IPT026N10N5ATMA1 vs IPC100N04S5L1R5ATMA1 比較
詳細な並列比較: IPT026N10N5ATMA1 メーカー: Infineon および IPC100N04S5L1R5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPT026N10N5ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.87 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS-5 40 V |
| トランジスタタイプ | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 202 A | — |
| Continuous Drain Current (ID, Ta) | 27 A | — |
| Maximum RDS(on) at VGS=10V | 2.6 mΩ | — |
| Maximum Power Dissipation (Tc=25°C) | 214 W | — |
| パッケージ | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-34 (SS08 leadless) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55 °C to +175 °C (TJ) | -55C to +175C |
| Configuration | Single with built-in diode | — |
| Number of Terminals | 8 | — |
| Technology | Trench (OptiMOS 5) | — |
| RoHS ステータス | Compliant | Compliant (Green Product) |
| MSLレベル | [DATA_NEEDED: MSL rating] | MSL1 (260C peak reflow) |
| Gate Charge (Qg typ) | [DATA_NEEDED: typical Qg] | — |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% |