IPD082N10N3GATMA1 vs IPD30N10S3L34ATMA2 比較
詳細な並列比較: IPD082N10N3GATMA1 メーカー: Infineon および IPD30N10S3L34ATMA2 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ 生産中仕様比較
| パラメータ | IPD082N10N3GATMA1 | IPD30N10S3L34ATMA2 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.14 | $0.92 |
| Part Number | IPD082N10N3GATMA1 | — |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 3 (Trench N-Channel) | OptiMOS-T (trench) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ Tc=25°C | 80 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) @ Tc=25°C | 125 W | — |
| 動作接合温度 | -55°C to +175°C | -55 C to +175 C |
| パッケージ / ケース | PG-TO252-3 (DPAK), surface mount | — |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 3 (Gate, Drain, Source) | — |
| RoHS ステータス | Compliant | Compliant |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | — |
| Lead-Free | Yes | — |
| MSLレベル | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D, Tc) | — | 30 A |
| Pulsed Drain Current (I_DM) | — | 180 A |
| Power Dissipation (P_D, Tc) | — | 57 W |
| R_DS(on) max at V_GS=10V | — | 31 mOhm (typ) |
| Gate Threshold Voltage V_GS(th) max | — | 2.4 V |
| Total Gate Charge (Qg) max | — | 31 nC |
| Package / Supplier Device Package | — | PG-TO252-3-11 (DPAK) |
| Pin / Tab Count | — | 3 (2 + Tab) |
| Automotive Qualification | — | AEC-Q101 |