IPP075N15N3GXKSA1 vs IPP069N20NM6AKSA1 比較

詳細な並列比較: IPP075N15N3GXKSA1 メーカー: Infineon および IPP069N20NM6AKSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Infineon
IPP075N15N3GXKSA1 IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon

IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon

IPP075N15N3GXKSA1 ✓ 生産中

仕様比較

パラメータ IPP075N15N3GXKSA1 IPP069N20NM6AKSA1
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $1.92 $4.10
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) OptiMOS 6 trench MOSFET
Drain-Source Voltage (VDS) 150 V 200 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
パッケージ PG-TO220-3 (TO-220 through-hole) PG-TO220-3-1 (TO-220-3 through-hole, 3+tab)
実装タイプ Through Hole Through Hole
動作温度範囲 [DATA_NEEDED: junction operating temperature range] -55C to +175C
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 136 A
Continuous Drain Current (ID) at TA=25C — 15.3 A
Power Dissipation (PD) at TC=25C — 300 W
Power Dissipation (PD) at TA=25C — 3.8 W
On-Resistance RDS(on) max at VGS=10V — 6.9 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Total Gate Charge at VGS=10V (Qg) — [DATA_NEEDED: Qg value]
RoHS ステータス — Compliant
Lead-Free — Yes
MSLレベル — N/A (through-hole package)
Tab Connection — Electrically connected to Drain

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