IPB021N10NM5LF2ATMA1 vs IPB025N10N3GATMA1 比較
詳細な並列比較: IPB021N10NM5LF2ATMA1 メーカー: Infineon および IPB025N10N3GATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 ✓ 生産中仕様比較
| パラメータ | IPB021N10NM5LF2ATMA1 | IPB025N10N3GATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.75 | $3.74 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 5 Linear FET 2 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 176 A | — |
| Continuous Drain Current (I_D) at T_A=25°C | 30 A | — |
| R_DS(on) Maximum | 2.1 mΩ | — |
| Gate-Source Voltage (V_GS) Maximum | ±20 V [DATA_NEEDED: absolute max rated V_GS] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | — |
| Power Dissipation (P_D) at T_C=25°C | 375 W | — |
| Power Dissipation (P_D) at T_A=25°C | 3.8 W | — |
| 動作温度範囲 | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] | -55C to +175C (junction) |
| パッケージ | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | PG-TO263-7 (D2PAK-7) 6+Tab |
| 実装タイプ | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | — |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | OptiMOS 3 trench MOSFET |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | 1 (unlimited) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Power Dissipation (PD) at Tc | — | 300 W |
| RDS(on) Typical at VGS=10V, ID=100A | — | 2.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.5 V |
| Input Capacitance (Ciss) | — | 2.58 nF |
| Gate Charge (Qg) Typical | — | [DATA_NEEDED: Qg value] |
| ハロゲンフリー | — | Yes |