BSP135H6906XTSA1 vs BSO613SPVGXUMA1 比較
詳細な並列比較: BSP135H6906XTSA1 メーカー: Infineon および BSO613SPVGXUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSP135H6906XTSA1 | BSO613SPVGXUMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $0.98 |
| FET Type | N-Channel Depletion Mode | P-Channel |
| Drain-Source Voltage (VDS) Max | 600 V | — |
| Continuous Drain Current (ID) at TA=25C | 120 mA | -3.44 A |
| RDS(on) Max at VGS=0V | 45 Ohm | — |
| Power Dissipation (PD) Max | 1.8 W | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(off)) | Depletion mode (normally-on) | — |
| 動作温度範囲 | -55C to +150C | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) |
| パッケージ | PG-SOT223-4 (SOT-223, 3+tab) | PG-DSO-8-6 (Power-SO-8) |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 4 (3 leads + drain tab) | 8 (6 active, 2 thermal/NC) |
| Technology | SIPMOS (planar high-voltage) | OptiMOS (Trench) |
| MSLレベル | 1 (unlimited) | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) |
| RoHS ステータス | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per datasheets.com parametric record) | — |
| Lead-Free | Yes | Yes |
| Drain-Source Voltage (VDS) | — | -60 V |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) max at VGS=4.5V] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max +/-V] |
| Avalanche Rated | — | Yes (per Infineon OptiMOS family) |