IQD009N06NM5SCATMA1 vs IQE036N08NM6CGATMA1 比較
詳細な並列比較: IQD009N06NM5SCATMA1 メーカー: Infineon および IQE036N08NM6CGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IQD009N06NM5SCATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.42 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 5 60V (IQD009N06NM5) | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Ta=25C) | 42 A | — |
| Pulsed Drain Current (IDM, Tc) | 445 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 0.9 mOhm | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS abs max, typical +/-20V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| パッケージ | PG-WHSON-8-U02 (PQFN 5x6 mm) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | [DATA_NEEDED: Tj min/max] | -55 C to +175 C (junction, Tj) |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: MSL classification] | MSL1 (per JEDEC J-STD-020) |
| Tape and Reel Packaging | Yes (suffix SCATMA1) | — |
| Product Family | — | OptiMOS 6 |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Technology | — | Trench MOSFET, OptiMOS 6 |
| Configuration | — | Single N-channel, Source-Down |