IAUC60N04S6L030HATMA1 vs IAUC120N04S6N009ATMA1 比較
詳細な並列比較: IAUC60N04S6L030HATMA1 メーカー: Infineon および IAUC120N04S6N009ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 ✓ 生産中仕様比較
| パラメータ | IAUC60N04S6L030HATMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.94 | $1.60 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 6 | — |
| Configuration | Half-Bridge (2 N-Channel) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TJ | 60 A | — |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | — |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | — |
| Output Capacitance (Coss) | 2.128 nF | — |
| Reverse Transfer Capacitance (Crss) | 596 pF | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Maximum Power Dissipation (PD) at TC | 75 W | — |
| 動作接合温度 | -55 C to +175 C | -55 °C to +175 °C |
| パッケージ | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | PG-TDSON-8-33 (5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | AEC-Q101 |
| RoHS ステータス | Compliant | — |
| MSLレベル | 1 (per JEDEC J-STD-020) | 1 |
| Part Family | — | OptiMOS 6 40V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 120 A |
| パルスドレイン電流 | — | [DATA_NEEDED: pulsed I_D value] |
| R_DS(on) max @ V_GS=10V | — | 0.9 mΩ |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: V_GS(th) typical value] |
| Total Gate Charge Q_g typ | — | [DATA_NEEDED: Q_g typical] |
| Power Dissipation (Tc) | — | 150 W |
| Thermal Resistance R_thJC max | — | 1.0 K/W |
| RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes (per Infineon product page) |