IRLML6246TRPBF vs BSS214NH6327XTSA1 比較
詳細な並列比較: IRLML6246TRPBF メーカー: Infineon および BSS214NH6327XTSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRLML6246TRPBF | BSS214NH6327XTSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.11 | $0.09 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLML6246TRPBF | — |
| Technology | IR MOSFET (HEXFET Power MOSFET) | OptiMOS 2 (planar N-channel) |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| Continuous Drain Current (ID) at Ta=25C | 4.1 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | 46 mOhm | — |
| On-Resistance RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | — |
| Gate Threshold Voltage VGS(th) typ | 1.1 V (logic-level) | — |
| Gate Charge Qg typ | [DATA_NEEDED: Qg total gate charge] | — |
| Power Dissipation (Ta=25C) | 1.3 W | — |
| 動作温度範囲 | -55C to +150C (junction) | -55C to +150C (junction) |
| パッケージ | SOT-23 (Micro3) | SOT-23 (PG-SOT23), 3 pins |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS Compliance | Yes (Pb-free) | — |
| ハロゲンフリー | Yes | — |
| MSLレベル | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) | — | 20 V |
| Continuous Drain Current (ID) | — | 1.5 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Drain-Source On-Resistance (RDS(on) max) | — | 250 mOhm at VGS = 4.5 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-Source Voltage (VGS max) | — | ±12 V (recommended) |
| Qualification | — | AEC-Q101 (Automotive) |
| Lead Finish | — | Pb-free lead plating (matte tin) |
| RoHS ステータス | — | Compliant |
| ESD Protection | — | Yes (gate ESD diode) |