BSP88H6327XTSA1 vs BSS205NH6327XTSA1 比較
詳細な並列比較: BSP88H6327XTSA1 メーカー: Infineon および BSS205NH6327XTSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSP88H6327XTSA1 | BSS205NH6327XTSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.21 | $0.12 |
| トランジスタタイプ | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | — |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | — |
| パッケージ | PG-SOT223-4 (SOT-223-3) | PG-SOT23 (SC-59, TO-236-3), 3-pin |
| 実装タイプ | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | — |
| Configuration | Single | — |
| 動作温度 | -55 C to +150 C | — |
| Technology | SIPMOS (planar enhancement mode) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead Plating | Pb-free | Pb-free |
| RoHS Compliance | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: MSL level] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain Tab Connection | SOT-223 tab is drain | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS205NH6327XTSA1 |
| Drain-Source Voltage V<sub>DS</sub> | — | 20 V |
| Continuous Drain Current I<sub>D</sub> (Ta) | — | 2.5 A |
| Power Dissipation P<sub>D</sub> (Ta) | — | 500 mW |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) | — | 85 mΩ |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vgs(th) typical value] |
| 動作温度範囲 | — | -55 °C to +150 °C (junction) |
| Gate Drive Voltage | — | Logic-level compatible |
| Qualification | — | AEC-Q101 |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020) |
| Packaging | — | Tape & Reel (H6327) |