IPB081N06L3GATMA1 vs IPB021N10NM5LF2ATMA1 比較
詳細な並列比較: IPB081N06L3GATMA1 メーカー: Infineon および IPB021N10NM5LF2ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPB081N06L3GATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.95 | $2.75 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| トランジスタタイプ | N-Channel MOSFET | — |
| パッケージ | PG-TO263-3 (D2PAK) | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 1.2 V min, 2.1 V typ, 2.6 V max | — |
| On-Resistance RDS(on) at VGS=10V | 8.1 mOhm typical | — |
| Maximum Power Dissipation (Pd) at Tc=25C | 79 W | — |
| 動作温度範囲 | -55 C to +175 C (junction) | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 3 | — |
| Pin Configuration | Gate / Drain / Source (D2PAK standard) | — |
| Technology | OptiMOS 3 (low-voltage power MOSFET) | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 (unlimited) | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| Part Family | — | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 176 A |
| Continuous Drain Current (I_D) at T_A=25°C | — | 30 A |
| R_DS(on) Maximum | — | 2.1 mΩ |
| Gate-Source Voltage (V_GS) Maximum | — | ±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25°C | — | 375 W |
| Power Dissipation (P_D) at T_A=25°C | — | 3.8 W |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | — | 10 V, 15 V |