IPD60R380C6ATMA1 vs IPD60R145CFD7ATMA1 比較

詳細な並列比較: IPD60R380C6ATMA1 メーカー: Infineon および IPD60R145CFD7ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Infineon
IPD60R380C6ATMA1 IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon

IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon

IPD60R380C6ATMA1 ✓ 生産中

仕様比較

パラメータ IPD60R380C6ATMA1 IPD60R145CFD7ATMA1
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.41 $1.05
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction CoolMOS CFD7 (superjunction)
FET Type N-Channel N-Channel
パッケージ PG-TO252-3 (DPAK) TO-252AA (DPAK) surface mount
実装タイプ Surface Mount Surface Mount (DPAK, 3-pin + tab)
MSLレベル [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
RoHS ステータス Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
Body Diode — Integrated fast body diode (low Q<sub>rr</sub>)
動作温度 — -55C to +150C (junction)
ピン数 — 3 (Gate, Drain, Source)
Series — CoolMOS CFD7
Target Application — ZVS / LLC resonant converters, soft switching

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