IRF3205ZSTRLPBF vs IRLB4132PBF 比較
詳細な並列比較: IRF3205ZSTRLPBF メーカー: Infineon および IRLB4132PBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF3205ZSTRLPBF | IRLB4132PBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.45 | $0.62 |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET) | — |
| Drain-Source Voltage (VDS) | 55 V | 30 V |
| Continuous Drain Current (ID) at Tc=25C | 110 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 6.5 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | 76 nC | — |
| Power Dissipation (PD) at Tc=25C | 170 W | — |
| 動作接合温度 | -55C to +175C | — |
| パッケージ | D2PAK (TO-263) | — |
| 実装タイプ | Surface Mount | Through Hole |
| Packaging | Tape & Reel (left reel) | — |
| RoHS ステータス | Compliant | — |
| MSLレベル | 1 | — |
| Body Diode | Avalanche-rated intrinsic | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| トランジスタタイプ | — | N-Channel MOSFET (HEXFET) |
| Continuous Drain Current (ID, Tc=25C) | — | 78 A |
| Maximum Power Dissipation (PD, Tc=25C) | — | 140 W |
| On-Resistance (RDS(on), VGS=10V) | — | 3.5 mOhm (typical) |
| On-Resistance (RDS(on), VGS=4.5V) | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th), typical) | — | 1.0 V to 2.5 V |
| Gate Charge (Qg, typical) | — | [DATA_NEEDED: total gate charge] |
| Maximum Junction Temperature | — | 175 C |
| 動作温度範囲 | — | -55 C to +175 C |
| パッケージ / ケース | — | TO-220AB (through-hole, 3 leads) |
| Lead-Free / RoHS | — | Yes (Pb-free PBF suffix) |
| AEC-Q101 Automotive Qualification | — | Not qualified (industrial/commercial) |