IAUCN04S7N027GATMA1 vs IAUC120N04S6N010ATMA1 比較
詳細な並列比較: IAUCN04S7N027GATMA1 メーカー: Infineon および IAUC120N04S6N010ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUCN04S7N027GATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.72 | $0.68 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds max) | 40 V | — |
| Continuous Drain Current (Id) | 117 A | — |
| On-Resistance (Rds(on) max) | 2.67 mOhm | — |
| Power Dissipation (Pd) | 70 W (Tc) | — |
| パッケージ / ケース | PG-THSOG-4-1 (SSO4G 5x6) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Qualification | Automotive | — |
| 動作温度範囲 | [DATA_NEEDED: operating temperature range] | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Gate-Source Voltage Max (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: MSL] | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Substrate Compatibility | IMS substrates and legacy FR-4 | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Technology | — | OptiMOS 6 |
| パッケージ | — | PG-TDSON-8-34 (5x6 mm leadless) |
| Automotive Qualification | — | AEC-Q101 |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |