IPB35N10S3L26ATMA1 vs IPB35N10S3L26ATMA2 比較
詳細な並列比較: IPB35N10S3L26ATMA1 メーカー: Infineon および IPB35N10S3L26ATMA2 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPB35N10S3L26ATMA1 | IPB35N10S3L26ATMA2 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.15 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T | OptiMOS Power-Transistor |
| Channel Type | N-Channel | — |
| Maximum Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC | 35 A | — |
| Power Dissipation (PD) at TC | 71 W | — |
| Package Type | PG-TO263-3 (D2PAK-2) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 3 (Gate, Drain, Source) | — |
| Channel Mode | Enhancement | — |
| RDS(on) (typical per Infineon product page) | 26.3 mΩ | — |
| Typical Gate Charge Qg @ Vgs | 80 nC | — |
| Maximum Drain-Source Resistance Rds | 1.7 mΩ (per RS Components listing) | — |
| Minimum Operating Temperature | -55 C | — |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | Compliant |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 qualification status] | — |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tc | — | 35 A |
| パルスドレイン電流 | — | 180 A |
| Power Dissipation (Pd) at Tc | — | 71 W |
| RDS(on) (typical) | — | 26.3 mOhm |
| パッケージ | — | PG-TO263-3-2 (D2PAK) |
| 動作温度範囲 | — | -55C to +175C |
| ピン数 | — | 3 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Automotive Qualified | — | Yes (per Infineon product page classification) |