ISC015N04NM5ATMA1 vs IAUC41N06S5L100ATMA1 比較
詳細な並列比較: ISC015N04NM5ATMA1 メーカー: Infineon および IAUC41N06S5L100ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | ISC015N04NM5ATMA1 | IAUC41N06S5L100ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.98 | $0.43 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 40V Normal Level | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 5 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) | [DATA_NEEDED: VGS(th) typical] |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A | — |
| Continuous Drain Current (ID) at Ta=25C | 33 A | — |
| Continuous Drain Current (ID) at Tc=25C | 206 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 115 W | — |
| 動作温度範囲 | -55 C to +175 C (junction, per OptiMOS 5) | -55C to +175C |
| パッケージ / ケース | PG-TDSON-8 FL (SuperSO8 5x6 mm) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 8 | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 (per Infineon SuperSO8 family) | [DATA_NEEDED: MSL rating] |
| Drive Level | Normal Level (VGS(th) ~3.4 V) | — |
| Continuous Drain Current (ID, Tj) | — | 41 A |
| Power Dissipation (PD, TC) | — | 42 W |
| On-State Resistance (RDS(on)) max | — | 10 mOhm at VGS=10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| パッケージ | — | PG-TDSON-8-33 (TDSON-8, 5x6 mm) |
| Channel Type | — | N-Channel |
| Automotive Qualified | — | Yes (AEC-Q101 automotive grade) |
| Interconnect | — | Copper clip (low-inductance) |