BSS816NWH6327XTSA1 vs BSS806NEH6327XTSA1 比較
詳細な並列比較: BSS816NWH6327XTSA1 メーカー: Infineon および BSS806NEH6327XTSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSS816NWH6327XTSA1 | BSS806NEH6327XTSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.14 | $0.14 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | BSS816NW (OptiMOS 2 Small-Signal) | — |
| トランジスタタイプ | MOSFET, N-Channel | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 20 V | 20 V (maximum) |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| RDS(on) max @ VGS=4.5V | 160 mOhm | — |
| RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | — |
| Power Dissipation (PD) at TA=25C | 500 mW | — |
| 動作温度範囲 | -55C to +150C | [DATA_NEEDED: operating temperature range] |
| パッケージ | SOT-323 (PG-SOT323), 3-pin | PG-SOT23 (SOT-23-3) |
| 実装タイプ | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| Technology | OptiMOS 2 trench MOSFET | — |
| ESD Protection | Yes (integrated, per Infineon datasheet) | — |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| MSLレベル | 1 | — |
| Part Number | — | BSS806NEH6327XTSA1 |
| Mode of Operation | — | Enhancement-mode |
| Continuous Drain Current (ID) | — | 2.3 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-Resistance RDS(on) | — | 57 mOhm (maximum) |
| ピン数 | — | 3 (Gate, Drain, Source) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Yes (compliant) |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |