IAUCN04S7N015GATMA1 vs IAUCN04S7L014ATMA1 比較
詳細な並列比較: IAUCN04S7N015GATMA1 メーカー: Infineon および IAUCN04S7L014ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUCN04S7N015GATMA1 | IAUCN04S7L014ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.21 | $1.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) | 165 A (Tc) | — |
| Power Dissipation (P_D) | 96 W (Tc) | — |
| R_DS(on) max | 1.53 mΩ at V_GS=10 V | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| パッケージ | PG-THSOG-4-1 (SSO4G 5x6) surface mount | PG-TDSON-8-34 (TDSON EP, 8-pin) |
| 動作接合温度 | -55C to +175C | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| RoHS ステータス | Compliant | Compliant |
| 実装タイプ | Surface Mount (IMS-compatible source-down) | Surface Mount |
| MSLレベル | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Series | — | OptiMOS 5 40V Automotive |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) | — | 120 A |
| On-Resistance RDS(on) Max | — | 1.43 mΩ |
| ゲートしきい値電圧 | — | [DATA_NEEDED: Gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Total gate charge Qg] |
| Power Dissipation (Pd) | — | [DATA_NEEDED: Power dissipation Pd] |
| 動作温度範囲 | — | -55°C to +175°C (typical automotive MOSFET range) |
| Qualification | — | AEC-Q101 (Automotive) |
| Configuration | — | Single N-Channel MOSFET |