BSZ900N20NS3GATMA1 vs IRL40S212ARMA1 比較
詳細な並列比較: BSZ900N20NS3GATMA1 メーカー: Infineon および IRL40S212ARMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSZ900N20NS3GATMA1 | IRL40S212ARMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.48 | $2.31 |
| Part Number | BSZ900N20NS3GATMA1 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | StrongIRFET™ (planar N-channel) |
| Drain-Source Voltage (VDS) | 200 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 15.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | 90 mΩ | — |
| Typical RDS(on) @ VGS=10V | 77 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th) typ) | 3.5 V | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD, Tc=25C) | 62.5 W | — |
| 動作接合温度 | -55C to +150C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| パッケージ | PG-TSDSON-8 (TDSON-8 FL) | PG-TO263-3 (D2PAK) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | 1 (unlimited) | 1 (unlimited) |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| ESD Protection | Yes (integrated) | — |
| Avalanche Energy Rated | Yes (EAS) | — |
| Part Family | — | StrongIRFET™ |
| トランジスタタイプ | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 195 A |
| On-Resistance (RDS(on)) | — | 1.9 mOhm max |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (PD, Tc) | — | 231 W |
| 動作温度範囲 | — | [DATA_NEEDED: Tj max] |
| Lead-Free | — | Yes |