IAUC100N04S6L025ATMA1 vs IAUC100N04S6L020ATMA1 比較
詳細な並列比較: IAUC100N04S6L025ATMA1 メーカー: Infineon および IAUC100N04S6L020ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 ✓ 生産中仕様比較
| パラメータ | IAUC100N04S6L025ATMA1 | IAUC100N04S6L020ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.62 | $0.86 |
| Technology | OptiMOS 6 40V trench MOSFET | OptiMOS 6 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Power Dissipation (PD) at TC=25C | 62 W | — |
| 動作接合温度 | -55 C to +175 C | — |
| パッケージ | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8 (SS08, 5x6 mm leadless) |
| 実装タイプ | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| MSLレベル | 1 (per JEDEC J-STD-020) | — |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 40 V |
| Continuous Drain Current (Tc) | — | 100 A |
| Power Dissipation (Tc) | — | 75 W |
| RDS(on) Maximum @ VGS=10V, ID=50A | — | 2.04 mΩ |
| RDS(on) Typical | — | 2.0 mΩ |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) Typical | — | 2.0 V |
| 動作温度範囲 | — | -55 °C to +175 °C (TJ) |
| Qualification | — | Automotive grade |
| Packaging | — | Tape & Reel (TMA1) |