) | 78 W | — |
| Technology | OptiMOS 2 (TrenchFET) | MOSFET (Metal Oxide) |
| パッケージ | PG-TDSON-8-1 (TDSON-8) | PG-TDSON-8-1 (SuperSO8 5x6) |
| 実装タイプ | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | [DATA_NEEDED: typical VGS(th) value] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total at VGS=10V] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| 動作温度範囲 | -55 C to +150 C (junction) | -55C to +150C (junction) |
| MSLレベル | 1 (per JEDEC J-STD-020) | — |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| Series | OptiMOS 2 | OptiMOS |
| Manufacturer | — | Infineon Technologies |
| Continuous Drain Current (ID), Ta | — | 11.4 A |
| Continuous Drain Current (ID), Tc | — | 90 A |
| Power Dissipation (PD), Tc | — | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | — | 10 mΩ |
| Gate Drive Voltage (recommended) | — | 10 V (for rated RDS(on)) |