IPD35N10S3L26ATMA1 vs IPD30N06S2L13ATMA4 比較

詳細な並列比較: IPD35N10S3L26ATMA1 メーカー: Infineon および IPD30N06S2L13ATMA4 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Infineon
IPD35N10S3L26ATMA1 IPD35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon

IPD35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon

IPD35N10S3L26ATMA1 ✓ 生産中
Infineon
IPD30N06S2L13ATMA4 IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon

IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon

IPD30N06S2L13ATMA4 ✓ 生産中

仕様比較

パラメータ IPD35N10S3L26ATMA1 IPD30N06S2L13ATMA4
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.81 $0.48
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD35N10S3L26ATMA1 —
Technology OptiMOS-T (N-channel enhancement mode trench MOSFET) Planar (OptiMOS)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 35 A —
Pulsed Drain Current (IDM) 180 A —
On-Resistance RDS(on) max at VGS=10 V 26 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 1.7 V —
Continuous Power Dissipation (PD) at TC=25°C 71 W —
動作接合温度 -55°C to +175°C —
パッケージ PG-TO252-3-11 (DPAK-2) PG-TO252-3-11 (DPAK)
実装タイプ Surface Mount Surface Mount
MSLレベル MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Avalanche Tested 100% avalanche tested 100 % production-tested
RoHS / Halogen-Free RoHS compliant, Green product (halogen-free) —
Typical Gate Charge (Qg) [DATA_NEEDED: typical Qg from datasheet] —
Part Family — OptiMOS
Channel Type — N-Channel
Mode — Enhancement
Drain-Source Voltage (Vds) — 55 V
Continuous Drain Current (Id) — 30 A (Tc)
Power Dissipation (Pd) — 136 W (Tc)
動作温度 — -55 °C to +175 °C (Tj)
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow)
Lead-Free / RoHS — Yes (Green Package)
On-State Resistance (Rds(on)) — [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V]
Gate-Source Threshold (Vgs(th)) — Logic-level (typ [DATA_NEEDED: Vth typ/min/max])
Total Gate Charge (Qg) — [DATA_NEEDED: Qg @ Vgs=10V, Id=30A]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typ at Vds=25V]
Diode Reverse Recovery (trr) — [DATA_NEEDED: trr typ]
ピン数 — 3 (Drain tab + Gate + Source)
Tape and Reel Packaging — Yes (T&R per IEC 60286-3)

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