ISC088N08NM6ATMA1 vs BSC019N08NS5ATMA1 比較
詳細な並列比較: ISC088N08NM6ATMA1 メーカー: Infineon および BSC019N08NS5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | ISC088N08NM6ATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25 C | 12.1 A | — |
| Continuous Drain Current (ID) at Tc=25 C | 59 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| On-Resistance RDS(on) max at VGS=10 V | 8.8 mOhm | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Ta=25 C | 3 W | — |
| Power Dissipation (PD) at Tc=25 C | 71 W | — |
| 動作接合温度 | -55 C to +175 C | — |
| パッケージ | PG-TDSON-8 FL | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | [DATA_NEEDED: MSL level] | 1 |
| RoHS ステータス | Compliant (per distributor listings) | Compliant |
| Technology | Trench-gate OptiMOS 6 | OptiMOS 5 (N-channel trench) |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) at TA=25C | — | 28 A |
| Continuous Drain Current (ID) at TC=25C | — | 237 A |
| On-Resistance RDS(on) max at VGS=10V | — | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.0 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 214 W |
| 動作温度範囲 | — | -55 C to +150 C |
| Avalanche Rated | — | Yes |