IPD60R210PFD7SAUMA1 vs IPB60R165CPATMA1 比較
詳細な並列比較: IPD60R210PFD7SAUMA1 メーカー: Infineon および IPB60R165CPATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon
IPD60R210PFD7SAUMA1 ✓ 生産中Infineon
IPB60R165CPATMA1 - 600V 165mΩ CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 ✓ 生産中仕様比較
| パラメータ | IPD60R210PFD7SAUMA1 | IPB60R165CPATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.54 | $1.78 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS PFD7 | — |
| Technology | Superjunction (CoolMOS) N-Channel Power MOSFET | CoolMOS CP (superjunction, N-Channel) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc) | 16 A | — |
| On-Resistance (RDS(on), max) | 210 mOhm | — |
| Power Dissipation (Ptot, Tc=25C) | 64 W | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | 3.5 V |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Package Type | TO-252 (DPAK) | — |
| Manufacturer Package Designator | PG-TO252-3-344 | — |
| 実装タイプ | Surface Mount (SMT) | Surface Mount |
| Pin Configuration | 3-Pin (2+Tab) - Gate, Drain (tab), Source | — |
| 動作温度範囲 | -55C to +150C (TJ) | — |
| Lead-Free / RoHS | Yes (compliant) | — |
| Application Segment | Consumer-grade SMPS | — |
| Continuous Drain Current (ID, Tc=25°C) | — | 21 A |
| Power Dissipation (PD, Tc=25°C) | — | 192 W |
| On-Resistance RDS(on), max (VGS=10V) | — | 165 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Total Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typical value] |
| Operating Temperature Range (TJ) | — | -55°C to +150°C |
| パッケージ | — | PG-TO263-3-2 (D2PAK-2) |
| RoHS ステータス | — | Compliant (Pb-free lead plating) |
| JEDEC Qualification | — | Qualified per JEDEC for target applications |
| dv/dt Ruggedness | — | Extreme dv/dt rated |
| Polarity / Channel | — | N-Channel |