IRF5305PBF vs IRLB8748PBF 比較
詳細な並列比較: IRF5305PBF メーカー: Infineon および IRLB8748PBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF5305PBF | IRLB8748PBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.51 | $0.68 |
| FET Type | P-Channel | — |
| Drain-to-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -31 A | 92 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissition (PD) at TC=25C | 110 W | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | 60 mOhm (typical) | — |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | [DATA_NEEDED: max RDS(on) at -10V] | — |
| Total Gate Charge (Qg) | 42 nC (typical) | 15 nC typical |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Turn-On Delay Time (td(on)) | [DATA_NEEDED: td(on)] | — |
| Turn-Off Delay Time (td(off)) | [DATA_NEEDED: td(off)] | — |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Thermal Resistance, Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | — |
| 動作接合温度 | -55C to +175C | — |
| パッケージ | TO-220AB (through-hole, 3-pin + tab) | — |
| 実装タイプ | Through Hole | Through Hole |
| Lead-Free Plating (PBF suffix) | Yes (Pb-free) | — |
| RoHS ステータス | Compliant | Compliant (Pb-free PBF suffix) |
| Technology | HEXFET (planar DMOS) | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| On-Resistance RDS(on) max at VGS=10V | — | 4.8 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TC=25C | — | 75 W |
| 動作温度範囲 | — | -55C to +175C (junction) |
| Package Type | — | TO-220AB through-hole |
| Technology Family | — | StrongIRFET / HEXFET |
| Channel Type | — | N-Channel |
| Logic-Level Gate Drive | — | Yes (optimized for 5V VGS) |
| Qualification Standard | — | JEDEC (Industrial market per datasheet) |