IAUZN04S7L025ATMA1 vs IAUCN04S7N019GATMA1 比較
詳細な並列比較: IAUZN04S7L025ATMA1 メーカー: Infineon および IAUCN04S7N019GATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ 生産中仕様比較
| パラメータ | IAUZN04S7L025ATMA1 | IAUCN04S7N019GATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.89 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-7 | OptiMOS 7 |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum] | — |
| Continuous Drain Current (ID) at TC=25C | 117 A | — |
| Continuous Drain Current (ID) at TA | 60 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | — |
| RDS(on) Max at VGS=10V | 2.56 mΩ | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25C | 65 W | — |
| 動作接合温度 | -55C to +175C | — |
| パッケージ | PG-TSDSON-8-44 (S3O8) | PG-THSOG-4-1 (SSO4G 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| AEC-Q100 Qualification | Qualified (automotive grade) | — |
| RoHS Compliance | Compliant | — |
| MSLレベル | [DATA_NEEDED: MSL rating] | — |
| Typical Applications | Synchronous rectification, hot-swap, OR-ing, motor drive | — |
| トランジスタタイプ | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tj) | — | 147 A |
| On-Resistance RDS(on) typical | — | 1.95 mOhm |
| Maximum Power Dissipation (Tc) | — | 81 W |
| Substrate Compatibility | — | IMS substrates and legacy PCB |
| Automotive Qualification | — | AEC-Q101 (per family datasheet) |
| RoHS ステータス | — | Compliant |
| Lead-Free | — | Yes |
| Tape and Reel Packaging | — | Yes (per ATMA1 suffix) |
| 動作温度範囲 | — | [DATA_NEEDED: junction temperature range from datasheet] |