IRLL2705TRPBF vs IRF8714TRPBF 比較
詳細な並列比較: IRLL2705TRPBF メーカー: Infineon および IRF8714TRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRLL2705TRPBF | IRF8714TRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.22 | $0.66 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Technology | HEXFET (IR MOSFET fifth generation) | HEXFET / StrongIRFET (planar MOSFET) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at 25 deg C | 3.8 A | — |
| Peak Drain Current (IDM, pulsed) | 5.2 A | — |
| RDS(on) max at VGS=10V | 40 mOhm | — |
| Total Gate Charge (Qg) | 32 nC | — |
| Gate Drive Level | Logic-Level | — |
| Power Dissipation at TA=25 deg C | 1 W (Ta), 2.1 W (per LCSC listing) | — |
| 動作温度範囲 | -55 deg C to +175 deg C | -55C to +150C (junction) |
| 実装タイプ | Surface Mount | Surface Mount |
| パッケージ | SOT-223 | SO-8 (8-SOIC) |
| Dynamic dv/dt Rating | Yes | — |
| Lead-Free | Yes (PBF suffix) | — |
| RoHS ステータス | Compliant | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 14 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) max at VGS=10V | — | 8.7 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical range] |
| Gate Charge (Qg) typical | — | 8.1 nC |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| ピン数 | — | 8 |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Lead-Free / RoHS Compliant |
| MSLレベル | — | 1 (per Infineon package qualification) |