IRF7341GTRPBF vs IRF7319TRPBF 比較
詳細な並列比較: IRF7341GTRPBF メーカー: Infineon および IRF7319TRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF7341GTRPBF | IRF7319TRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.76 | $0.62 |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 5.1 A | — |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | — |
| Power Dissipation (PD) | 2.4 W | — |
| Maximum Junction Temperature | 175 C | — |
| Configuration | Dual N-Channel | N-Channel + P-Channel (complementary half-bridge) |
| Technology | IR HEXFET Planar MOSFET | IR MOSFET / Fifth Generation HEXFET |
| パッケージ | 8-SO (SOIC-8) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| 動作温度範囲 | -55 C to +175 C | -55C to +150C (junction) |
| RoHS ステータス | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Type | — | Dual MOSFET Array (N-channel + P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current N-channel (ID) | — | 6.5 A |
| Continuous Drain Current P-channel (ID) | — | 4.9 A |
| RDS(on) Max N-channel | — | 29 mOhm (per Infineon product page) |
| RDS(on) Max P-channel | — | [DATA_NEEDED: P-channel RDS(on) max] |
| Total Power Dissipation (PD) | — | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | — | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | — | 110 C/W (steady state) |
| Package Type | — | 8-SOIC (SO-8) |
| Lead-Free / RoHS | — | Yes (PBF suffix = Pb-free) |
| Packaging | — | Tape & Reel (TR suffix) |